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Nuclear Science, IEEE Transactions on

Issue 6 • Date Dec. 1975

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Displaying Results 1 - 25 of 114
  • [Front cover]

    Publication Year: 1975 , Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1975 , Page(s): c2 - 2129
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  • Contents

    Publication Year: 1975 , Page(s): 2131 - 2135
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  • Scenes from the 1975 Conference

    Publication Year: 1975 , Page(s): 2136 - 2137
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  • Summary of 1975 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1975 , Page(s): 2138
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  • The Nucleus

    Publication Year: 1975 , Page(s): 2139
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  • IEEE Nuclear and Plasma Sciences Society Radiation Effects Committee

    Publication Year: 1975 , Page(s): 2140
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  • Reviewers for this issue

    Publication Year: 1975 , Page(s): 2141
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  • Outstanding Paper Award - 1975 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1975 , Page(s): 2142 - 2143
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  • Mechanisms of Charge Buildup in MOS Insulators

    Publication Year: 1975 , Page(s): 2144 - 2150
    Cited by:  Papers (6)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1937 KB)  

    The radiation sensitivity of MOS devices has been recognized to be the result of a charge buildup caused by the sweepout of electrons and the trapping of holes following hole-electron pair production by ionizing radiation. Holes have been shown to have a finite, although small, mobility in thermally grown SiO2. Trapping of holes takes place near the Si-SiO2 interface, possibly by oxygen vacancies ... View full abstract»

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  • Process Optimization of Radiation-Hardened CMOS Integrated Circuits

    Publication Year: 1975 , Page(s): 2151 - 2156
    Cited by:  Papers (114)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (2231 KB)  

    The effects of processing steps on the radiation hardness of MOS devices have been systematically investigated. Quantitative relationships between the radiation-induced voltage shifts and processing parameters have been determined, where possible. Using the results of process optimization, a controlled baseline fabrication process for aluminum-gate CMOS has been defined. CMOS inverters which can s... View full abstract»

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  • Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient Annealing

    Publication Year: 1975 , Page(s): 2157 - 2162
    Cited by:  Papers (32)
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    Irradiation studies at 76°K are described which demonstrate that radiation-produced holes in SiO2 are immobile at this temperature. If an electric field of either polarity is present in the SiO2 during 76°K irradiation, to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. This predicts ¿VT ¿ dox2 , ... View full abstract»

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  • Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors

    Publication Year: 1975 , Page(s): 2163 - 2167
    Cited by:  Papers (44)
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    The transient response of SiO2 gate-insulator MOS capacitors to pulsed electron beam irradiation was studied. The radiation-induced flatband voltage shift (¿VFB) in SiO2 MOS capacitors was measured with a fast C-V technique from 70 ¿sec to 1000 sec after a 60 krad radiation pulse for temperatures from 80 to 293 K. In complementary experiments, the post-irradiation charge displacement in the MOS ... View full abstract»

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  • The Effect of Ion Implantation on Oxide Charge Storage in MOS Devices

    Publication Year: 1975 , Page(s): 2168 - 2173
    Cited by:  Papers (2)  |  Patents (4)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1058 KB)  

    Measurements are reported in which the charge stored in the oxide of an MOS device exposed to ionizing radiation is studied as a function of oxide pretreatment. Implantation with Al+ ions is found to introduce electron traps into the oxide and the stability of these traps is examined in thermal annealing experiments. The predictions of a simple model, in which the implantation associated displacem... View full abstract»

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  • Physical Mechanisms of Radiation Hardening of MOS Devices by Ion Implantation

    Publication Year: 1975 , Page(s): 2174 - 2180
    Cited by:  Papers (4)  |  Patents (3)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1265 KB)  

    This paper reports experimental and analytical studies performed on Al+ ion-implanted MOS capacitors. Electrons and holes were excited in SiO2 by a low-energy electron beam, the resultant current measured, and the results then compared to findings for unimplanted specimens. Comparisons were also made of flatband voltage shifts for implanted and unimplanted devices. Analytical expressions, based on... View full abstract»

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  • Radiation Hardened CMOS/SOS

    Publication Year: 1975 , Page(s): 2181 - 2184
    Cited by:  Papers (10)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (686 KB)  

    This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g. < l¿A per mil of channel width) of post-radiation n-channel back leakage were obtained only with wet oxides. Threshold shifts o... View full abstract»

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  • Investigation of Radiation Effects and Hardening Procedures for CMOS/SOS

    Publication Year: 1975 , Page(s): 2185 - 2189
    Cited by:  Papers (17)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (933 KB)  

    Ionizing radiation effects and hardening procedures have been investigated using simple CMOS/SOS circuits fabricated with SiO2 gate insulators. A modified gate oxidation process using steam and HCl has resulted in improved gate oxide hardness -- with threshold voltage shifts of less than two volts up to a total dose of 106 rads(Si). Radiation-induced n-channel leakage currents were reduced by more... View full abstract»

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  • Radiation Hardening of MOS Integrated Circuits on <111> Silicon

    Publication Year: 1975 , Page(s): 2190 - 2192
    Cited by:  Papers (2)
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  • Radiation-Induced Surface States in MOS Devices

    Publication Year: 1975 , Page(s): 2193 - 2196
    Cited by:  Papers (3)
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  • Ionizing Radiation Effects in SOS Structures

    Publication Year: 1975 , Page(s): 2197 - 2202
    Cited by:  Papers (4)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1298 KB)  

    The total ionizing radiation effects of n-channel enhancement mode silicon on sapphire MISFET's have been characterized up to a total dose of 107 rads (Si). The drain current versus drain voltage characteristics of the n-channel devices showing the "kink" effect were measured over a range of gate voltages and as a function of ionizing radiation. The effect of the ionizing radiation on the "kink" p... View full abstract»

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  • Thin Film Silicon on Silicon Nitride for Radiation Hardened Dielectrically Isolated Misfet's

    Publication Year: 1975 , Page(s): 2203 - 2207
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1172 KB)  

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric has been determined for a total ionizing dose up to 107 rads (Si). Junction FET's, whose active channel region is directly adjacent to the siliconsilicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si3N4 isolation dielectric. The ... View full abstract»

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  • Design Optimization of Radiation-Hardened CMOS Integrated Circuits

    Publication Year: 1975 , Page(s): 2208 - 2213
    Cited by:  Papers (23)
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    Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickne... View full abstract»

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  • Dose-Rate Effects in the Permanent Threshold Voltage Shifts of MOS Transistors

    Publication Year: 1975 , Page(s): 2214 - 2218
    Cited by:  Papers (6)
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    Data has been collected that shows the permanent threshold voltage shift occurring in MOS transistors exposed to the same total dose of gamma radiation can be greater in a high dose-rate environment than in a low dose-rate environment. This dose-rate effect is ascribed to a "Photovoltaic" bias generation in the substrate of a device which results in an effective gate bias change (positive for P-ch... View full abstract»

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  • Radiation Effects Problems in Nuclear Fuel Rods

    Publication Year: 1975 , Page(s): 2219 - 2226
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    This paper will review some of the radiation effects problems that have been encountered in nuclear fuel rods. Examples are drawn from both the commercial Light Water Reactors (LWR) and the new, developing Liquid Metal Fast Breeder Reactors (LMFBR). The performance of a particular fuel rod is influenced by (1) the interaction between the ceramic fuel pellet column and the metal cladding tube, and ... View full abstract»

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  • Hole Transport in MOS Oxides

    Publication Year: 1975 , Page(s): 2227 - 2233
    Cited by:  Papers (32)
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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