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IEEE Transactions on Nuclear Science

Issue 6 • Date Dec. 1967

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Displaying Results 1 - 25 of 53
  • Table of contents

    Publication Year: 1967, Page(s): c1
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  • IEEE Nuclear Science Group

    Publication Year: 1967, Page(s): c2
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  • Table of contents

    Publication Year: 1967, Page(s):1 - 4
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  • The Nucleus

    Publication Year: 1967, Page(s): 5
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  • 1967 Radiation Effects Conference

    Publication Year: 1967, Page(s):6 - 7
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  • Committee

    Publication Year: 1967, Page(s): 8
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  • 1967 Conference Paper Award

    Publication Year: 1967, Page(s): 9
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  • Germanium γ-ray spectrometers

    Publication Year: 1967, Page(s):10 - 26
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4663 KB)

    Potential uses of the Ge(Li) diode detector as part of a spectrometer system for space experimentation would include identification of energy sources and determination of the composition of materials. In laboratory experiments its greatest application is in low-energy nuclear physics, mainly (n, γ) reaction studies. The primary advantage in its present use is energy resolving capability. I... View full abstract»

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  • Some Plasma Effects in Semiconductors

    Publication Year: 1967, Page(s):27 - 39
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5266 KB)

    This is a review of some selected plasma effects in semiconductors, principally InSb at 77° K. The production of nonequilibrium electronhole plasmas by electrical injection and impact ionization is described including some instabilities which attend the latter process. Some new results on the pinch effect obtained by diagnosis with a 10.6 ¿ CW laser are shown. Observations of the manifestation o... View full abstract»

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  • Effect of Low Temperature Electron-Irradiation on the Electrical Properties of Undoped GaSb

    Publication Year: 1967, Page(s):40 - 45
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    Undoped GaSb samples were irradiated at 15°K and 80°K with 0.5 MeV and 1.0 MeV electrons. The effects of the irradiation on the temperature dependence of the Hall coefficient RH and the Hall mobility ¿H were investigated and a study of the recovery of the radiation-produced changes of these properties was made. After irradiation the Hall coefficient curves in a log RH vs T-1 diagram exhibit a m... View full abstract»

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  • Effect of Fast-Neutron Irradiation on Optical Attenuation in Compound Semiconductors

    Publication Year: 1967, Page(s):46 - 54
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1668 KB)

    Recently a model was proposed to account for anomalous infrared attenuation noted experimentally for fast-neutron-irradiated, compound semiconductors. The model represents neutron damage by localized phase transitions to a high-pressure metallic-like state. It is shown that this model not only accounts for the anomalous, continuous optical attenuation at photon energies less than the band gap, but... View full abstract»

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  • Mechanisms of Radiation Effects on Lasers

    Publication Year: 1967, Page(s):55 - 61
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    Lasers offer many potential advantages for space communications and space instrumentation. Their performance is, however, affected by the high energy radiation found in the space environment, e.g., trapped proton and electrons, solar flare protons, and possibly gamma rays and neutrons from on-board nuclear power, auxiliary or propulsive. We report here on some studies of the effects observed on la... View full abstract»

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  • Transient radiation effects in optical materials

    Publication Year: 1967, Page(s):62 - 67
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1506 KB)

    The use of the prototype Phermex electron accelerator to simulate high dose rate nuclearradiation environments is discussed. The free electron density produced in optical materials by the beam from this machine, and that expected from a typical incident prompt-gamma radiation flux are compared. An experimental setup to measure the effects on the transmission of selected optical materials is descri... View full abstract»

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  • Injection-Level Studies in Neutron-Irradiated Silicon

    Publication Year: 1967, Page(s):68 - 77
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1526 KB)

    The dependence of carrier lifetime on excess density was investigated for neutron-irradiated silicon. Five bulk specimens of n-type (1.0 to 55 ohm-cm) and five of p-type material (2.2 to 56 ohm-cm) were employed. In all cases the lifetime was constant at low excess densities, increased to a value several times larger at excess densities near the equilibrium carrier density, and then decreased. An ... View full abstract»

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  • Influence of Impurities on Carrier Removal and Annealing in Neutron-Irradiated Silicon

    Publication Year: 1967, Page(s):78 - 81
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (578 KB)

    The influence of impurities on carrier removal and annealing has been investigated in neutron-irradiated silicon in the resistivity range from 0.5 to 50 ohm-cm. Carrier removal rates in n-type material are strongly dependent upon the crystal growth method and are lower in Czochralski-grown (oxygen containing) material than in material grown by the vacuum-float-zone or LOPEX techniques. A slight de... View full abstract»

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  • Electron Damage Coefficients in P-Type Silicon

    Publication Year: 1967, Page(s):82 - 87
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (730 KB)

    Crucible grown p-type silicon, as used for the base of many commercial solar cells, exhibits a damage coefficient under electron bombardment that appears to involve a double defect in each recombination center. The damage coefficient has been fitted to an empirical formula that accounts for silicon resistivity and for energy of the bombarding particles. To apply this formulation to a practical eva... View full abstract»

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  • A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and Germanium

    Publication Year: 1967, Page(s):88 - 102
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2031 KB)

    A two level mnodel for recombination processes in neutron irradiated silicon and germanium is proposed. This model successfully explains published experimental data for lifetime and. life-time damage constant as a function of resistivity, injection level and, temperature. View full abstract»

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  • Role of Lithium in Damage and Recovery of Irradiated Silicon Solar Cells

    Publication Year: 1967, Page(s):103 - 109
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (846 KB)

    Lithium plays a role in the degradation and recovery of diffusion length in lithium-doped silicon p/n solar cells irradiated with 1 MeV electrons. Salient experimental results are that (1) the diffusion length degrades when these cells are irradiated at a fast rate; (2) the time constant for recovery of diffusion length decreases with lithium concentration, and increases with fluence, as ¿2/3; an... View full abstract»

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  • Radiation Damage in Lithium Doped Silicon

    Publication Year: 1967, Page(s):110 - 115
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (559 KB)

    Majority carrier removal rates for electron irradiation were studied in lithium doped float zone silicon. The removal appears to be due to reaction of lithium donors with displacement products to form uncharged complexes. A time dependent removal was observed after termination of the radiation. An exponential removal of carriers with electron fluence was also observed. View full abstract»

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  • Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon Devices

    Publication Year: 1967, Page(s):116 - 126
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2448 KB)

    Studies have been performed to explore accurately the injection level and temperature dependence of transient annealing in neutron-irradiated P- and N-type silicon. In P-type material, the annealing factor in the 0 to 0.1 second time interval is very sensitive to the minority carrier injection level. For example, by varying the injection level from 10-5 to 10-1 the annealing factor at 0.001 second... View full abstract»

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  • Factors Influencing Prediction of Transistor Current Gain in Neutron Radiation

    Publication Year: 1967, Page(s):127 - 133
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1202 KB)

    Prediction of transistor performance in neutron radiation is subject to many variables. Several of these were investigated in order to improve prediction accuracy. Experimental data are discussed for the base transit time parameter, variation in damage with different bias conditions during irradiation, changes in damage observed after room-temperature storage and repeated high current measurements... View full abstract»

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  • Annealing Characteristics of Neutron Irradiated Silicon Transistors

    Publication Year: 1967, Page(s):134 - 146
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1445 KB)

    When a transistor is subjected to neutron irradiation, a component of base current proportional to neutron fluence is induced. From the effects of annealing on the base and collector currents, the conclusion was drawn that there is an apparent difference in the annealing characteristics between the neutral and the space-charge regions of the semiconductor device. This study of the anomalous anneal... View full abstract»

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  • Application of Silicon Damage to Neutron Exposure Measurement

    Publication Year: 1967, Page(s):147 - 152
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1018 KB)

    A technique is described for using the damage in silicon to measure neutron exposure in Radiation Damage Units (RDUs) with transistors called Radiation Damage Monitors (RDMs). The technique is useful in measuring the damage gradients across experiments and in determining the relative damage effect of a neutron environment. Two calibration procedures are described, as are the operating characterist... View full abstract»

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  • The Analysis of Radiation Effects in Semiconductor Junction Devices

    Publication Year: 1967, Page(s):153 - 169
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2809 KB)

    A computer program has been written for the prediction of transient and permanent radiation damage in junction devices. This program calculates the transient solutions of Poisson's equation and the continuity equations throughout a one-dimensional structure. Mobility, lifetime, and carrier generation are described by nonlinear functions of carrier density and current so that scatter-limiting veloc... View full abstract»

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  • Computerized Model for Response of Transistors to a Pulse of Ionizing Radiation

    Publication Year: 1967, Page(s):170 - 178
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1199 KB)

    A computer program has been formulated to solve the time-dependent differential equations describing electron and hole concentrations and the electric field in one-dimensional planar semiconductor-device geometry. The usual assumptions of small minority-carrier concentration and requirements for separating devices into neutral and space-charge regions are not required since the depletion layer is ... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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