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IEEE Transactions on Nuclear Science

Issue 6 • Dec. 1978

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Displaying Results 1 - 25 of 99
  • [Front cover]

    Publication Year: 1978, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1978, Page(s): c2
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  • Contents

    Publication Year: 1978, Page(s):1149 - 1152
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  • Photo Highlights of the 1978 N&SRE Conference

    Publication Year: 1978, Page(s):1153 - 1154
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  • 1978 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1978, Page(s): 1155
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  • The Nucleus

    Publication Year: 1978, Page(s): 1156
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  • IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee

    Publication Year: 1978, Page(s): 1157
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  • Reviewers for this issue

    Publication Year: 1978, Page(s): 1158
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  • Outstanding Paper Award 1978 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1978, Page(s): 1159
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  • Rapid Anneal of Radiation-Induced Silicon-Sapphire Interface Charge Trapping

    Publication Year: 1978, Page(s):1160 - 1165
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1447 KB)

    The rapid ahneal phenomenon of the radiation induced charge trapping at the silicon sapphire interface was experimentally investigated using a junction FET structure from 10 μsec through 1 second after an ionizing radiation pulse for various fabrication parameters and bias conditions. The fabrication parameters investigated include type of starting sapphire (Czochralski, ribbon, and gradie... View full abstract»

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  • Cosmic Ray Induced in MOS Memory Cells

    Publication Year: 1978, Page(s):1166 - 1171
    Cited by:  Papers (87)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1433 KB)

    A model for estimating the cosmic ray induced bit error rate in dynamic MOS RAMs is developed and used to calculate the bit error rate in NMDS dynamic RAMs used in an operating satellite system. The calculated error rate agrees sufficiently well with the observed error rate to conclude that cosmic ray ionization is a likely cause of observed satellite bit errors. The susceptibility of M1S RAMs to ... View full abstract»

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  • Dose Rate and Extended Total Dose Characterization of Radiation Hardened Metal Gate CMOS Integrated Circuits

    Publication Year: 1978, Page(s):1172 - 1175
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (564 KB)

    First Page of the Article
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  • Ionizing Radiation Effects on the Sperry Rand Nonvolatile 256-Bit MNOS Ram Array (SR2256)

    Publication Year: 1978, Page(s):1176 - 1180
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2877 KB)

    Ionizing dose-rate and total dose tests have been performed on the Sperry Rand 256-MNOS (SR 2256) RAM array. Results from these tests have shown that the devices can survive dose-rate levels as high as 1.0 × 1012 Rad(Si)/sec (in a 2 MeV electron-beam environment) with no loss of memory data or permanent degradation in device operation. However, under certain test conditions, the "Read" and "Write... View full abstract»

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  • Ultra-High Upset, Megarad-Hard Si-Gate CMOS/SOS Code Generator

    Publication Year: 1978, Page(s):1181 - 1186
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2797 KB)

    A high-speed, radiation-hard code generator LSI array has been developed and fabricated. A unique design approach combined with hard silicon-gate CMOS/ SOS processing has resulted in an ultra-high transientupset threshold (~1011 rads/s for 50 ns pulse width) and megarad total-dose hardness. This paper describes the design as well as characterizes the electrical, radiation and temperature capabilit... View full abstract»

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  • Radiation Hardened CMOS/SOS Memory Circuits

    Publication Year: 1978, Page(s):1187 - 1195
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2584 KB)

    Large-scale-integrated circuits which combine radiation hardness with density, high speed and low power dissipation require both hardened processes and hardened circuit design methods. CMOS/SOS circuits featuring self-compensation, self-biasing and parameter tracking accommodate a wide range of nonuniform on-chip parameter variations. These variations result from exposure to a nuclear radiation ev... View full abstract»

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  • A Survey of Radiation Hardened Microelectronic Memory Technology

    Publication Year: 1978, Page(s):1196 - 1204
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1984 KB)

    A study was performed to identify needed research and development in radiation hardened microelectronic memory technology. A review was made of the requirements for memories, the state-of-the-art of mature memory technologies, the trends in the development of unhardened commercial memory technologies, and the current technology gaps facing memory technologies and their prospects for solution. The ... View full abstract»

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  • A Technique to Measure Short-Term Annealing in MOS Microprocessors

    Publication Year: 1978, Page(s):1205 - 1208
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1652 KB)

    A technique has been developed for the evaluation of the operation of microprocessors (MPU's) at early times and as a function of time after exposure to a radiation pulse. This technique, which was applied to some representative units--The Motorola MC6800L, the Intel C8080A and the Intel D8080A--uses a comparison method to determine functionality of the MPU under test. Following irradiation, a tes... View full abstract»

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  • "In Situ" Radiation Tolerance Tests of MOS RAMs

    Publication Year: 1978, Page(s):1209 - 1215
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2356 KB)

    To design the 4Mbit Scientific Data Store for the Faint Object Camera of the NASA/ESA space telescope, MOS RAM radiation hardness has been tested extensively. The radiation tolerance of 36 MOS RAM types has been evaluated by "in situ" testing. For comparison, one I2L type was added. The principal aim was the evaluation of failure doses. Beyond that, the impact of technology, storage mechanism, int... View full abstract»

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  • A Simple Model for Predicting Radiation Effects in MOS Devices

    Publication Year: 1978, Page(s):1216 - 1225
    Cited by:  Papers (44)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2107 KB)

    A mathematical model for the electrical consequence of charge buildup in metal-oxide-semiconductor devices has been investigated and found to be useful. It can be used (a) for comparing experimental data from different sources and (b) for making predictions of the lifetime of MOS circuits exposed to radiation in space or laboratory environments. A wide range of experimental data has been collected... View full abstract»

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  • Response of MNOS Capacitors to Ionizing Radiation at 80°k

    Publication Year: 1978, Page(s):1226 - 1232
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1517 KB)

    MNOS capacitors with oxide thicknesses 85Å-600Å and silicon nitride thicknesses 200-2000Å have been irradiated with 2 MeV electrons at 80°K. Measured flatband shifts are found to depend on both polarity and magnitude of the applied field, oxide thickness, nitride thickness, and variations in device processing. For negative gate bias and effective applied fields 1-2x106 V/Cm, &#... View full abstract»

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  • Trapping Effects in Irradiated and Avalanche-Injected MOS Capacitors

    Publication Year: 1978, Page(s):1233 - 1238
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1182 KB)

    Avalanche-injection of holes and electrons into nonirradiated and irradiated MOS capacitors, respectively, were used to study hole traps in the SiO2. The trapping parameters for holes, and for electrons in the presence of trapped holes, were obtained in the range 10-14 - 10-13 cm2 for oxide thicknesses in the range 200 - 1000Å. A dominant bulk specie is determined to tail off from the Si/SiO2 int... View full abstract»

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  • Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors

    Publication Year: 1978, Page(s):1239 - 1245
    Cited by:  Papers (41)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1227 KB)

    The short-term recovery of hardened pyrogenic SiO2 MOS capacitors exposed to pulsed electron-beam irradiation was studied as a function of oxide thickness between 200 and 1000 Å. Two sets of samples were studied: one set grown to a single thickness and then etched back to various thicknesses, and the other set grown for different lengths of time to varying thicknesses. In both cases, the recovery... View full abstract»

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  • Shubnikov-De Haas Oscillations Caused by a Two-Dimensional Leakage Channel on Silicon Mosfets Induced by Electron Irradiation

    Publication Year: 1978, Page(s):1246 - 1250
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (958 KB)

    A possible failure mechanism of n-channel MOSFETs exposed to ionizing radiation are leakage currents between source and drain. This leakage begins to occur at relatively low radiation doses, and can seriously degrade the performance of an otherwise hardened CMOS device. In the present paper, we demonstrate by the observation of quantum oscillations in the magnetoresistance that by room temperature... View full abstract»

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  • Neutron Damage Mechanisms in Charge Transfer Devices

    Publication Year: 1978, Page(s):1251 - 1260
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1833 KB)

    A study of neutron damage mechanisms in charge transfer devices has been performed with emphasis placed on investigation of dark current increases. MOS capacitors were used to determine damage coefficients that are applicable to the radiation response of CCDs. Measurements of dark current density in CCDs were made following neutron bombardment. A unique value for generation-lifetime damage coeffic... View full abstract»

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  • Radiation response of fiber optic waveguides in the 0.4 to 1.7 μ region

    Publication Year: 1978, Page(s):1261 - 1266
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1197 KB)

    The response of fiber optic waveguides to ionizing radiation has been studied. Measurements of the growth and decay of the radiation-induced loss at 0.82μ have revealed that fibers with low OH are more susceptible to damage than those with high OH. The addition of P to Ge-doped silica core fibers has been found to suppress an intense transient absorption. Spectral measurements of the radia... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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