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IEEE Transactions on Nuclear Science

Issue 6 • Date Dec. 1971

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Displaying Results 1 - 25 of 73
  • [Front cover]

    Publication Year: 1971, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1971, Page(s): c2
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  • Table of contents

    Publication Year: 1971, Page(s):1 - 5
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  • Conference

    Publication Year: 1971, Page(s): 6
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  • The Nucleus

    Publication Year: 1971, Page(s): 7
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  • Summary of 1971 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1971, Page(s): 8
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  • IEEE Nuclear Science Group Radiation Effects Committee

    Publication Year: 1971, Page(s): 9
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  • 1971 IEEE Conference Outstanding Paper Award

    Publication Year: 1971, Page(s): 10
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  • Charge-State Effects in Displacement Damage Invited Paper

    Publication Year: 1971, Page(s):11 - 20
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1258 KB)

    Charge-state effects in displacement damage in covalent semiconductors are reviewed. Specifically the influence on defect production mechanisms, configurations, mobility, annealing kinetics, interaction and dissociation are discussed. The recent theoretical work on the split-interstitial is mentioned, as is the new athermal migration mechanism. View full abstract»

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  • Neutron-Induced Metallic Spike Zones in GaAs

    Publication Year: 1971, Page(s):21 - 30
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2088 KB)

    The metallic spike model for neutron damage has been shown to account for the observed anomalous infrared absorption in GaAs. In this paper, the electrical properties of semiconductors containing metallic spikes are explored. The metallic zones are shown to act as deep potential wells which trap carriers from the host semiconductor energy bands. The component of mobility associated with carrier sc... View full abstract»

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  • Radiation-Induced Changes in the Photoluminescence Spectra of Cadmium Sulfide

    Publication Year: 1971, Page(s):31 - 39
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1311 KB)

    Radiation-induced changes in the photoluminescence spectra of cadmium sulfide have been measured over a wavelength range from 4800 to 5400 Å. Gamma-ray induced changes in the 4.2°K photoluminescence spectra show a reduction in intensity of bound exciton transitions I1 and I5 and edge emission in contrast to an enhancement of a spectral line at 4867.2 Å (which we designate as IR). These changes ... View full abstract»

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  • Radiation-Induced Laser Action in CdSe

    Publication Year: 1971, Page(s):40 - 44
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    Laser emission of CdSe excited by Ga(AsP) laser diode has been studied near liquid helium temperature both before and after irradiation with fast neutrons. Irradiation introduces new laser peaks at ~6895Å, ~690Å, and ~6924Å, which are situated at longer wavelengths as compared to the peaks observed before irradiation. The laser peak at ~6905Å can be associated with the strong spontaneous emiss... View full abstract»

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  • Short-Term Annealing in Transistors Irradiated in the Biased-Off Mode

    Publication Year: 1971, Page(s):45 - 49
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (499 KB)

    A set of experiments was performed at the White Sands Missile Range Fast-Burst Reactor Facility in which measurements were made of the annealing of three types of transistors (two NPN and one PNP) which were irradiated while biased off. Anneal factors as high as 5 or 6 were observed in the NPN devices when turned on tens of milliseconds after the neutron burst. The PNP device (2N2875) showed an an... View full abstract»

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  • Neutron Produced Trapping Centers in Junction Field Effect Transistors

    Publication Year: 1971, Page(s):50 - 59
    Cited by:  Papers (33)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1407 KB)

    The junction field effect transistor has been employed to study trapping centers introduced in silicon by fast neutron irradiation. Extensive measurements have been made of both the static and dynamic characteristics of irradiated devices. The effects of neutron-produced traps have been explored in both n and p channel devices, as a function of neutron fluence and dopant concentration. The trappin... View full abstract»

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  • Carrier Removal Effects in Neutron-Irradiated Lithium-Doped Silicon

    Publication Year: 1971, Page(s):60 - 68
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1320 KB)

    Carrier removal effects in n-type silicon as a result of neutron irradiation and subsequent heat treatment have been monitored by Hall effect and conductivity measurements at a temperature of 275°K. Samples of float-zoned, crucible, and Lopex grown (¿=100 to 0.3¿-cm) phosphorus-doped silicon and float-zoned and Lopex grown (¿= 30 to 0.3¿-cm) lithium-doped silicon were irradiated at ambient te... View full abstract»

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  • Calculation of Reverse Annealing in Neutron Damaged p-Type Silicon

    Publication Year: 1971, Page(s):69 - 77
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1175 KB)

    A calculation of the reverse annealing process in neutron-burst irradiated p-type silicon at 300°K was performed, utilizing a variation of the equilibrium cluster theory of Gregory. Material conditions which were considered included 1, 10, and 100 ¿-cm material with an injection ratio of 10-6 , and 1 ¿-cm material with injection ratios of 10-7 and 10-8. This calculation demonstrated the relatio... View full abstract»

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  • Sorption on TV-VI Single Crystal Films - A View of Chemical Sensing

    Publication Year: 1971, Page(s):78 - 83
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  • Study of Ionizing Radiation Damage in MOS Structures Using Internal Photoemission

    Publication Year: 1971, Page(s):84 - 90
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1405 KB)

    The effects of ionizing radiation in large-geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon-silicon dioxide and the silicon dioxide-metal (chromium and aluminum) interfaces were measured before and after irradiation in a Co60 gamma cell. It was determined that the measured barrier energy heights may be considerably reduced by rad... View full abstract»

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  • Radiation and Oxide-Metal Interactions in MOS

    Publication Year: 1971, Page(s):91 - 98
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1236 KB)

    Radiation stability of the MOS system is controlled by the oxide-silicon and oxide-metal barriers; oxide-metal interactions and certain dopants appear to affect the radiation sensitivity. It is shown that the OS system behaves differently from the MOS system. The effect of metals have been studied with the use of aluminum, molybdenum and chromium. Chromium appears to be a desirable metal; when thi... View full abstract»

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  • Vacuum Ultraviolet Radiation Effects in SiO2

    Publication Year: 1971, Page(s):99 - 105
    Cited by:  Papers (137)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1399 KB)

    Charging effects observed in MOS structures which have been exposed to sputtering plasmas or electron beam deposition suggest that Vacuum Ultraviolet (VUV) or soft X-radiation is important in producing these effects. Our experiments show that under positive gate bias VUV irradiation produces large positive charging effects for photon energies above 8.8 eV, the threshold for electron-hole pair crea... View full abstract»

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  • Short-Term Charge Annealing in Electron-Irradiated Silicon Dioxide

    Publication Year: 1971, Page(s):106 - 112
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1388 KB)

    The existence of a rapid annealing phase in the decay of space charge induced in silicon dioxide by pulsed irradiation has been demonstrated. This effect has been observed in MOS structures prepared from both wet and dry thermal oxides and also in several commercial N-channel MOSFET's. A simple model involving thermal release of the trapped positive charge from a distribution of oxide trapping lev... View full abstract»

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  • Defect Structure and Irradiation Behavior of Noncrystalline SiO2

    Publication Year: 1971, Page(s):113 - 116
    Cited by:  Papers (63)
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    Various phenomena occuring during ionizing or particle irradiation of vitreous silica and Si-SiO2 interface structures are explained. Densification and changes in bond polarizability are due to the basic trend of maximizing ¿-bonding between Si and O atoms with minimum bond strain. Hole trapping in SiO2, as exhibited, e.g., in irradiated MOS devices, is an intrinsic property of the Si-O bond. Irr... View full abstract»

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  • Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator

    Publication Year: 1971, Page(s):117 - 125
    Cited by:  Papers (101)
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    It has been found for p-channel MOS devices that considerably better radiation tolerance than generally believed possible can be obtained with gate insulators of thermally grown SiO2, provided that the processing conditions are optimized for radiation resistance. The oxidation ambient and temperature, the post-oxidation annealing temperature, the silicon orientation, and the method of depositing t... View full abstract»

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  • Electronic Recovery from Radiation Effects in CMNOS Structures

    Publication Year: 1971, Page(s):126 - 130
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (594 KB)

    We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Å. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport ... View full abstract»

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  • Relaxation Phenomena Associated with Radiation-Induced Trapped Charge in Al2O3 MOS Devices

    Publication Year: 1971, Page(s):131 - 137
    Cited by:  Papers (5)
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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