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Nuclear Science, IEEE Transactions on

Issue 4 • Date Aug. 1972

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Displaying Results 1 - 10 of 10
  • Table of contents

    Publication Year: 1972 , Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1972 , Page(s): c2
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  • The Nucleus

    Publication Year: 1972 , Page(s): 1
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  • Evaluation of Gd2O2S:Tb as a Phosphor for the Input Screen of X-Ray Image Intensifier

    Publication Year: 1972 , Page(s): 3 - 8
    Cited by:  Papers (1)
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    X-ray fluorescent screens consisting of a powder embedded in a silicone resin matrix and deposited on an aluminum plate have been prepared with the phosphors Gd2O2S:Tb and (ZnCd)S:Ag(P-20) at a series of different screen thicknesses. The x-ray conversion efficiency of the screens was measured using both radioisotopes and a dental radiography unit as x-ray sources. To simulate screen performance in an x-ray image intensifier tube, the screens were optically coupled to the photomultiplier which served as the detector. We found that Gd2O2S:Tb screens were substantially superior to P-20 screens in both x-ray conversion efficiency and x-ray energy absorption efficiency. Experimental screen efficiencies agree with those derived from theory by an analysis in which the efficiency of the conversion of absorbed x-ray energy to light is assumed equal to the energy efficiency of the phosphor under cathode ray excitation and optical parameters of the screens are used to estimate the efficiency with which the generated light is transmitted to the detector. View full abstract»

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  • Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320°K

    Publication Year: 1972 , Page(s): 9 - 19
    Cited by:  Papers (5)
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    The average energy expended to create an electron-hole pair in silicon ¿Si(T) has been measured in the 5-320°K temperature range with thin totally depleted surface barrier and diffused junction radiation detectors. The data have been normalized to a value of ¿Si (300°K) = 3.62 eV. A dependence of ¿Si on T much weaker than previously published by other authors has been observed. In the examined temperature range (5-320°K) our data are well fitted by ¿si(T) = 2.15 Eg(T) + 1.21 eV where Eg(T) (in eV) is the value of the forbidden bandgap. View full abstract»

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  • Overvoltage and Breakdown Patterns of Fast Marx Generators

    Publication Year: 1972 , Page(s): 20 - 31
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    Spark gap overvoltages of fast Marx generators in the 100-300 kv range were studied as a function of stray and interstage capacitance for several circuit designs. Overvoltage measurements were made at low voltages by simulating the spark with a silicon-controlled rectifier. Breakdown times were measured to nanoseconds by viewing the light flash from the sparks with a fast photomultiplier. The influence of the ultraviolet irradiation on breakdown time was studied by masking the first gap. Practical conclusions for Marx generator design are presented. View full abstract»

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  • A Method of Calculating the Pitch Angle Distributions of Particle Fluxes Based on Rocket and Satellite Data

    Publication Year: 1972 , Page(s): 32 - 36
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    A method of calculating pitch angle distributions of fluxes of charged particles in a magnetic field based on rocket and satellite data is described. The accuracy of this method is estimated and a sequence of instructions is given to help in performing such calculations. View full abstract»

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  • Contributors

    Publication Year: 1972 , Page(s): 37 - 38
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  • Information for authors

    Publication Year: 1972 , Page(s): 38a
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  • Affiliate Plan of the IEEE Nuclear Science Group

    Publication Year: 1972 , Page(s): 38-b
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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