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Nuclear Science, IEEE Transactions on

Issue 2 • Date April 1970

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Displaying Results 1 - 15 of 15
  • Table of contents

    Publication Year: 1970 , Page(s): c1
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  • IEEE Nuclear Science Group

    Publication Year: 1970
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  • The Nucleus

    Publication Year: 1970 , Page(s): 1
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  • Erratum

    Publication Year: 1970 , Page(s): 2
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  • Magnbeic Recording of Neutron Cross-Section Data from an Undergrolund Nuclear Explosive Source

    Publication Year: 1970 , Page(s): 3 - 6
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1338 KB)  

    A high-resolution magnetic data recording system has been successfully used as part of the Los Alamos program of time-of-flight neutron cross-section measurements that use an underground nuclear explosion source. The data received were recorded in frequency modulation form on a rotating hard-surfaced magnetic disc. This is a novel way of recording these data. Magnetic recording facilitates electro... View full abstract»

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  • Parallel Tunnel Diode Coincidence Circuit

    Publication Year: 1970 , Page(s): 7 - 17
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    A fast coincidence circuit which operates reliably over a wide range of input-pulse amplitudes is described. The ratio of the current which is applied to the main tunnel diode when the circuit receives a noncoincident input-pulse to that when both inputs of the circuit receive coincident input-pulses, is always one to four, independent of input-pulse amplitudes. The value of the current to be appl... View full abstract»

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  • Stability Analysis of a Nonlinear Reactor Control System

    Publication Year: 1970 , Page(s): 18 - 25
    Cited by:  Papers (2)
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    A method for testing control system stability is presented, which is useful for finding the limit cycles of high order systems with multiple nonlinearities. The presented method is applied to the analysis of the control system of a material testing reactor, and a comparison with the method in a current literature is given. View full abstract»

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  • Lifetime in Neutron Irradiated Silicon - Application to Devices

    Publication Year: 1970 , Page(s): 26 - 33
    Cited by:  Papers (4)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1033 KB)  

    Detailed measurements on special gated Si p+n diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. For recombination in the neutral bu... View full abstract»

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  • New Design Techniques of Variable Prescaling Counters for Spaceborne Experiments

    Publication Year: 1970 , Page(s): 34 - 39
    Cited by:  Papers (1)
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    The design techniques of prescaling counters for the automatic compression of particle measure ment data on board of spacecrafts are reviewed and new criteria are proposed, which are illustrated by examples. The standard technique of realizing logarithmic counters is criticized and alternative procedures are proposed that take into account both the effect of the statistical error, when counting ev... View full abstract»

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  • Measurevent of the Transient Effects of a Gamtma-Flux on the Energy Resolution of Surface-Barrier Silicon Detectors

    Publication Year: 1970 , Page(s): 40 - 51
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    The energy resolutions of surface barrier n-type silicon detectors counting al pha-particles were measured under the disturbance of 1.25 MeV gamma-fluxes ranging from 2.3 x 107 to 3.8 x 108 photons cm-2 sec-1 and for detectors having different total thicknesses and resistivities. The results obtained confirm the existence of a zone about 100 micron wide and external to the depletion layer of parti... View full abstract»

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  • Predicted Effects of Neutron Irradiation on GaAs Junction Field Effect Transistors

    Publication Year: 1970 , Page(s): 52 - 54
    Cited by:  Papers (14)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (348 KB)  

    The fast-neutron-induced degradation of the properties of n-channel GaAs junction field effect transistors (JFET) is estimated and the results are compared with the effects produced in n-and p-channel silicon field effect transistors. The estimated degradation of the maximum transconductance, maximum drain current, pinch-off voltage, and cutoff frequency is based on electrical measurement data tak... View full abstract»

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  • 1970 IEEE Annual Conference Nuclear and Space Radiation Effects

    Publication Year: 1970 , Page(s): 55
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  • Contributors

    Publication Year: 1970 , Page(s): 57 - 59
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  • Information for authors

    Publication Year: 1970 , Page(s): 59a
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  • Affiliate Plan of the IEEE Nuclear Science Group

    Publication Year: 1970 , Page(s): 59-b
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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