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IRE Transactions on Nuclear Science

Issue 1 • Date Jan. 1961

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Displaying Results 1 - 25 of 32
  • [Front cover]

    Publication Year: 1961, Page(s): c1
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  • IRE Professional Group on Nuclear Science

    Publication Year: 1961, Page(s): c2
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  • Table of contents

    Publication Year: 1961, Page(s): nil1
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  • Foreword

    Publication Year: 1961, Page(s): 1
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  • Introduction to Semiconductor Particle Detectors

    Publication Year: 1961, Page(s):2 - 10
    Cited by:  Papers (37)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1678 KB)

    This paper considers the physical processes which govern the operation of semiconductor particle detectors. It contains a discussion of: the production of hole-electron pairs by energetic particles in solids; the motion of the pairs under the influence of an electric field and in the presence of trapping and recombination; the current wave shape resulting from transport of these carriers; the prod... View full abstract»

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  • Experience at Harwell with Surface-Barrier Detectors

    Publication Year: 1961, Page(s):11 - 16
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    A simple and reliable technique for the construction of surface barrier detectors in silicon and germanium will be described. Results will be presented on their characteristics, sensitive depth, working life, and damage by radiation. Various structures of detector have been investigated, and their applications to nuclear physics will be discussed. View full abstract»

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  • Performance of Silicon Surface Barrier Detectors with Charge Sensitive Amplifiers

    Publication Year: 1961, Page(s):17 - 20
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (572 KB)

    Silicon surface barrier diode detectors of 1 cm2 and 25 mm2 sensitive area have given pulse height spectral resolutions of 17 kev and 13-¿ kev (FWHM) respectively, for 5.5 mev alpha particles. Reverse currents at 500 volts bias were less than 1 × 10-6 amps/cm2 with breakdown in excess of 1000 volts. A charge sensitive amplifier contributes 3-¿ and 10 kev noise (FWHM) with an input capacitive lo... View full abstract»

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  • High Resolution Study of Nuclear Reactions by p-n Junction Detecors

    Publication Year: 1961, Page(s):21 - 28
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1205 KB)

    The specific problems which arise from the use of p-n junctions for the detection of particles emitted in nuclear reactions are studied. The mechanism which allows the distinction between particles of different nature emitted in nuclear reactions like (d, p), (d,¿), (d, d) is explained. Behind the barrier there is a "diffusion zone" which furnishes a slow component to the pulse. Pulse shape selec... View full abstract»

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  • Improvements in Encapsulated Silicon Junction Alpha Detectors

    Publication Year: 1961, Page(s):29 - 34
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (713 KB)

    Encapsulated silicon junction alpha detectors made with material of resistivity 1000 ohm-cm and with front layer depth of 2 microns have been available for some time now in window areas of 5, 20, and 200 sq. mm. Recent measurements on the best of these units have given resolutions of 0.6%, 0.9% and 4% for 5.5 Mev alpha particles. For wider application, similar units have been made with front layer... View full abstract»

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  • Transistor Form of Nuclear Particle Detector

    Publication Year: 1961, Page(s):35 - 42
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1115 KB)

    A transistor form of nuclear particle detector has been fabricated using 20,000 ohm-cm p-type silicon. With such high resistivity silicon and a wafer 10 mils thick, a bias voltage of 30 to 40 volts extends the depletion layer almost completely through the wafer, leaving a thin p-region so that the whole wafer becomes a transistor. A particle entering the device through the collector depletion laye... View full abstract»

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  • N.I.P. Silicon Junctions Detectors

    Publication Year: 1961, Page(s):43 - 49
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    N.I.P. Silicon junctions have been studied as particle detectors. They consist of a 1.000 ¿¿.cm silicon plate on each side of which respectively a P and N layer have been diffused in order to have a NIP structure. The incident particles 9 to 40 MeV alpha, are parallel with the junctions planes, and strike the detector in the I region. An energy resolution of 2 % and a good linearity of pulse heigh... View full abstract»

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  • Semiconductor Electron Detectors

    Publication Year: 1961, Page(s):50 - 53
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (453 KB)

    The properties of p-n junctions made by phosphorus diffusion in 12 000 ¿ cm p-type silicon have been examined using the Chalk River ¿ ¿2 ß -ray spectrometer as a source of monoenergetic electrons. With 200 V reverse bias the depletion layer is thick enough to absorb totally 350 keV electrons. Up to 1200 keV some of the electrons are scattered sufficiently to deposit all their energy in the jun... View full abstract»

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  • Energy Spectra of Correlated Fragment Pairs from the Spontaneous Fission of CF252

    Publication Year: 1961, Page(s):54 - 58
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1873 KB)

    Silicon surface barrier counters have been used in conjunction with specially-designed low noise amplifiers to measure the energies of correlated fragment pairs from the spontaneous fission of Cf252. The silicon counters, ¿" × ¿" in size and prepared from 3600 ohm-cm material, exhibit rise times for fission pulses of a few nanoseconds; the pulse height resolution obtained for natural alpha part... View full abstract»

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  • The Application of Silicon Detectors to Alpha Particle Spectroscopy

    Publication Year: 1961, Page(s):59 - 63
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    The sensitivity for detection of low abundance groups in an alpha spectrum was found to be limited primarily by a low energy tail in the pulse height distribution. The effects of scattering and source preparation on the magnitude of this tail were experimentally investigated. A theoretical lower limit of sensitivity for low abundance groups was calculated from consideration of scattering processes... View full abstract»

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  • A Gold-Silicon Surface-Barrier Proton Range Telescope

    Publication Year: 1961, Page(s):64 - 72
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (958 KB)

    Of interest in cosmic-ray studies is the proton energy spectrum. The recent development of the Au-Si semiconductor particle detector affords a convenient means for studying the proton spectrum for low energies. The small size, stability, energy resolution, and relative insensitivity to ß- and ¿-radiation of these diodes suggest their usefulness as proton detectors on space vehicles. Gold-silicon... View full abstract»

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  • Application of Solid State Detectors to High Energy Physics

    Publication Year: 1961, Page(s):73 - 78
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (629 KB)

    All charged particles exhibit a minimum in their - dE/dX versus E behaviour. This minimum occurs at relativistic velocities, i.e. high energies, and corresponds to an energy loss of approximately 1.7 Mev gm-1 cm2 for all particles. The application of solid state detectors at high energies depends on obtaining good signals from these minimum ionizing events. Detectors for this application should be... View full abstract»

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  • Semiconductor Particle Counters at Low Temperatures

    Publication Year: 1961, Page(s):79 - 82
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1717 KB)

    Studies of the behavior of semiconductor surface-barrier counters have been made in the temperature range 0.2°K -300° K. A simple model which appears to describe the observed behavior is presented. Mountings suitable for low temperature applications are described. View full abstract»

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  • Nuclear Method of Measurement of Diffusion Length in P-N Junctions

    Publication Year: 1961, Page(s):83 - 90
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (588 KB)

    A P-N Germanium junction has been irradiated with 4,8 MeV, 6 MeV, 8,7 MeV alpha particles and 5 MeV , 10 MeV and 11 MeV protons ; the incident particles penetrate into the crystal perpendicularly to the Junction plane. The depletion region is 0,7 micron wide and is located at a distance of 5,3 ¿¿ from the crystal surface. The variation of the charge collection efficiency vs incident particle range... View full abstract»

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  • The Use of Surface-Barrier Diodes for Fast-Neutron Spectroscopy

    Publication Year: 1961, Page(s):91 - 97
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1398 KB)

    A neutron-sensitive semiconductor counter has ben constructed by depositing a thin layer of Li6F between two silicon surface-barrier counters. Neutrons are detected by observing the ¿ + T pair resulting from the Li6 (n, ¿)T reaction; pulses from the two counters are added and the sum pulse is amplified and recorded on a multi-channel analyzer. Since the sandwich geometry permits simultaneous det... View full abstract»

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  • Fast Neutron Damage to Silicon Junction Particle Detectors

    Publication Year: 1961, Page(s):98 - 102
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (666 KB)

    Two silicon junction charged-particle detectors were irradiated with fast neutrons distributed in energy from 1/2 to 6 Mev. Reverse current and pulse height spectra of U-234 ¿ particles were observed at several bias voltages as functions of neutron dosage. The reverse current of both detectors increased roughly five fold during exposure to 1.2 x 1013 fast neutrons per cm2. From the ¿ pulse heigh... View full abstract»

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  • dE/dx and E Semiconductor Detector Systems for 25-Mev He3 Alpha Particles

    Publication Year: 1961, Page(s):103 - 111
    Cited by:  Papers (2)
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    First Page of the Article
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  • The Effect of a High Radiation Environment on Gold-Silicon Charged Particle Detectors

    Publication Year: 1961, Page(s):112 - 115
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1100 KB)

    A study was conducted to determine the effect of a high radiation environment on the response of gold-silicon surface-barrier detectors to plutonium-239 alpha particles. The controlling damage was due to fast neutrons although the detectors were exposed to a mixed gamma-neutron field. After an exposure of 1000 rads the low energy side of the response peak showed a definite but broad secondary peak... View full abstract»

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  • Temperature Behavior of P-N Junction Detectors

    Publication Year: 1961, Page(s):116 - 123
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (570 KB)

    For practical considerations improved resolution together with higher operating limits can be realized for shallow-diffused junction detectors operated in the temperature range from approximately 0°C to - 70°C. Detectors used above 50°C will usually show large amounts of deterioration of resolution. Detector noise generally governs the resolution that may be achieved. It appears that noise may ... View full abstract»

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  • Homogeneous Solid State Ionization Detector

    Publication Year: 1961, Page(s):124 - 128
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (521 KB)

    A gold-doped silicon crystal was used to measure the most probable energy loss and energyloss distribution of ¿- mesons at 1.50 Bevç and 2.55 Bev/c. The crystal used was 2 cm in diameter and .25 cm thick. The preparation of the detector is discussed. The results confirm the existence of a density effect in the relations describing the dependence of the most probable energy loss on particle momen... View full abstract»

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  • Considerations in the Design of Pulse Amplifiers for Use with Solid State Radiation Detectors

    Publication Year: 1961, Page(s):129 - 139
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1211 KB)

    The definition of amplifier noise in terms of equivalent charge or equivalent electrons and the technique for its measurement in these terms is discussed in detail. Some of the theory which relates to the design of low noise, highly stable pulse amplifiers is reviewed. Tubes and other circuit elements suitable for use in low noise amplifiers are discussed. The effect of the pulse shaping networks ... View full abstract»

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Aims & Scope

This Transactions ceased production in 1962. The current retitled publication is IEEE Transactions on Nuclear Science.

Full Aims & Scope