Device and Materials Reliability, IEEE Transactions on
Issue 2 • Date June 2007
Society Sponsor
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[Front cover]
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PDF (293 KB)
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IEEE Transactions on Device and Materials Reliability publication information
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PDF (33 KB)
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Table of contents
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PDF (44 KB)
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Introduction to the Special Issue on 2006 International Integrated Reliability Workshop (IIRW)
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PDF (35 KB)
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Use of Resistance-Evolution Dynamics During Electromigration to Determine Activation Energy on Single Samples
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PDF (1343 KB)
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Constant-Current Stressing of SiCr-Based Thin-Film Resistors: Initial “Wearout” Investigation
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PDF (1366 KB)
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Constant-Current Wafer-Level Electromigration Test: Normalization of Data for Production Monitoring
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PDF (829 KB)
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A Quantitative Study of Endurance Characteristics and Its Temperature Dependance of Embedded Flash Memories With 2T-FNFN
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PDF (845 KB)
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Current Instability, Permittivity Variation With Frequency, and Their Relationship in Ta2O5 Capacitor
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PDF (367 KB)
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The Impact of Drift Implant and Layout Parameters on ESD Robustness for On-Chip ESD Protection Devices in 40-V CMOS Technology
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PDF (1376 KB)
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Nanoscale Bias-Annealing Effect in Postirradiated Thin Silicon Dioxide Films Observed by Conductive Atomic Force Microscopy
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PDF (214 KB)
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Theoretical and Experimental Thermal Analysis of InP Ridge Lasers on Submounts and TO Packages
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PDF (528 KB)
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HTMLAims & Scope
IEEE Transactions on Device and Materials Reliability provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture.
Meet Our Editors
Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.
