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IEEE Transactions on Nuclear Science

Issue 6 • Dec. 1972

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Displaying Results 1 - 25 of 77
  • [Front cover]

    Publication Year: 1972, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1972, Page(s): c2
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  • Table of contents

    Publication Year: 1972, Page(s):1 - 5
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  • Conference

    Publication Year: 1972, Page(s): 6
    Cited by:  Papers (1)
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  • The Nucleus

    Publication Year: 1972, Page(s): 7
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  • Summary of 1972 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1972, Page(s): 8
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  • IEEE Nuclear Science Group Radiation Effects Committee

    Publication Year: 1972, Page(s): 9
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  • 1972 IEEE Conference Outstanding Paper Award

    Publication Year: 1972, Page(s): 10
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  • Effect of Ionizing Radiation on Gunn Diode Amplifiers

    Publication Year: 1972, Page(s):11 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1099 KB)

    X-band Gunn diode amplifiers have been tested while exposed to pulsed ionizing radiation. Peak photo currents induced vary as the .65 power of the dose rate, as had been found for oscillator diodes. The principal effect is a transient loss of gain, with the recovery time less than 400 ns for dose rates up to 5×1010 rad (Si)/s. The dependence of gain on dose rate agrees very well with a calculatio... View full abstract»

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  • X-Ray-Induced Photoconductivity in Dielectric Films

    Publication Year: 1972, Page(s):15 - 22
    Cited by:  Papers (45)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1495 KB)

    We have measured the conductivity induced in films of polyethylene, epoxy, polytetrafluoroethylene, polyethylene terephthalate, polyimide, and glass by x rays at dose rates between 109 and 1010 rad/sec (dose in air). The films were 0.05 to 1.25 mm thick. The x-ray spectrum peaked in the vicinity of 10 keV, and the x-ray pulse width was about 40 nsec FWHM. X-ray induced photocurrents were found to ... View full abstract»

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  • Rapid Annealing of Frequency Change in Crystal Resonators Following Pulsed X-Irradiation

    Publication Year: 1972, Page(s):23 - 32
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2945 KB)

    A transient negative frequency change in AT-cut 125 MHz 5th overtone quartz resonators has been observed following exposure to an intense burst of x-rays. All natural, Z-growth synthetic, and swept Z-growth synthetic resonators suffer a significant initial negative frequency offset. At room temperature, the transient frequency change in natural quartz anneals in approximately ten minutes to a rela... View full abstract»

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  • Electronic Transport in Insulating Films

    Publication Year: 1972, Page(s):33 - 40
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1390 KB)

    This paper gives a brief review of various electronic transport processes in insulating films. The topics include a brief consideration of energy bands and the concepts of extended and localized states; the properties of traps with emphasis on Shockley-Reed theory; the space-charge limitation of currents for one-carrier injection; the bulk trap limitation of currents including hopping conduction, ... View full abstract»

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  • EMP Response of a Cavity: Field Generation within a Lossy Dielectric Cylinder Excited by a Radiation Pulse

    Publication Year: 1972, Page(s):41 - 48
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (873 KB)

    A transient electromagnetic field problem is solved for a finite length cylindrical cavity bounded by perfectly conducting walls. The cavity is filled with a homogeneous lossy dielectric material. Analytic solutions for the relevant components of the electric and magnetic fields generated by an axially propagating current pulse are presented. Results obtained for various sample problems are discus... View full abstract»

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  • Dual-Grid Characteristic Method for the Numerical Integration of the Three-Wire Transmission Line Equations

    Publication Year: 1972, Page(s):49 - 56
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (813 KB)

    We have developed a method for the numerical solution of the system of hyperbolic equations that arise from the study of signal propagation on a three-wire transmission line. This method solves the characteristic form of the equations by using a distinct spatial grid for each traveling wave. The resulting computer code produces calculations that are virtually free of numerical dispersion. View full abstract»

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  • Non-Destructive Screening for Thermal Second Breakdown

    Publication Year: 1972, Page(s):57 - 67
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2059 KB)

    The feasibility of developing nondestructive screening techniques to determine the second breakdown vulnerability of semiconductor devices at submicrosecond pulse conditions has been demonstrated. In addition, it has been shownl that second breakdown can be nondestructively initiated under certain current limiting conditions without causing degradation in device operating characteristics or device... View full abstract»

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  • Semiconductor Device Degradation by High Amplitude Current Pulses

    Publication Year: 1972, Page(s):68 - 75
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1822 KB)

    This paper presents the results of a lengthy and comprehensive investigation of semiconductor device degradation from nanosecond current pulses. Topics discussed include (1) previously published literature on pulse degradation and second breakdown, (2) experimental results obtained in several studies, (3) pulse damage recovery using several annealing techniques, (4) a model of the pulse damage, (5... View full abstract»

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  • Adaptation of the P-N Junction Burnout Model to Circuit Analysis Codes

    Publication Year: 1972, Page(s):76 - 81
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1945 KB)

    Transient electrical pulses impressed upon a circuit containing semiconductors subject the semiconductors to a thermal transient. Potential burnout of the parts is of particular interest and concern. A model is presented which permits the calculation of the transient temperature throughout the semiconductor given the instantaneous power dissipation within the device. The basic technique is to math... View full abstract»

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  • Radiation Damage Effects in Microwave Dielctric Substrate Materials

    Publication Year: 1972, Page(s):82 - 85
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    Permanent radiation damage effects on the microwave properties of the alumina, sapphire, and teflon-glass substrate as employed in microstrip and stripline microwave circuits have been investigated by means of a simple bandpass resonator. No changes in the microwave properties of alumina and sapphire substrates were noted to 1.3 × 108 rads (H2O) and 2 × 1015 neutrons/cm2 (E > 10 KeV), although s... View full abstract»

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  • Terminal Modeling and Photocompensation of Complex Microcircuits

    Publication Year: 1972, Page(s):86 - 93
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1571 KB)

    Results are presented on generalized approaches to derive radiation-inclusive simplified models of linear and digital microcircuits. Application of the principle of superposition allows generation of a compact small-signal model of the linear microcircuit, with extension of the model to include large-signal saturation effects. The digital microcircuit model is the combination of current-voltage te... View full abstract»

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  • Modeling IC's in an Ionizing Radiation Environment with a Time Varying Wiener Model

    Publication Year: 1972, Page(s):94 - 95
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (267 KB)

    The Wiener theory of modeling nonlinear systems is generalized to include time varying systems. With radiation effects in integrated circuits being considered as internal time varying effects, this generalized technique can be used to model an integrated circuit in a radiation environment. View full abstract»

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  • Radiation Models for Digital Integrated Circuits

    Publication Year: 1972, Page(s):96 - 102
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1046 KB)

    The effort to be described had as its objective the development of new techniques to define simplified models of digital integrated circuits suitable for use with the SCEPTRE or similar computer programs. These models were required to account for normal electrical performance as well as performance in an environment of ionizing and/or neutron radiation. Techniques were established to derive models... View full abstract»

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  • Lumped Model Analysis of Semiconductor Devices Using the NET-2 Circuit/System Analysis Program

    Publication Year: 1972, Page(s):103 - 107
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (893 KB)

    Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a... View full abstract»

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  • Analytical Techniques for the Determination of Equipment Probability of Survival to Radiation Stress

    Publication Year: 1972, Page(s):108 - 114
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (997 KB)

    Two analytical techniques (Monte Carlo and Small Sample Theory) are described which have been used to produce a survivability function, PS(RS), for equipment subject to a radiation stress, RS. The methods have been used for permanent damage due to neutron fluence and transient upset due to ionizing radiation. The methods are illustrated using a series regulator circuit. The techniques are sufficie... View full abstract»

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  • Bipolar Transistor Screening Methods for Neutron Hardness Assurance

    Publication Year: 1972, Page(s):115 - 120
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (906 KB)

    A detailed bipolar transistor model has been developed to determine the dependence of post-irradiation electrical parameters on preirradiation electrical measurements and physical parameters. Some of the features of the model are the following: (a) Postirradiation lifetimes vary with injection level. (b) Electric fields in base and emitter regions increase the emitter efficiency and normal base tr... View full abstract»

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  • Prevalent Error Sources in Transistor Delay-Time Measurements

    Publication Year: 1972, Page(s):121 - 124
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1258 KB)

    Measurements of bipolar transistor delay times are extensively employed to predict neutron vulnerability. Of the various possible delay times, phase delay is most commonly measured. Although this is the simplest delay measurement to implement, the measurement circuit may be quite susceptible to extraneous signal coupling at the measurement frequency and this can cause the accuracy to be severely d... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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