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IEEE Transactions on Nuclear Science

Issue 5 • Date Oct. 1965

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Displaying Results 1 - 24 of 24
  • [Front cover]

    Publication Year: 1965, Page(s): c1
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  • IEEE Nuclear Science Group

    Publication Year: 1965, Page(s): c2
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  • Table of contents

    Publication Year: 1965, Page(s): i
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  • The Nucleus

    Publication Year: 1965, Page(s): ii
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  • Seen at the Conference

    Publication Year: 1965, Page(s):ii - iii
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  • IEEE/GNS Radiation Effects Committee

    Publication Year: 1965, Page(s): iv
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  • 1965 Conference Committee

    Publication Year: 1965, Page(s): iv
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  • Guest Editorial

    Publication Year: 1965, Page(s): v
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  • The Space Radiation Environment

    Publication Year: 1965, Page(s):1 - 17
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1673 KB)

    The particle space radiation environment is reviewed and some of the latest models for the various phenomena are presented. The properties of the solar wind and interplanetary magnetic fields based on recent satellite measurements are given and solar proton events are discussed. The magnetospheric cavity and the character of the boundary between it and the solar wind based on Imp 1 results are sho... View full abstract»

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  • Space Radiation Effects in Silicon Devices

    Publication Year: 1965, Page(s):18 - 29
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1661 KB)

    First Page of the Article
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  • Simplified Techniques for Predicting Tree Responses

    Publication Year: 1965, Page(s):30 - 39
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3041 KB)

    Previous prediction methods1 are extended by analysis of new experimental data. Improved engineering techniques are developed for predicting equilibrium primary photocurrents from transistor electrical parameters. For silicon low power planar and mesa transistors, ¿ICBO is related to high base current electrical storage time by a simple prediction equation. A radiation storage time parameter is d... View full abstract»

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  • Methods for Measuring and Characterizing Transistor and Diode Large Signal Parameters for Use in Automatic Circuit Analysis Programs

    Publication Year: 1965, Page(s):40 - 54
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2369 KB)

    The mathematical bases of the Ebers-Moll, Charge-Control and Linvill models are discussed in order to establish the parameter requirements and the accuracy of these models. A recovery technique for measuring those parameters associated with minority carrier storage in devices is described and typical values are given for several high frequency devices. Other parameters, such as current gain and ju... View full abstract»

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  • Generalized Model Analysis of Ionizing Radiation Effects in Semiconductor Devices

    Publication Year: 1965, Page(s):55 - 68
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1619 KB)

    The necessity of analyzing complex semiconductor device behavior in the radiation environment requires improved analytical methods for accurate representation. The purpose of this discussion is to present work done on the applicability of the Linvill lumped model in a generalized model analysis. The advantages of the lumped model technique include flexibility in detail of device representation (i.... View full abstract»

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  • High-Energy Radiation Damage in Silicon Transistors

    Publication Year: 1965, Page(s):69 - 77
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (889 KB)

    An experimental investigation of electron and gamma ray damage in silicon transistors is presented. At low values of fluence (¿e < 1014 electrons/cm2), loss in common-emitter dc current gain of medium frequency n-p-n planar transistors at collector currents of one to 10 milliamperes is attributed to changes in the surface recombination velocity. Displacement-induced recombination centers in the b... View full abstract»

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  • Displacement Damage in MOS Transistors

    Publication Year: 1965, Page(s):78 - 82
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    The changes in MOS device characteristics produced by neutron irradiation from the Northrop TRIGA reactor have been observed. Three damage mechanisms have been identified: an increase in net surface state density, a decrease in substrate resistivity, and a decrease in carrier mobility in the channel. The surface effect is usually dominant, although the bulk resistivity effect becomes increasingly ... View full abstract»

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  • Radiation Induced Regeneration through the P-N Junction Isolation in Monolithic I/C's

    Publication Year: 1965, Page(s):83 - 90
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2979 KB)

    Some monolithic integrated circuits have been found to display a regenerative interaction between substrate parasitics and the intended semiconductor circuit elements when exposed to ionizing radiation. One manifestation of this effect can result in a bi-stable operating condition which prevents proper integrated circuit functioning until the power source is reduced. Experimental and analytic meth... View full abstract»

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  • The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits

    Publication Year: 1965, Page(s):91 - 100
    Cited by:  Papers (50)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1370 KB)

    High levels of ionization can be created in semiconductor devices by irradiating the devices with short pulses of light. If the light frequency is properly selected, sufficient and relatively uniform energy deposition is obtained which results in ionization rates orders of magnitude above those presently attainable from other sources. It is shown that a pulsed-infrared laser can be used as a relat... View full abstract»

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  • Neutron and Gamma Sensitivities of Dynamic Detectors

    Publication Year: 1965, Page(s):101 - 111
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    The neutron and gamma sensitivities of nine detectors were studied in experiments performed at the Sandia Pulsed Reactor (SPR). Of the detectors tested, six are predominantly gamma detectors at the SPR and three produce a significant fraction of their total current due to the neutron flux during a normal SPR burst. None of the detectors studied were found to be predominantly sensitive to the neutr... View full abstract»

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  • Calculation of Electrical and Radiation Storage Time in Transistors

    Publication Year: 1965, Page(s):112 - 125
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3803 KB)

    The conventional viewpoint of saturation in junction transistors, from a device point of view, considers the excess minority carriers in the base region. A different viewpoint considers the majority carriers in the base. The important elements then are the number of these carriers stored in the transistor and whether they are stored in the active base region, the extrinsic base region, the collect... View full abstract»

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  • Effect of Operating Conditions and Transistor Parameters on Gain Degradation

    Publication Year: 1965, Page(s):126 - 133
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1286 KB)

    Data for predicting transistor gain degradation in a neutron radiation environment were obtained from experimental studies of the variation of the radiation damage constant KT as a function of temperature and current during both measurement and irradiation. Relatively small spreads in the values of KT were obtained when the individual base transit times were measured and the radiation exposures we... View full abstract»

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  • A Study of the Neutron-Induced Base Current Component in Silicon Transistors

    Publication Year: 1965, Page(s):134 - 146
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1399 KB)

    In a previous paper a neutron-induced component of base current was reported that increases in proportion to integrated neutron flux and varies with base-to-emitter voltage, VBE, as exp(q/nkT VBE), n being approximately 1.5. A component of base current which varies similarly with base-to-emitter voltage has previously been reported to be of surface-perimeter origin. For this reason it is significa... View full abstract»

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  • Some Properties of Conductivity Induced in Polystyrene by Pulsed Gamma Rays

    Publication Year: 1965, Page(s):147 - 154
    Cited by:  Papers (3)
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    First Page of the Article
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  • Conference Awards

    Publication Year: 1965, Page(s): 155
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  • Affiliate Plan of the IEEE Nuclear Science Group

    Publication Year: 1965, Page(s): 155-a
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA