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IEEE Transactions on Nuclear Science

Issue 6 • Date Dec. 1979

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Displaying Results 1 - 25 of 92
  • [Front cover]

    Publication Year: 1979, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1979, Page(s): c2
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  • Table of contents

    Publication Year: 1979, Page(s):4709 - 4711
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  • Photo Highlights of the 1979 Nuclear and Space Radiation Effects Conference

    Publication Year: 1979, Page(s):4712 - 4713
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  • Summary of 1979 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1979, Page(s): 4714
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  • Editorial Comments

    Publication Year: 1979, Page(s): 4715
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  • IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee

    Publication Year: 1979, Page(s): 4715
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  • Conference Committee

    Publication Year: 1979, Page(s):4716 - 4717
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  • Reviewers for this issue

    Publication Year: 1979, Page(s): 4717
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  • Outstanding Paper Award 1979 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1979, Page(s): 4718
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  • The Current Limiting Capability of Diffused Resistors

    Publication Year: 1979, Page(s):4719 - 4724
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (721 KB)

    An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6×1012 rads(Si)/ sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geo... View full abstract»

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  • Conductivity Modulation Effects in Diffused Resistors at Very High Dose Rate Levels

    Publication Year: 1979, Page(s):4725 - 4729
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (723 KB)

    Integrated circuits are susceptible to burnout at extremely high dose rate levels. Several IC technologies utilize diffused resistors which are subject to conductivity modulation. These resistors, in some cases, may not provide sufficient current limiting at high dose rate levels to preclude burnout. One solution to this problem is to utilize thin film or thick film resistors, eg, Nichrome, to pro... View full abstract»

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  • A Radiation-Hardened I2L 8 × 8 Multiplier Circuit

    Publication Year: 1979, Page(s):4730 - 4734
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1344 KB)

    Development of improved Substrate Fed I2L (SFL) processing has been combined with geometry and fanout constraints to design a radiation hardened LSI 8 × 8 Multiplier. This paper will describe details of the process and circuit design and give resultant electrical and radiation test performance. View full abstract»

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  • Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor

    Publication Year: 1979, Page(s):4735 - 4739
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (815 KB)

    Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of le... View full abstract»

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  • Recently Demonstrated Radiation Immunity of Symmetrical Cell I2L

    Publication Year: 1979, Page(s):4740 - 4743
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1358 KB)

    A significant degree of radiation hardness has been achieved for I2L devices using symmetrical cell topologies. MSI complexity functions have been implemented with no degradation in device hardness from individual gate performance. Short pulse upset thresholds of 2×1010 Rad (Si)/sec and 1x1014 neutrons/cm2 fluence immunity have been demonstrated. View full abstract»

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  • Transient Response of GaAs IC's to Ionizing Radiation

    Publication Year: 1979, Page(s):4744 - 4749
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1889 KB)

    Transient responses of GaAs E-JFET planar integrated circuits caused by a 25 ns wide ionizing radiation pulse from a LINAC were measured. Present technology circuits with 2.5 ¿m channel length devices have a measured logic upset level of about 1 × 1010 rad(GaAs)/s and a survival dose rate of approximately 1 × 1011 rad(GaAs)/s. A theoretical analysis for logic upset dose rate and a correlation o... View full abstract»

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  • Modeling Rapid Annealing in Digital Integrated Circuits

    Publication Year: 1979, Page(s):4750 - 4757
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1572 KB)

    An analytical model for the effects of rapid annealing in narrow base bipolar transistors has been developed. This model utilizes transistor base-emitter voltage and an empirical curve to calculate annealing factor with time. The model has been incorporated into the TRAC circuit analysis code and used to predict the time-dependent response of a low-power Schottky TTL NAND gate and a four-bit shift... View full abstract»

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  • Combined Neutron and Thermal Effects on Bipolar Transistor Gain

    Publication Year: 1979, Page(s):4758 - 4762
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (763 KB)

    An approximate model has been developed to extend room temperature neutron transistor gain characterizations to temperature extremes. The model can extrapolate transistor gain specifications without recharacterizing device types for temperature or neutron effects. The simplified model can be inaccurate at low currents and for those transistors where the surface effects are significant. However, th... View full abstract»

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  • Modeling and Test Verification for Hardened Integrated Circuits

    Publication Year: 1979, Page(s):4763 - 4768
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1199 KB)

    Hardened dielectrically isolated integrated circuits are being developed to provide an order of magnitude improvement in radiation response over previous bipolar technology. This paper describes (a) the analytical and experimental techniques used to develop the hardened parts, and (b) comparative analytical and test results obtained thus far in the program. The paper describes how (a) various "ele... View full abstract»

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  • A Total Dose Homogeneity Study of the 108a Operational Amplifier

    Publication Year: 1979, Page(s):4769 - 4774
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1123 KB)

    This study investigated the homogeneity of total dose degradation of 108A-type operational amplifiers at various traceability levels. Hardness variability was compared at the diffusion lot, wafer and sub-wafer levels for breakout transistors as well as complete circuits, and provides a basis for selecting sampling and control procedures for hardness assurance. The study also showed that lower spec... View full abstract»

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  • An Experimental Study of Transient Annealing in I2L Devices Following Pulsed Neutron Irradiation

    Publication Year: 1979, Page(s):4775 - 4777
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (471 KB)

    A series of experiments have been performed to determine the annealing factor for I2L devices at 23°C. The devices used in these experiments were obtained from Texas Inst. Inc., and are representative of their "Second-Generation-Oxide-Separated" I2L technology. The devices were irradiated using the SPR reactors at Sandia Laboratories. The annealing factor was obtained through the use of several e... View full abstract»

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  • Upset Testing of LSI Devices

    Publication Year: 1979, Page(s):4778 - 4781
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (700 KB)

    A program is outlined to determine the lowest radiation upset levels or digital LSI devices. Upset levels can be sensitive to input conditions and an efficient strategy of testing is described, together with powerful instrumentation which meets the above objective. Some upsets can be internal to the device and found only by clocking through to an output. This instrumentation determines if upsets e... View full abstract»

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  • Radiation Damage Coefficients for Silicon Depletion Regions

    Publication Year: 1979, Page(s):4783 - 4791
    Cited by:  Papers (25)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1914 KB)

    An experimental and analytical study of radiation effects on silicon depletion regions has been performed. Data are presented which yield damage coefficients appropriate for describing the effects of fission neutrons and Co60 gamma rays on depleted regions and on the SiO2-Si interface. A model incorporating these coefficients is described and used to perform calculations of radiation-induced incre... View full abstract»

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  • Effects of Simulated Nuclear Thermal Pulses on Fiber Optic Cables

    Publication Year: 1979, Page(s):4792 - 4795
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1264 KB)

    The effects of pulsed thermal radiation on fiber optic cables with a variety of jackets (polyurethane, PVC, fluorocarbon) are presented. Exposure between 27 and 85 cal/cm2 did not sever the optical fibers, but the radiation did cause disintegration of the jackets and the Kevlar strength members, which resulted in a significant reduction of the cable's ability to survive mechanical stress. Hardenin... View full abstract»

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  • Radiation Response of Large Core Polymer Clad Silica Optical Fibers

    Publication Year: 1979, Page(s):4796 - 4801
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1407 KB)

    The radiation-induced optical losses in a selected group of large diameter polymer-clad silica (PCS) optical fibers has been measured in both steady state and pulsed radiation environments. Fibers typically were fabricated from radiation resistant synthetic silicas and silicone polymer materials. Measurements were made in situ at room temperature for operational wavelengths of 0.82¿m and 0.92¿m.... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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Editor-in-Chief
Paul Dressendorfer
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