By Topic

Nuclear Science, IEEE Transactions on

Issue 6 • Date Dec. 1968

Filter Results

Displaying Results 1 - 25 of 52
  • [Front cover]

    Publication Year: 1968 , Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (44 KB)  
    Freely Available from IEEE
  • IEEE Nuclear Science Group

    Publication Year: 1968 , Page(s): c2
    Save to Project icon | Request Permissions | PDF file iconPDF (128 KB)  
    Freely Available from IEEE
  • Table of contents

    Publication Year: 1968 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | PDF file iconPDF (329 KB)  
    Freely Available from IEEE
  • The Nucleus

    Publication Year: 1968 , Page(s): 5
    Save to Project icon | Request Permissions | PDF file iconPDF (143 KB)  
    Freely Available from IEEE
  • Summary of 1968 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1968 , Page(s): 6 - 7
    Save to Project icon | Request Permissions | PDF file iconPDF (969 KB)  
    Freely Available from IEEE
  • IEEE Nuclear Science Group Radiation Effects Committee

    Publication Year: 1968 , Page(s): 8
    Save to Project icon | Request Permissions | PDF file iconPDF (192 KB)  
    Freely Available from IEEE
  • 1968 Outstanding Conference Papers Award

    Publication Year: 1968 , Page(s): 9
    Save to Project icon | Request Permissions | PDF file iconPDF (960 KB)  
    Freely Available from IEEE
  • Ion Implantation in Semiconductors: Lattice Disorder and Electrical Effects

    Publication Year: 1968 , Page(s): 10 - 21
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2082 KB)  

    Ion implantation techniques have been used to form p-n junctions and device structures. The anneal characteristics are influenced by reordering of the lattice, radiation damage effects, and the lattice location of the implanted species. Hall effect and channeling techniques have been used to evaluate the nature of the implanted layer. Anneal data suggests that there is similarity in the disorder p... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Factors Influencing the Stability of Radiation Defects in Semiconductors

    Publication Year: 1968 , Page(s): 22 - 29
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1752 KB)  

    Recent advances in the understanding of radiation damage in semiconductors are discussed and areas of difficulty are indicated. Most attention is focused upon (a) stability of close-pair defects resulting from low temperature irradiation with energetic (0.7 to 5 Mev) electrons, (b) the yield of permanent damage in germanium as a function of temperature, (c) damage of intermediate stability in germ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Radiation Damage to Chromosomes

    Publication Year: 1968 , Page(s): 30 - 33
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (854 KB)  

    The foregoing, I think, does give some idea of the types of things that can be done and have been done in experiments on chromosome aberrations. The studies I discussed represent basic radiobiological research on chromosomes. I would like to point out, however, that the information obtained from such basic studies is being used in a practical way. For instance, in the field of cancer radiotherapy ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Recombination Centers in Gamma-Irradiated Arsenic-Doped Germanium

    Publication Year: 1968 , Page(s): 34 - 41
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1352 KB)  

    A comprehensive investigation has been performed of the properties of recombination centers introduced in As-doped Ge by Co60 gamma rays. Materials of three resistivities were used: ~0.2, ~1 and ~8 ¿-cm. Measurements of lifetime versus temperature were made at low excess densities following various anneals. Numerous measurements of lifetime as a function of excess density with temperature as a pa... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Carrier Scattering from Defects in Neutron-Bombarded Semiconductors

    Publication Year: 1968 , Page(s): 42 - 46
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (585 KB)  

    Recent experimental evidence for the clustering of defects in neutron-irradiated semiconductors has led to a revived interest in the model proposed by Gossick (Ref. 2). This paper presents some theoretical extensions of Gossick's model, in which a simple defect model is used to describe some structure-sensitive properties. Poisson's equation and equations for carrier density have been solved for t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Annealing of 10 MeV Electron Damage in Silicon

    Publication Year: 1968 , Page(s): 47 - 54
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1470 KB)  

    Annealing studies were performed to investigate the recovery of both the carrier concentration and lifetime in silicon following room temperature irradiation with 10-MeV electrons. Both n- and p-type material containing the more common dopants and varying amounts of oxygen were employed to evaluate the effect of these impurities on the annealing behavior. The recovery of carriers in n-type materia... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Defect Clusters in Electron-Irradiated Silicon

    Publication Year: 1968 , Page(s): 55 - 60
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (958 KB)  

    Calculations of the formation of disordered regions in silicon due to irradiation by high energy (15-45 MeV) electrons indicate that a sufficient concentration of defect clusters is produced to affect the electrical properties of the material. Isochronal annealing of room temperature radiation-induced degradation in the short-circuit current of silicon solar cells and in the minority carrier lifet... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Recovery Rate and Capacitance Measurements on Irradiated Lithium-Containing Solar Cells

    Publication Year: 1968 , Page(s): 61 - 68
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1373 KB)  

    Room temperature recovery kinetics of lithium-containing p/n silicon diodes and solar-cells were experimentally investigated after irradiation by 1 MeV electrons to fluences of 1013 and 1014 e/cm2. The current physical model for the recovery process involves the diffusion of a lithium donor ion to a radiation-induced vacancy-impurity defect with negative charge and high hole-capture cross section,... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrical Properties of Neutron-Irradiated Silicon at 76°K: Hall Effect and Electrical Conductivtty

    Publication Year: 1968 , Page(s): 69 - 76
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2447 KB)  

    Defects produced in p-type silicon by neutron irradiation have been investigated using electrical conductivity and Hall effect measurements at 76°K. Samples from crucible-grown (1, 10, and 50 ohm-cm) and float-zone (10 ohm-cm) boron-doped silicon were irradiated at 76°K with nearly fission spectrum neutrons and annealed isochronally between 76° and 700°K. The electrical properties of neutron-i... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Capacitance Recovery in Neutron-Irradiated Silicon Diodes by Majority and Minority Carrier Trapping

    Publication Year: 1968 , Page(s): 77 - 83
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (988 KB)  

    Majority and minority carrier trapping has been studied in neutron-irradiated silicon diodes by transient junction capacitance recovery as well as by capacitance-versus-frequency and pulsed field effect techniques. After exposure to damaging radiation, trapping results in a transient time dependence of depletion layer width which may determine the survivability of depletion layer devices in a radi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Rapid Annealing in Silicon Transistors

    Publication Year: 1968 , Page(s): 84 - 87
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (957 KB)  

    Rapid annealing data after a pulse of reactor neutrons for seven NPN planar transistors at room temperature and the 2N1613 at various temperatures down to dry ice were interpreted in terms of the motion of a single type of mobile defect. An equation was derived for the recombination of the defect with fixed defects in a spherical cluster and the subsequent diffusion of the defect outside the clust... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Recombination Statistics for Neutron Bombarded Silicon Transistors

    Publication Year: 1968 , Page(s): 88 - 94
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1186 KB)  

    This paper presents a recombination statistical model for the neutron-induced base current component reported previously. The derivation was based on the following: 1) the current equation for the induced current component developed previously; 2) the Shockley-Read-Hall statistics for holes and electrons; and 3) the recombination statistics derived by Sah, Noyce and Shockley for sites in the bulk ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Radiation and Annealing Characteristics of Neutron Bombarded Silicon Transistors

    Publication Year: 1968 , Page(s): 95 - 107
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1900 KB)  

    Operating a silicon planar epitaxial transistor in the inverse configuration allows one to demonstrate clearly the importance of the neutron-induced base current component and its degradation of the emitter efficiency, and, because of the much larger depletion layer, to compute a volume dependent damage constant applicable to all silicon p-n junctions. The importance of minimizing the absolute cha... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The Effects of Neutron Radiation on Second Breakdown and Thermal Behavior of Silicon Transistors

    Publication Year: 1968 , Page(s): 108 - 113
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (770 KB)  

    A method of measuring and the subsequent analysis of this data has indicated that the "thermal time constant" of silicon diffused transistors decreases with increasing neutron dosage. Emperically, it was noted that thermal time constant degradation constants, Kÿ, can be assigned to all devices examined. For the silicon planar devices studied, degradation constants varied from 2.6 × 10-13cm2/neut... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Radiation Effects on Silicon Avalanche (Impatt) Diodes

    Publication Year: 1968 , Page(s): 114 - 125
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1922 KB)  

    The effects of fast neutrons with fluences up to 1016 n/cm2 on both dc and microwave characteristics of nearly abrupt X-band avalanche diodes have been studied. Good forward dc characteristics were observed up to 2×1015 n/cm2. At higher doses, the forward characteristics are degraded by the formation of a thin intrinsic layer at the metallurgical PN junction. The thickness of the intrinsic layer ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Neutron Radiation Effects on MOS Fets: Theory and Experiment

    Publication Year: 1968 , Page(s): 126 - 132
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1692 KB)  

    The effects of a pure neutron environment on Metal-Oxide-Semiconductor Field Effect Transistors (MOS-FET) is studied. A model for neutron-produced ionization in the oxide layer is presented. The energy partition between atomic displacement and electronic ionization processes in the nuclear scattering interaction is calculated and compared to the Lindhard model. It is shown that the neutron ionizat... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Statistical Modeling of Semiconductor Devices for the Tree Environment

    Publication Year: 1968 , Page(s): 133 - 139
    Cited by:  Papers (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (978 KB)  

    The modeling of semiconductor devices for use with circuit analysis computer codes is a very important endeavor. The accuracy of the model ultimately will determine the accuracy of the analysis and its relation to actual circuit operation. The transistor model used in the Autonetics Transient Radiation Analysis by Computer (TRAC) code is discussed. Particular emphasis is placed on the simulation o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Techniques for Investigating Integrated Circuit Dielectric Isolation Media

    Publication Year: 1968 , Page(s): 140 - 153
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1924 KB)  

    This paper describes two different techniques for investigating the dielectric isolation of integrated circuits manufactured by this method of isolation. The study concentrates on the two radiation effects of induced transient conductivity and charge storage in silicon dioxide. The first technique is theoretical involving a mathematical model which considers some of the physical processes in silic... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA