# Electronics Letters

## Filter Results

Displaying Results 1 - 25 of 32
• ### Titanium/magnesium double diffusion method for efficient fibre-LiNbO3 waveguide coupling

Publication Year: 1986, Page(s):881 - 882
Cited by:  Papers (6)
| |PDF (276 KB)

A new fibre-Ti: LiNbO3 waveguide coupling loss reduction method, which symmetrises the waveguide depth index profile by Mg diffusion after Ti-diffused waveguide formation, is proposed. A fibre-to-fibre total insertion loss of 0.5 dB for a 1 cm-long waveguide has been obtained using this method. View full abstract»

• ### Generalised stop-and-wait ARQ scheme with soft error detection

Publication Year: 1986, Page(s):882 - 883
Cited by:  Papers (4)
| |PDF (285 KB)

In the letter a generalised stop-and-wait ARQ technique with soft error detection is proposed which achieves a higher throughput efficiency with respect to other modified ARQ schemes recently described in the literature. An optimisation of the throughput efficiency is carried out to obtain a better performance. View full abstract»

• ### Integrated-optic polarisation convertor on (001)-InP substrate

Publication Year: 1986, Page(s):883 - 885
Cited by:  Papers (5)
| |PDF (403 KB)

A novel TE/TM convertor is proposed and demonstrated which is fabricated on (001)-InP substrate and can be integrated with TE-TM phase shifters to provide a general polarisation transformation. Some aspects of the technological realisation and first results are given; in a first attempt, a polarisation rotation of about 20 deg by 20 V could be demonstrated. View full abstract»

• ### Compensation of parasitic source capacitance in an FET differential amplifier

Publication Year: 1986, Page(s):885 - 886
| |PDF (366 KB)

The amplitude and phase responses and high-frequency stability of an FET differential amplifier can be improved by compensating the parasitic source capacitance with a small capacitor between the gate and source of the input FET. This provides a significant improvement in the performance of oscillators and tuned or wideband amplifiers. View full abstract»

• ### Half-micrometre-base lateral bipolar transistors made in thin silicon-on-insulator films

Publication Year: 1986, Page(s):886 - 887
Cited by:  Papers (10)
| |PDF (302 KB)

NPN and PNP lateral bipolar transistors having a base length shorter than 0.5 Â¿m have been made in thin (100 nm) silicon-on-insulator films. Current gains of 75 and 40 have been obtained in NPN and PNP devices, respectively. Measurements indicate a base generation lifetime of 1 Â¿s, and leakage currents of a fraction of a picoampere have been measured. The device fabrication is compatible with an... View full abstract»

• ### Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structure

Publication Year: 1986, Page(s):888 - 889
Cited by:  Papers (8)
| |PDF (287 KB)

Dispersions of field-induced variations in refractive index and absorption coefficient of a GaAs/AlGaAs quantum well structure are obtained with electroreflectance and transmission measurements at room temperature. The result indicates a possibility of an electroabsorption modulator without frequency chirping, operating at a particular wavelength near an excitonic gap. View full abstract»

• ### Locking bandwidth and relaxation oscillations of an injection-locked semiconductor laser

Publication Year: 1986, Page(s):889 - 890
Cited by:  Papers (3)
| |PDF (314 KB)

Detailed observations of an injection-locked semiconductor laser have allowed a verification of theoretical predictions for the locking bandwidth. In parallel, the fine structure of the intensity spectrum has been investigated and has revealed a strong modification of relaxation oscillation damping when locking is achieved. View full abstract»

• ### Schottky-barrier height of In0.43Al0.57As

Publication Year: 1986, Page(s):890 - 892
Cited by:  Papers (6)
| |PDF (473 KB)

The Schottky-barrier height of n-type In0 43Al0.57As grown by molecular-beam epitaxy on (100)-oriented n-type InP substrates measured by capacitance/voltage and internal photoemission measurements is Â¿Bn = 1.2 Â± 0.1 eV, comparable to that of AlAs and substantially larger than that of In0.52Al0.48As. View full abstract»

• ### Low-loss antiresonant reflecting optical waveguide on Si substrate in visible-wavelength region

Publication Year: 1986, Page(s):892 - 893
Cited by:  Papers (17)
| |PDF (293 KB)

A low-loss (0.3 dB/cm) antiresonant reflecting optical waveguide on an Si substrate was realised at 0.633 Â¿m wavelength by employing a TiO2/SiO2 interference reflector instead of an Si/SiO2 pair used in the long-wavelength range. View full abstract»

• ### GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk

Publication Year: 1986, Page(s):893 - 894
Cited by:  Papers (1)
| |PDF (355 KB)

The letter focuses on the measurement of speed and crosstalk characteristics of a photoreceiver array which is composed of metal-semiconductor-metal (MSM) photodiodes and metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a semi-insulating (SI) GaAs substrate. We have obtained excellent eye diagrams at 2 Gbit/s, NRZ, and little crosstalk between nearest-neighbour c... View full abstract»

• ### Dispersion on the effective dielectric constants of asymmetrical coupled microstriplines

Publication Year: 1986, Page(s):894 - 896
| |PDF (490 KB)

The transverse modal analysis of dispersion on the effective dielectric constants of asymmetrical coupled microstriplines is presented. Based on this analysis, the effective dielectric coonstants for the c- and Â¿-modes are calculated. Results are compared with those in the open literature. View full abstract»

• ### a-Si:H Schottky gate on n-GaInAs

Publication Year: 1986, Page(s):896 - 898
Cited by:  Papers (4)
| |PDF (450 KB)

The metal Schottky contact leads to low barrier heights on small-gap (<1 eV) semiconductors. This is the case of the n-type GaInAs material matched to InP where this barrier does not exceed 0.3 eV. We have found an original method to improve this result considerably by using a deposition of an amorphous semiconductor a-Si or a-Si: H. A Pt metal acts as the Schottky contact on the amorphous laye... View full abstract»

• ### Electromagnetic response of a thin layer

Publication Year: 1986, Page(s):898 - 899
| |PDF (320 KB)

The detectability of a thin layer within a stratified medium is considered. The two limiting cases of a resistive and a conductive sheet are discussed for both TM (transverse magnetic) and TE (transverse electric) excitation. It is shown that the resistive sheet is only visibleÂ¿ for the TM excitation. View full abstract»

• ### Optical reconfiguration of electrical networks

Publication Year: 1986, Page(s):899 - 900
| |PDF (329 KB)

The temporary modification of electrical networks on a sub-nanosecond time scale via photoconductive gating of circuit components is reported. Frequency agility and amplitude-shifting of VHF signals, as well as enhanced tunability of transient wave shapes, have been demonstrated. The signals generated are applicable to fusion, communications and radar studies, perhaps up to the millimetre- and sub... View full abstract»

• ### Crosstalk in optical amplifiers for two-channel transmission

Publication Year: 1986, Page(s):900 - 902
Cited by:  Papers (24)
| |PDF (462 KB)

Optical amplifiers for two-channel transmission are investigated. Intensity modulation in one channel causes crosstalk in the other channel via the change of the complex refractive index in the amplifier. The amount of crosstalk is connected with the linewidth enhancement factor Â¿. View full abstract»

• ### Towards a more accurate method of predicting the distribution of multipath fading on terrestrial microwave links

Publication Year: 1986, Page(s):902 - 903
Cited by:  Papers (1)
| |PDF (331 KB)

Initial work is described towards the development of a more accurate asymptotic prediction method for the high fade depth range of the fading distribution on line-of-sight terrestrial microwave links. The influence of parameters such as path length, frequency, terrain roughness, path inclination, antenna beamwidth and path clearance is analysed using multipath fading data from a large number of li... View full abstract»

• ### Simulation of handover conditions for cellular radio systems

Publication Year: 1986, Page(s):904 - 905
| |PDF (281 KB)

A computer model has been used to study the effects of handover in a cellular radio system. Three parameters are used to represent the radio propagation conditions including fading, which can give rise to multiple handovers on a single crossing of the cell boundary. Means for reducing unnecessary handovers are discussed. View full abstract»

• ### High-speed zero-bias waveguide photodetectors

Publication Year: 1986, Page(s):905 - 906
Cited by:  Papers (27)
| |PDF (336 KB)

We describe an InGaAsP waveguide PIN photodetector that (unlike conventional PINs) provides for light absorption perpendicular to current collection, a feature that results in high-speed, high-efficiency and relatively bias-insensitive operation. Our uncoated, packaged device has displayed impulse response of 40 ps (Tektronix S-4 sampling head) and efficiency of 25% at zero bias. View full abstract»

• ### Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio

Publication Year: 1986, Page(s):907 - 908
Cited by:  Papers (8)
| |PDF (348 KB)

Large on/off ratio optical modulation of long-wavelength light propagating along the plane of InGaAs/InAlAs multiple-quantum-well (MQW) structures grown by molecular beam epitaxy (MBE) is obtained for the first time. These waveguide MQW optical modulators have a modulation on/off ratio of 30:1 (15 dB) at a driving voltage as low as 9 V, and a capacitance-limited pulse response of 280 ps (FWHM). Th... View full abstract»

• ### General proof of phase relation between an m-sequence and its sampled sequence

Publication Year: 1986, Page(s):908 - 909
| |PDF (220 KB)

A general proof of the phase relation between an m-sequence and its sampled sequence is given for the sampling interval s=2i(iÂ¿1). View full abstract»

• ### Uniformity factor of a compact range using dual parabolic cylindrical reflectors

Publication Year: 1986, Page(s):909 - 911
Cited by:  Papers (2)
| |PDF (342 KB)

For a dual parabolic cylindrical reflector configuration employed as a compact range, a uniformity factor is defined to indicate the uniformity of the aperture field. The effects of the reflector geometrical parameters on this uniformity factor are studied and some representative results are presented. View full abstract»

• ### Acquisition of pseudonoise signals using additive feedback

Publication Year: 1986, Page(s):911 - 912
| |PDF (290 KB)

A new closed-loop acquistion system for maximal-length pseudorandom codes is described. This system provides reduced acquisition times compared to steppedÂ¿ correlation and sequential estimation techniques, down to Â¿20 dB signal/noise ratio. View full abstract»

• ### Quantifying loss minimisation in single-mode fibre tapers

Publication Year: 1986, Page(s):912 - 914
Cited by:  Papers (15)
| |PDF (424 KB)

The reduction of excess loss in practical single-mode fibre tapers requires the local taper angle to be smaller than an intuitive value. This qualitative criterion is quantified for various taper shapes. For a given taper length, loss is minimal for shapes which are similar to the shape obtained by assuming the intuitive value of angle everywhere along the taper. View full abstract»

• ### Joint analysis of duration and rate of change of rain attenuation at 11.6 GHz

Publication Year: 1986, Page(s):914 - 915
Cited by:  Papers (3)
| |PDF (306 KB)

Positive and negative rates of change of attenuation are studied jointly with the in-between fade duration using Sirio 11.6 GHz beacon four-year data for several attenuation thresholds, collected in northern Italy. The letter shows that the rate conditional distributions are log-normal, and that little correlation exists between negative and positive rates and durations. View full abstract»

• ### Performance bounds of rate-1/2 convolutional codes with QPSK on Rayleigh fading channel

Publication Year: 1986, Page(s):915 - 917
Cited by:  Papers (3)
| |PDF (446 KB)

An analytic expression for the bit error probability upper bounds of rate-1/2 convolutional codes in conjunction with QPSK modulation and maximum-likelihood Viterbi decoding on the fully interleaved Rayleigh fading channel is presented. The given expression is evaluated numerically for selected rate-1/2 optimum convolutional codes together with QPSK. View full abstract»

## Aims & Scope

Electronics Letters is internationally renowned for its rapid communication of new developments and emerging topics across the broad and interdisciplinary field of modern electronics and electrical engineering.

Full Aims & Scope

## Meet Our Editors

Editors-in-Chief

Professor Chris Toumazou
Director of the Biomedical Institute
Imperial College, London, UK

Professor Ian White