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Nuclear Science, IEEE Transactions on

Issue 6 • Date Dec. 1979

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Displaying Results 1 - 25 of 92
  • [Front cover]

    Page(s): c1
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    Freely Available from IEEE
  • IEEE Transactions on Nuclear Science

    Page(s): c2
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    Freely Available from IEEE
  • Table of contents

    Page(s): 4709 - 4711
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    Freely Available from IEEE
  • Photo Highlights of the 1979 Nuclear and Space Radiation Effects Conference

    Page(s): 4712 - 4713
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    Freely Available from IEEE
  • Summary of 1979 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Page(s): 4714
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    Freely Available from IEEE
  • Editorial Comments

    Page(s): 4715
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  • IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee

    Page(s): 4715
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  • Conference Committee

    Page(s): 4716 - 4717
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  • Reviewers for this issue

    Page(s): 4717
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  • Outstanding Paper Award 1979 IEEE Conference on Nuclear and Space Radiation Effects

    Page(s): 4718
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  • The Current Limiting Capability of Diffused Resistors

    Page(s): 4719 - 4724
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    An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6×1012 rads(Si)/ sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits. View full abstract»

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  • Conductivity Modulation Effects in Diffused Resistors at Very High Dose Rate Levels

    Page(s): 4725 - 4729
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    Integrated circuits are susceptible to burnout at extremely high dose rate levels. Several IC technologies utilize diffused resistors which are subject to conductivity modulation. These resistors, in some cases, may not provide sufficient current limiting at high dose rate levels to preclude burnout. One solution to this problem is to utilize thin film or thick film resistors, eg, Nichrome, to provide current limiting. Another solution is to use diffused resistors in dielectrically isolated tubs. To facilitate this solution, engineering expressions which accurately define conductivity modulation must be developed, and the current limiting which results must be adequately estimated. The problem has been previously addressed (ref 1); this paper extends the treatment by considering band-to-band recombination which is the most important basic effect limiting conductivity modulation at high dose rate levels. View full abstract»

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  • A Radiation-Hardened I2L 8 × 8 Multiplier Circuit

    Page(s): 4730 - 4734
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    Development of improved Substrate Fed I2L (SFL) processing has been combined with geometry and fanout constraints to design a radiation hardened LSI 8 × 8 Multiplier. This paper will describe details of the process and circuit design and give resultant electrical and radiation test performance. View full abstract»

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  • Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor

    Page(s): 4735 - 4739
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    Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1×109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed. View full abstract»

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  • Recently Demonstrated Radiation Immunity of Symmetrical Cell I2L

    Page(s): 4740 - 4743
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    A significant degree of radiation hardness has been achieved for I2L devices using symmetrical cell topologies. MSI complexity functions have been implemented with no degradation in device hardness from individual gate performance. Short pulse upset thresholds of 2×1010 Rad (Si)/sec and 1x1014 neutrons/cm2 fluence immunity have been demonstrated. View full abstract»

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  • Transient Response of GaAs IC's to Ionizing Radiation

    Page(s): 4744 - 4749
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    Transient responses of GaAs E-JFET planar integrated circuits caused by a 25 ns wide ionizing radiation pulse from a LINAC were measured. Present technology circuits with 2.5 ¿m channel length devices have a measured logic upset level of about 1 × 1010 rad(GaAs)/s and a survival dose rate of approximately 1 × 1011 rad(GaAs)/s. A theoretical analysis for logic upset dose rate and a correlation of experimental results with theory is presented. For E-JFET devices with a channel length of 1 ¿m, a logic upset dose rate of 1 × 1011 rad(GaAs)/s is predicted. View full abstract»

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  • Modeling Rapid Annealing in Digital Integrated Circuits

    Page(s): 4750 - 4757
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    An analytical model for the effects of rapid annealing in narrow base bipolar transistors has been developed. This model utilizes transistor base-emitter voltage and an empirical curve to calculate annealing factor with time. The model has been incorporated into the TRAC circuit analysis code and used to predict the time-dependent response of a low-power Schottky TTL NAND gate and a four-bit shift register as a function of neutron fluence and operating condition. View full abstract»

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  • Combined Neutron and Thermal Effects on Bipolar Transistor Gain

    Page(s): 4758 - 4762
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    An approximate model has been developed to extend room temperature neutron transistor gain characterizations to temperature extremes. The model can extrapolate transistor gain specifications without recharacterizing device types for temperature or neutron effects. The simplified model can be inaccurate at low currents and for those transistors where the surface effects are significant. However, the model shows good agreement with experiment over two orders of magnitude in operating current level and can be used as a valuable design/analysis tool. Comparison of neutron degradation data (at room temperature) with the prediction based on transistor gain bandwidth product (fT) can be used to estimate the significance of surface effects. View full abstract»

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  • Modeling and Test Verification for Hardened Integrated Circuits

    Page(s): 4763 - 4768
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    Hardened dielectrically isolated integrated circuits are being developed to provide an order of magnitude improvement in radiation response over previous bipolar technology. This paper describes (a) the analytical and experimental techniques used to develop the hardened parts, and (b) comparative analytical and test results obtained thus far in the program. The paper describes how (a) various "element" models were defined for CAD usage, (b) how design tolerances were established for the element models, (c) how circuit design margins were established, (d) experimental techniques and equipment used to validate early designs, and (e) comparative analytical and test results. View full abstract»

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  • A Total Dose Homogeneity Study of the 108a Operational Amplifier

    Page(s): 4769 - 4774
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    This study investigated the homogeneity of total dose degradation of 108A-type operational amplifiers at various traceability levels. Hardness variability was compared at the diffusion lot, wafer and sub-wafer levels for breakout transistors as well as complete circuits, and provides a basis for selecting sampling and control procedures for hardness assurance. The study also showed that lower specification devices from the same wafer or diffusion lot could be used as radiation test samples to determine the hardness of the low yield 108A devices. View full abstract»

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  • An Experimental Study of Transient Annealing in I2L Devices Following Pulsed Neutron Irradiation

    Page(s): 4775 - 4777
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    A series of experiments have been performed to determine the annealing factor for I2L devices at 23°C. The devices used in these experiments were obtained from Texas Inst. Inc., and are representative of their "Second-Generation-Oxide-Separated" I2L technology. The devices were irradiated using the SPR reactors at Sandia Laboratories. The annealing factor was obtained through the use of several electrical parameters and the value obtained was greater than 1.7 at a time of 50¿s after the peak of the neutron irradiation pulse and decayed down to a value of 1.1 at a time of 1s after the peak of the pulse. View full abstract»

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  • Upset Testing of LSI Devices

    Page(s): 4778 - 4781
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    A program is outlined to determine the lowest radiation upset levels or digital LSI devices. Upset levels can be sensitive to input conditions and an efficient strategy of testing is described, together with powerful instrumentation which meets the above objective. Some upsets can be internal to the device and found only by clocking through to an output. This instrumentation determines if upsets exist by comparison of outputs of device(s) under test with outputs of an unexposed (reference) device. View full abstract»

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  • Radiation Damage Coefficients for Silicon Depletion Regions

    Page(s): 4783 - 4791
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    An experimental and analytical study of radiation effects on silicon depletion regions has been performed. Data are presented which yield damage coefficients appropriate for describing the effects of fission neutrons and Co60 gamma rays on depleted regions and on the SiO2-Si interface. A model incorporating these coefficients is described and used to perform calculations of radiation-induced increases in dark (or leakage) current in CCDs, diodes, and JFETs. The model calculations performed involve no adjustable parameters. Agreement between calculations and experimental results is within a factor of < 2 in most cases. Model calculations for these devices are based on the assumption that dark current is primarily attributable to carriers thermally generated at centers in the depletion region bulk. Results of short-term annnealing measurements on CCDs are presented which provide information regarding damage in depletion regions at early times following pulsed neutron bombardment. Evidence of the production of interface states in an MOS device by neutron bombardment is also presented. View full abstract»

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  • Effects of Simulated Nuclear Thermal Pulses on Fiber Optic Cables

    Page(s): 4792 - 4795
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    The effects of pulsed thermal radiation on fiber optic cables with a variety of jackets (polyurethane, PVC, fluorocarbon) are presented. Exposure between 27 and 85 cal/cm2 did not sever the optical fibers, but the radiation did cause disintegration of the jackets and the Kevlar strength members, which resulted in a significant reduction of the cable's ability to survive mechanical stress. Hardening techniques are discussed. The addition of low absorptance materials (white Teflon tape and aluminum foil) under clear or white Teflon jackets prevented some types of cables from being affected at fluences up to 110 cal/cm2. View full abstract»

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  • Radiation Response of Large Core Polymer Clad Silica Optical Fibers

    Page(s): 4796 - 4801
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    The radiation-induced optical losses in a selected group of large diameter polymer-clad silica (PCS) optical fibers has been measured in both steady state and pulsed radiation environments. Fibers typically were fabricated from radiation resistant synthetic silicas and silicone polymer materials. Measurements were made in situ at room temperature for operational wavelengths of 0.82¿m and 0.92¿m. Both growth and decay characteristics of the optical degradation were investigated. As a class, these fibers represent the most radiation resistant optical waveguides measured to date in the laboratory. Radiation-induced optical losses were in general lower at the longer wavelength but the response of all fibers was extremely nonlinear and complex with an important parameter being previous radiation history. For applications that do not require extremely low loss or ultra-high bandwidth but which demand radiation hardness, these large core PCS fibers must be considered as the most attractive candidates available to the systems' designer. View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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