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IEEE Transactions on Nuclear Science

Issue 6 • Date Dec. 1966

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Displaying Results 1 - 25 of 52
  • [Front cover]

    Publication Year: 1966, Page(s): c1
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  • IEEE Nuclear Science Group

    Publication Year: 1966, Page(s): c2
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  • Table of contents [Annual conference on Nuclear and Space Radiation Effects - July 18-21, 1966]

    Publication Year: 1966, Page(s):1 - 5
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  • The Nucleus

    Publication Year: 1966, Page(s): 7
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  • Photographs Taken at Conference

    Publication Year: 1966, Page(s):8 - 9
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  • IEEE Nuclear Science Group Radiation Effects Committee

    Publication Year: 1966
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  • Theoretical and Experimental Determinations of Neutron Energy Deposition in Silicon

    Publication Year: 1966, Page(s):11 - 17
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1190 KB)

    Theoretical calculations have been made of the energy deposited in silicon in ionization and elastic interactions by neutrons in the energy range of 60 keV to 15 MeV. In contrast to earlier determinations, care was taken to calculate accurately the effects of atomic recoils. These are of primary importance for permanent effects in silicon at all neutron energies and account for about 30% of the tr... View full abstract»

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  • Study of n- and p-Type Silicon Exposed to Highly Energetic Radiation

    Publication Year: 1966, Page(s):18 - 23
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    For an understanding of displacement effects in semiconductors, it is important to establish a correlation of the magnitude of these effects with various types of radiation. A study has been made of the effect of highly energetic radiation on n-type silicon using two techniques. First, with electron-spin resonance studies, the energy dependence of formation of the Si-Bl center at 80?? and 300??K b... View full abstract»

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  • Defect-Impurity Relationships in Electron-Damaged Silicon

    Publication Year: 1966, Page(s):24 - 32
    Cited by:  Papers (3)
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    Crucible grown p-type silicon crystals with various dopants were irradiated with 1 MeV electrons. The Hall coefficient measurements indicated that the introduction rate of the Ev + 0.3 eV energy level was independent of the chemical acceptor atoms and the dislocation density. This energy level was not found in similar float zone crystals. The evidence supports a defect complex with oxygen, but doe... View full abstract»

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  • Effects of Oxygen and Dopant on Lifetime in Neutron-Irradiated Silicon

    Publication Year: 1966, Page(s):33 - 40
    Cited by:  Papers (30)
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    Neutron-induced degradation of carrier lifetime in silicon was observed for n- and p-type material containing various amounts of oxygen and different dopant impurities. There was no observable dependence of lifetime degradation on oxygen concentration. No dependence on type of dopant was observed in n-type silicon, and only small effects appeared to occur in p-type material. Evidently the recombin... View full abstract»

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  • Paramagnetic Centers in Neutron Irradiated Calcium Tungstate Single Crystals

    Publication Year: 1966, Page(s):41 - 46
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  • Effect of Injection Level on Carrier Lifetime in Neutron-Irradiated Germanium

    Publication Year: 1966, Page(s):47 - 52
    Cited by:  Papers (3)
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    The dependence of minority carrier lifetime on injection level was analyzed to yield recombination center parameters for neutron-irradiated germanium. The results are an improvement over data obtained by other methods because they eliminate a possible dependence of capture probability on temperature, and are more sensitive to energy level position. Six n-type specimens doped with arsenic and antim... View full abstract»

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  • Transient Annealing in Sekiconductor Devices Following Pulsed Neutron Irradiation

    Publication Year: 1966, Page(s):53 - 62
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2227 KB)

    Transient annealing following pulsed neutron exposure has been investigated in silicon transistors and solar cells as a function of both irradiation temperature and injection level. In addition, experiments incorporating both X and gamma ray irradiation have demonstrated that transient annealing is a bulk, not a surface, effect. The observed annealing following neutron irradiation is considerably ... View full abstract»

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  • Fracture of Silicon and Germanium Induced by Pulsed Electron Irradiation

    Publication Year: 1966, Page(s):63 - 69
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1733 KB)

    This paper presents certain preliminary results on the fracture of silicon, germanium and indium antimonide resulting from pulsed electron irradiation. Experimental results show that the rapid absorption of energy can produce brittle fracture in the semiconducting materials silicon, germanium and indium antimonide. Samples were irradiated using the external electron beam from a flash X-ray generat... View full abstract»

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  • Transient Ionization Effects in Silicon Induced by 48 MeV Electron Pulses

    Publication Year: 1966, Page(s):70 - 85
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2101 KB)

    Transient radiation effects induced in silicon irradiated in the temperature range 90 to 300??K by 0.007 to 4.5 microsecond pulses of 48 MeV electrons were studied using the transient response of resistivity and Hall effect voltages as the measuring probes. Results are given for one ohm-cm phosphorus-doped n-type silicon and 10 to 100 ohm-cm n-type and p-type samples. In the case of one ohmcm sili... View full abstract»

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  • Anomalous Photocurrent Generation in Transistor Structures

    Publication Year: 1966, Page(s):86 - 94
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1351 KB)

    It has been previously reported that, at relatively modest dose-rates (~109 rad/sec), certain transistor types exhibit an anomalous primary photocurrent response which results in serious departures from the commonly assumed linear dose-rate dependence. This paper presents additional experimental evidence concerning the anomalous photocurrent problem and develops a model which explains the observed... View full abstract»

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  • Detailed Lumped-Model Analysis of Transistor Ionizing Radiation Effects

    Publication Year: 1966, Page(s):95 - 104
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1401 KB)

    Transient response of a transistor exposed to an ionizing radiation environment can be predicted solely from knowledge of the radiation environment and transistor lumped-model parameters calculated from geometrical and electrical data. Accuracy of the lumped-model transistor representation depends on the detail and accuracy of the data used for calculation of the lumped-model parameter values, an ... View full abstract»

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  • Simplified Engineering Techniques for Predicting Diode Tree Responses

    Publication Year: 1966, Page(s):105 - 108
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (494 KB)

    The feasibility of predicting equilibrium photocurrents in silicon switching diodes entirely from nondestructively measured electrical parameters is shown. The prediction method is derived from the basic theoretical equation for diode photocurrent. Junction areas and depletion widths are related to avalanche voltages and capacitance-voltage characteristics by a general solution to McKay's avalanch... View full abstract»

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  • Breakdown of Dielectrics Due to Pulsed Electrons

    Publication Year: 1966, Page(s):109 - 118
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4133 KB)

    Spontaneous dielectric breakdown was studied in methyl methacrylate polymer, Plexiglas, with a Field Emission Corporation Model 705 Febetron. The breakdown plane was influenced by the presence of embedded metal foils. Charge deposition was measured in a stack of thin sheets of Plexiglas and compared favorably with the calculated charge deposition under the condition of no charge buildup. The energ... View full abstract»

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  • Theory of Transient Electrical Effects in Irradiated Insulators

    Publication Year: 1966, Page(s):119 - 126
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1375 KB)

    A theoretical analysis of the transient response of insulators to various types of irradiating particles is given by considering the different nature of the paths of ionized electrons that are formed by the primary radiation. Theory shows that for the class of insulators with a low dielectric constant, the transient response from a densely ionizing particle will be much less than that of a lightly... View full abstract»

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  • Photoconductivity Processes in Low Mobility Organic Materials

    Publication Year: 1966, Page(s):127 - 129
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    Recent results obtained on anthracene crystals make it possible to calculate the number of carriers created in polymers when they are subjected to high energy radiation. These results are described and applied to some recently reported measurements on polystyrene. Reasonable values are found for such quantities as carrier mobility and trap densities. View full abstract»

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  • Effects of Pulsed Ionizing Radiation on Some Selected Quartz Oscillator Crystals

    Publication Year: 1966, Page(s):130 - 140
    Cited by:  Papers (30)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2015 KB)

    The effects of high-energy ionizing radiation on the behavior and output frequency of electronic oscillators, whose frequency-determining elements were quartz crystals operating in the vicinity of 5 Mc, have been studied. Both fundamental- and fifth-overtone crystals were studied over a dose range from 3,000 rads (Si) to 2 Mrads (Si). The crystals studied were of two types: (1) standard commercial... View full abstract»

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  • Radiation Effects on Microcircuits

    Publication Year: 1966, Page(s):141 - 159
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2714 KB)

    Microcircuit response to nuclear radiations has become an increasingly important concern over the past year. This discussion will consider transient radiation effects (TRE); a companion discussion will cover space radiation effects. The interesting effects occur in two areas: displacement effects resulting from fast neutron irradiation, and ionizing effects caused by prompt pulses composed of x-ra... View full abstract»

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  • Space-Radiation Effects in Integrated Circuits

    Publication Year: 1966, Page(s):160 - 167
    Cited by:  Papers (3)
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  • Lithium-Doped Radiation-Resistant Silicon Solar Cells

    Publication Year: 1966, Page(s):168 - 173
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (729 KB)

    Photovoltaic measurements indicate that lithium in the n-type region of floating-zone silicon p-on-n solar cells interacts with radiation damage induced by 1 MeV electrons or 16.8MeV protons. The centers formed by this interaction do not degrade the minority-carrier lifetime; therefore, these cells are potentially the most radiation-resistant ones available. The interaction involves the motion of ... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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