Electron Devices, IEEE Transactions on
Issue 10 • Date Oct. 2007
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Table of contents
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IEEE Transactions on Electron Devices publication information
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Changes to the Editorial Board
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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
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Matrix-Addressable Micropixellated InGaN Light-Emitting Diodes With Uniform Emission and Increased Light Output
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Extended One-Dimensional Analysis to Effectively Derive Quantum Efficiency of Various CMOS Photodiodes
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off -State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown |
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Electrical Characteristics of Memory Devices With a High- k HfO2 Trapping Layer and Dual SiO2/Si3N4 Tunneling Layer
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PDF (736 KB)
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A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration
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PDF (999 KB)
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A Comprehensive Study of Cobalt Salicide-Induced SRAM Leakage for 90-nm CMOS Technology
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PDF (1070 KB)
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Effects of Al2O3 Dielectric Cap and Nitridation on Device Performance, Scalability, and Reliability for Advanced High- κ/Metal Gate pMOSFET Applications
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PDF (762 KB)
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HTMLAims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
