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Nuclear Science, IEEE Transactions on

Issue 5 • Date Oct. 1968

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Displaying Results 1 - 12 of 12
  • Table of contents

    Page(s): c1
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  • IEEE Nuclear Science Group

    Page(s): c2
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  • The Nucleus

    Page(s): 1
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  • The Second Stage Noise Contribution of a Nuclear Pulse Amplifier

    Page(s): 2 - 5
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    The noise contribution P of the second stage relative to that of the preamplifier is derived as a function of its own noise parameters, the noise parameters and gain of the preamplifier, and the elements RoCo of the coupling network. Design criteria are derived, if the second stage either precedes or follows the short differentiator. For the latter case it is shown, that a lower limit exists for P if Co is greater, and Ro is smaller than a certain critical value. The resulting time-constant RoCo, for which that lower limit is obtained, is considerably shorter than the shaping time constant T. Hence, P may be reduced if the detector current impulse is recovered from the preamplifier output step by choosing RoCo < < T, and if shaping is postponed to a later stage. The paper concludes with a short discussion of the implications which these considerations have upon the design of the amplifier stage following the first differentiator. View full abstract»

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  • On the Origin of Leakage Current in Ge(Li) Gamma-Ray Detectors

    Page(s): 6 - 8
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    Hole-electron pair generation in Ge(Li) ¿-ray detectors due to thermal radiation from the cryostat outer casing is suggested as an often overlooked source of detector leakage current. Thermal-radiation-induced currents of the order of 10-9A are estimated for a typical large coaxial detector at 77°K when the cryostat outer casing is at 300°K. View full abstract»

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  • Neutron Energy Dependence of Excess Charge Carrier Lifetime Degradation in Silicon

    Page(s): 9 - 17
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    Silicon p-i-n diode-neutron dosimeters were irradiated with monoenergetic neutrons having energies from 0.36 to 4.77 MeV. The variation with neutron energy of the damage coefficient for diode storage time, ¿T = ¿(l/Ts)/¿, and diode forward voltage sensitivity at constant current, S = ¿Vf/¿, were determined and found to be equal. Since ¿T; and S are linearly related to the damage coefficient for high level lifetime, ¿T; = ¿(1/¿)/¿, the variation with neutron energy of ¿T was also determined. Theoretically, it has been hypothesized that ¿T is proportional to N¿r(En), the average number of active recombination centers added per cm3 per neutron of energy En incident per cm2. It was further hypothesized that N¿r(En) is proportional to ¿(En), the average energy given to lattice atoms per cm3 per neutron of energy En incident per cm2. The theory of Lindhard, Nielson, Scharff, and Thomsen together with published values for differential neutron-silicon scattering, was used to calculate ¿(En). Comparison of theoretical and experimental results shows that ¿T, S, and ¿(En) do indeed have substantially the same neutron energy dependence. View full abstract»

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  • On the Radio Frequency Ion Source

    Page(s): 18 - 20
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    A radio frequency positive ion source employing a non-magnetic analyzer is proposed with the eventual purpose to overcome the difficulties involved in confining, extracting and filtering ion beams. View full abstract»

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  • Focussing the XP1020 Photomultiplier for Minimum Time Spread

    Page(s): 21
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  • Johnson's Theory of Intertransformation

    Page(s): 22
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  • Contributors

    Page(s): 23 - 24
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  • Information for authors

    Page(s): 24a
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  • Affiliate Plan of the IEEE Nuclear Science Group

    Page(s): 24-b
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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