Electron Devices, IEEE Transactions on
Issue 7 • Date July 2007
Society Sponsor
Filter Results
Displaying Results 1 - 25 of 40
-
Table of contents
|
PDF (53 KB)
-
IEEE Transactions on Electron Devices publication information
|
PDF (60 KB)
-
Evolution of Space Traveling-Wave Tube Amplifier Requirements and Specifications for Modern Communication Satellites
|
PDF (978 KB)
-
-
-
A δ-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement
|
PDF (1124 KB)
-
A 200-GHz True E-Mode Low-Noise MHEMT
|
PDF (798 KB)
-
-
-
Organic–Inorganic Hybrid Optical Upconverter
|
PDF (299 KB)
-
Monolithic Integration of InP HBTs and Uni-Traveling-Carrier Photodiodes Using Nonselective Regrowth
|
PDF (740 KB)
-
-
-
-
Highly Scalable Embedded Flash Memory With Deep Trench Isolation and Novel Buried Bitline Integration for the 90-nm Node and Beyond
|
PDF (833 KB)
-
Physical Understanding of Gate-Depletion Phenomena in Poly-Si/HfSiON Stacks Based on C–V Differentiation Analysis
|
PDF (366 KB)
-
Electro-Thermally Coupled Power Optimization for Future Transistors and Its Applications
|
PDF (1207 KB)
-
Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF
|
PDF (433 KB)
-
-
-
-
-
-
-
HTMLAims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
