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IEEE Transactions on Nuclear Science

Issue 5 • Date Nov. 1963

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Displaying Results 1 - 25 of 26
  • [Front cover]

    Publication Year: 1963, Page(s): c1
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    Freely Available from IEEE
  • IEEE Professional Technical Group on Nuclear Science

    Publication Year: 1963, Page(s): c2
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  • [Table of contents]

    Publication Year: 1963, Page(s): i
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  • From the Editor

    Publication Year: 1963, Page(s): iii
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  • The Nucleus

    Publication Year: 1963, Page(s):v - vi
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  • Radiation Effects in Diamond Lattice Semiconductors

    Publication Year: 1963, Page(s):1 - 10
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1816 KB)

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  • Mechanisms of Transient Radiation Effects

    Publication Year: 1963, Page(s):11 - 19
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1812 KB)

    Transient radiation effects are defined to be manifestations of electrons excited in materials, i. e., ionization effects. Manifestations of particular interest are the emission of secondary electrons from surfaces, conduction in ionized gases, semiconductors and insulators, and the emission and absorption of optical radiation by excess electrons. In each case the processes can be described as a s... View full abstract»

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  • Effects of Charged Particles and Neutrons on Magnetic Materials

    Publication Year: 1963, Page(s):20 - 27
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1426 KB)

    There is a growing interest in the effects of radiatio on the properties of magnetic materials, with greater activity abroad (on both sides of the Iro Curtain) than in the United States. While several of the papers are extensive in nature, reporting results on a variety of materials, the trend is toward more intensive investigations of selected materials, with the goal of identifylng more exactly ... View full abstract»

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  • The Effects of Gamma Radiation on Glass Coated Silicon Transistors

    Publication Year: 1963, Page(s):28 - 34
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    It has previously been found that semiconductor devices employing various gas encapsulation techniques exhibited significant alterations of their electrical responses under gamma and neutron exposure. Since the neutron bombardment produces bulk or volume damage, the device surface environment has little effect on the neutron induced changes. It has been observed that gamma exposures at doses well ... View full abstract»

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  • Surface Effects of Radiation on Transistors

    Publication Year: 1963, Page(s):35 - 44
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3276 KB)

    Surface effects caused by ionizing radiation have been found to result in serious parameter changes in certain transistors. These effects include large increases in leakage current, changes in gain, and increases in noise. Studies have been made of the effects of dose, dose rate, bias, transistor environment, and surface protection, in addition to the phenomena of recovery and memory. The greatest... View full abstract»

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  • Some Effects of Transit Gamma Radiation on Transistors

    Publication Year: 1963, Page(s):45 - 53
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3206 KB)

    As a part of a study of nuclear radiation effects on shipboard electronic equipment, a large number of commonly used transistor types have been irradiated in similated transit radiation fields. A wide range was observed in the amount of radiation induced effects on gain and reverse leakage current, even within a group of one type of transistor. In general, only temporary changes were observed, wit... View full abstract»

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  • Equivalence of Radiation Particles for Permanent Damage in Semiconductor Devices

    Publication Year: 1963, Page(s):54 - 59
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (731 KB)

    Selected transistors and diodes have been irradiated by various types and energies of dislocating radiation. Irradiation by protons of 10-Mev, neutrons of a reactor spectrum, electrons of 5, 10, and 25-Mev, gamma rays from cobalt-60, and bremsstrahlung from stopping of 5-Mev electrons are discussed. Passive and dynamic monitoring of permanent radiation damage was performed for exposures ranging fr... View full abstract»

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  • Radiation Studies on GaAs and Si Devices

    Publication Year: 1963, Page(s):60 - 65
    Cited by:  Papers (2)
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    GaAs and Si n/p cells were irradiated with 100 kev and 17.6 Mev protons, and 0.8 and 5.6 Mev electrons. The resulting difference in performance is interpreted in terms of the initial lifetime and the photo-absorption process. It is concluded that GaAs cells can deliver a given power longer than Si cells in a radiation field of high-energy protons and electrons. Thin shields will be required for bo... View full abstract»

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  • Low Energy Proton Damage to Solar Cells

    Publication Year: 1963, Page(s):66 - 70
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (629 KB)

    Various types of silicon solar cells have been irradiated with 4.6 - 4.8 Mev protons in two separate experiments. In the first experiment, variations included the bulk material, impurity concentration, and oxygen concentration; the second experiment involved the cells of various manufacturers. Changes in diffusion length, spectral response, and efficiency under sun-like illumination are presented.... View full abstract»

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  • Proton-Neutron Damage Equivalence in Si and Ge Semiconductors

    Publication Year: 1963, Page(s):71 - 86
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2718 KB)

    Following an analysis of the basic radiation damage processes in semiconductors, and an analysis of existing radiation effects data, a proton-neutron damage equivalence was experimentally determined for silicon solar cells. The basis for comparison is the degradation of minority carrier lifetime during irradiation, as expressed by the lifetime damage constant, K¿, or the diffusion length damage c... View full abstract»

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  • Effects of Simulated Transit Radiation on Digital Circuits

    Publication Year: 1963, Page(s):87 - 92
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    This paper describes results of tests made to determine the performance of digital computer circuits in a transit radiation environment. These tests were sponsored by the Bureau of Ships under direct cognizance of the Naval Radiological Defense Laboratory as part of a study of nuclear radiation effects on shipboard electronic equipment. The transit radiation is emitted by airborne weapon fission p... View full abstract»

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  • Radiation Tolerant Magnetic Amplifier

    Publication Year: 1963, Page(s):93 - 103
    Cited by:  Papers (2)
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    Several operational magnetic amplifier stages of low and medium power levels were designed and tested in a nuclear radiation environment to levels of 1 x 1016 neutrons/cm2 (E > 0.1 Mev) and were found to exhibit acceptable performance. Various diode characteristics were obtained under radiation to correlate behavior with amplifier designs. Diode test results are presented for irradiations at three... View full abstract»

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  • Design and Test of a Nuclear Radiation-Tolerant Servo Amplifier

    Publication Year: 1963, Page(s):104 - 109
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1036 KB)

    A servo amplifier was designed to meet the nuclear radiation environment expected in the nuclear ramjet missile. An extensive search of radiation effects data was made to Judiciously select radiation resistant components and materials. The resulting design used RCA nuvistor tubes for voltage amplification, and power amplification was achieved with G. E. ceramic tubes. The amplifier was instrumente... View full abstract»

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  • AN Experimental Investigation of Nuclear Radiation Effects on Radar Receiver Components

    Publication Year: 1963, Page(s):110 - 117
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2778 KB)

    Three ceramic tube 60-megacycle i-f amplifiers and one X-band mixer-preamplifier assembly were operated in the vicinity of a 3 megawatt nuclear reactor for a total of 300 megawatt hours, and their characteristics were monitored to determine the effects of nuclear radiation. There wrere essentially no changes in the characteristics of the i-f amplifiers throughout the test with a total integrated n... View full abstract»

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  • Gamma-Ray and Neutron-Induced Conductivity in Insulating Materials

    Publication Year: 1963, Page(s):118 - 130
    Cited by:  Papers (20)
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    Excess conductivities induced by steady-state sources of gamma rays and by pulsed sources of neutrons and gamma rays in polyethylene, polystyrene, polypropylene, Nylon, polyisobutylene (impregnated paper), mylar, Teflon, diallylphthalate, H-film, cellulose acetate, reconstituded mica, tantalum oxide, and an epoxy formulation have been measured. The measurements were made at steady-state gamma-ray ... View full abstract»

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  • Transient Conductivity in Capacitor Dielectrics for Gamma Radiation Pulses

    Publication Year: 1963, Page(s):131 - 138
    Cited by:  Papers (12)
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  • Pulsed Radiation Effects on Thyratron Tubes

    Publication Year: 1963, Page(s):139 - 148
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1682 KB)

    Thyratrons may be fired by intense pulses of nuclear radiation. The results of early experiments to characterize this phenomenon are reexamined in the light of the recent experimental results. Evidence is presented that the tube is fired by gas ionization rather than a radiation induced grid voltage transient. Plate voltage is observed to be an important determinant of the firing criteria. A signi... View full abstract»

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  • Charge-Control Equivalent Circuit for Predicting Transient Radiation Effects in Transistors

    Publication Year: 1963, Page(s):149 - 158
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1723 KB)

    A charge-control equivalent circuit is developed in detail which can be used with a computer to predict the time-dependent response of any transistor to a pulse of ionizing radiation. Operation of the equivalent circuit during saturation is also provided. Measurement procedures are described for each of the necessary parameters in the circuit and comparison with experimental flash X-ray data is pr... View full abstract»

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  • Evaluation and Compensation of Digital Switching Circuits in Transient Radiation Environments

    Publication Year: 1963, Page(s):159 - 167
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    A method for determining the degree of vulnerability of a general digital switching circuit to intense bursts of radiation is presented. Emphasis is placed upon the ability of the circuit to maintain a desired state, rather than on the switching process itself. The advantages and disadvantages of added compensation are discussed. Application is made of the preceding theory to contemporary circuits... View full abstract»

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  • Digital Computer Techniques for Determining Circuit Behavior in a Pulsed Nuclear Environment

    Publication Year: 1963, Page(s):168 - 176
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    Two digital computer circuit analysis programs which predict circuit response in a pulsed nuclear radiation environment are presented. One program requires that linear direct current equations be written manually and then programmed for computer solution. The other program generates the equations from topological circuit information and then solves the equations during the radiation burst automati... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA