By Topic

# Electronics Letters

## Filter Results

Displaying Results 1 - 25 of 30
• ### Semiconductor surface studies with SAW-oscillator structures

Publication Year: 1982, Page(s):1065 - 1066
Cited by:  Papers (1)
| | PDF (239 KB)

A new method is described whereby the surface charge against surface potential of an oxidised semiconductor sample can be obtained by measuring the frequency shift of a SAW delay-line oscillator. In this method a direct voltage is applied across the semiconductor with different configurations. The SAW delay line is made on LiNbO3 and is designed to oscillate (at 100 MHz) with a wideband amplifier ... View full abstract»

• ### Diode-laser-controlled millimetre-wave propagation in a silicon waveguide

Publication Year: 1982, Page(s):1066 - 1067
Cited by:  Papers (2)
| | PDF (292 KB)

We report the dynamic behaviour of the phase shift and attenuation of millimetre waves in a silicon waveguide when it is illuminated by a diode laser. The effect of diffusion of the induced plasma on the phase shift and attenuation is also described. View full abstract»

• ### Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode

Publication Year: 1982, Page(s):1067 - 1069
Cited by:  Papers (1)
| | PDF (439 KB)

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1Â¿xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers. View full abstract»

• ### Multidimensional bilinear transformations

Publication Year: 1982, Page(s):1069 - 1070
Cited by:  Papers (4)
| | PDF (230 KB)

The bilinear transformation is extended to transform multi-variable polynomials, using discrete convolution and the Kronecker product. This approach is very simple, easy for computer implementation, and useful in complex curve fitting and stability studies of discrete systems and the design of digital filters etc. View full abstract»

• ### Outage prediction of digital radio systems

Publication Year: 1982, Page(s):1071 - 1072
Cited by:  Papers (11)
| | PDF (302 KB)

It is well established that the performance of digital radio systems is often limited by the amplitude and group delay distortions which accompany frequency selective fading, and the concept of the system signatureÂ¿ has been developed for predicting the outage probability of such systems. The letter presents a new outage prediction technique and introduces the concept of a normalised system sig... View full abstract»

• ### Proposed use of rearrangement in multiexchange telecommunication networks

Publication Year: 1982, Page(s):1072 - 1073
Cited by:  Papers (1)
| | PDF (306 KB)

Rearrangement of connections can eliminate blocking in switching networks in exchanges. It is proposed to apply this principle to trunks in multiexchange networks. It is shown for two simple networks that rearrangement eliminates blocking and provides a better grade of service than conventional automatic alternative routing. In more complex networks, rearrangement should enable fewer trunks to be ... View full abstract»

• ### Analytical and simulation study of simple rearrangeable multiexchange networks

Publication Year: 1982, Page(s):1073 - 1075
Cited by:  Papers (1)
| | PDF (424 KB)

Congestion probabilities for calls in simple three-exchange networks operated with and without rearrangements are determined analytically and by digital simulation. Load-loss curves are obtained, from which the gain in traffic capacity due to rearrangement and degradation due to overload can be found. It is concluded that routing control with rearrangements possesses a potential traffic-handling a... View full abstract»

• ### Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection

Publication Year: 1982, Page(s):1075 - 1076
| | PDF (326 KB)

The photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes were changed by forward bias carrier injection for several hours. These changes were similar to photoinduced (PI) changes previously reported, and this result supports previous explanations for PI changes. The differences between these two types of change are also discussed. View full abstract»

• ### High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE

Publication Year: 1982, Page(s):1076 - 1078
| | PDF (479 KB)

We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2VÂ¿1sÂ¿1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 Ã 1011 cmÂ¿2 and 1.5 Ã 1012 cmÂ¿2 by changing the `spacerÂ¿ thickness and the doping level in the n-type GaAlAs. View full abstract»

• ### Electronic erasure of stored reference signals in a metal-ZnO-SiO2-Si induced junction storage correlator

Publication Year: 1982, Page(s):1078 - 1080
| | PDF (511 KB)

The surface-acoustic-wave storage correlator is used to store a reference signal for subsequent correlation with an unknown signal. We describe and demonstrate a method for the electronic erasure of stored signals in the context of the MZOS-induced junction storage correlator. View full abstract»

• ### Novel active-compensated variable-phase inverting integrator

Publication Year: 1982, Page(s):1080 - 1081
| | PDF (211 KB)

A novel variable-phase inverting integrator is presented. Compared to some existing circuits, the circuit proposed has better high-frequency behaviour because it does not require the use of identical amplifiers. This integrator can considerably extend the useful frequency range of the two-integrator-loop and multiple-feedback active filters, reducing excess phase shift of the operational amplifier... View full abstract»

• ### Pseudoheterodyne detection scheme for optical interferometers

Publication Year: 1982, Page(s):1081 - 1083
Cited by:  Papers (39)
| | PDF (520 KB)

A heterodyne signal recovery scheme for interferometric sensors based on frequency ramping of the laser diode source is described. Using a PLL detector, signals in the range 10Â¿4 to 6 rad have been recovered, the system being linear over 5 decades. View full abstract»

• ### Contact resistance of polysilicon silicon interconnections

Publication Year: 1982, Page(s):1083 - 1085
Cited by:  Papers (5)
| | PDF (579 KB)

Electrical contacts to poly are an important part of current silicon technology. In this letter we present a method of calculating the electrical characteristics for a planar poly to silicon contact. An interesting and significant result that is derived and discussed is a minimum contact resistance that is a strong function not only of the specific contact resistance of the contact interface but a... View full abstract»

• ### T-emitter bipolar power transistor with negative-temperature-gradient current gain

Publication Year: 1982, Page(s):1085 - 1087
| | PDF (370 KB)

A PNP epitaxial-base power transistor with double diffused emitter (T-emitter) which exhibits a negative temperature gradient for Ã is described. Qualitative analysis shows that a fall-off in Ã with increase in temperature is a consequence of both the T-emitter geometry and the boron double diffused emitter area. Measurements on realised transistors give a mean value of dÃ/dt of Â¿0.25 at tempe... View full abstract»

Publication Year: 1982, Page(s):1087 - 1089
Cited by:  Papers (11)
| | PDF (335 KB)

Realising SC biquads with high Q values normally results in a high capacitor spread. This means, for MOS circuits, a correspondingly large increase of the total chip area. In the letter, we describe a circuit that allows the realisation of high-Q filters with a minimum capacitor spread resulting in more accurate capacitor ratios and a small overall chip area. View full abstract»

• ### Novel technique for antenna gain measurement in satellite Earth stations

Publication Year: 1982, Page(s):1089 - 1090
| | PDF (270 KB)

A novel technique is proposed for the measurement of the gain of antennas used in Earth stations involved in satellite communications. In principle the technique requires a standard-gain reference antenna, automatic level control over a satellite loop, and narrowband detection techniques. Advantages over conventional techniques (line-of-sight or radio star measurement) are claimed including stable... View full abstract»

• ### Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride

Publication Year: 1982, Page(s):1090 - 1092
Cited by:  Papers (1)
| | PDF (452 KB)

Hall-effect measurements on p-type MCT implanted with 1 Ã 1014 B+/cm2 at 150 keV show that an abrupt junction is formed at a depth of 0.6 Â± 0.12 Â¿m after annealing at 230Â° for 7 min with a ZnS cap. Prior to the anneal the carrier profile was graded and extended to a depth of 5.0 Â± 1.0 Â¿m. Photodiodes have been formed by a dual implant of 5 Ã 1014 B+/cm2 at 100 keV and 50 keV, and after anne... View full abstract»

• ### Simple spectral control technique for external cavity laser transmitters

Publication Year: 1982, Page(s):1092 - 1094
Cited by:  Papers (8)
| | PDF (439 KB)

An active control technique which can be used to maintain an external cavity laser transmitter in a single longitudinal mode is described. The circuitry is contained in a single integrated circuit and provides mean power control of the laser output in addition to spectral control. Single-mode operation has been demonstrated over a temperature range of 25Â°C. View full abstract»

• ### Evidence of detrimental surface effects on GaAs power MESFETs

Publication Year: 1982, Page(s):1094 - 1095
Cited by:  Papers (7)
| | PDF (305 KB)

GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects. View full abstract»

• ### Low-threshold single quantum well (60 Ã) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant

Publication Year: 1982, Page(s):1095 - 1097
Cited by:  Papers (8)
| | PDF (602 KB)

The letter reports low-threshold MO-CVD GaAlAs DH (~7730 Ã) lasers containing Mg as the p-type dopant. The structure consists of symmetric stepped index cladding layers on both sides of a thin single quantum well (~60 Ã) active region. Broad-area threshold current densities of 460 A cmÂ¿2 and 270 A cmÂ¿2 are achieved for cavity lengths of 250 and 500 Â¿m, respectively. Broad-area room-temperatur... View full abstract»

• ### High-efficiency GaAs power MESFETs prepared by ion implantation

Publication Year: 1982, Page(s):1097 - 1099
Cited by:  Papers (5)
| | PDF (644 KB)

GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 Â¿m gate length by 2400 Â¿m gate width device has demonstrated an output power of 1.63 W with 6.9 dB associated gain, 35% power-added efficiency and 9.7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power ... View full abstract»

• ### Analogue-to-digital conversion using integrated electro-optic interferometers

Publication Year: 1982, Page(s):1099 - 1100
Cited by:  Papers (2)
| | PDF (299 KB)

The design, fabrication and performance of integrated electro-optic Mach-Zehnder interferometers is described. Operation of a 4-bit analogue-to-digital convertor comprising an array of interferometers with an integral optical input distributor has been demonstrated. Good high-frequency performance is indicated by the results of signal/noise measurements on the output signal. View full abstract»

• ### Novel architecture for a time division switch

Publication Year: 1982, Page(s):1100 - 1101
Cited by:  Papers (2)
| | PDF (323 KB)

A layout for a single-chip implementation of a time switch for a digital switching system is described. Using only a few simple cell types, a complete switch can be designed by connecting the cells in regular arrays. Interconnect wiring is incorporated into the cells, so the effort required to design a time switch of any size is minimised. View full abstract»

• ### Exact design of switched-capacitor bandpass ladder filters

Publication Year: 1982, Page(s):1101 - 1103
Cited by:  Papers (5)
| | PDF (395 KB)

An exact design of switched-capacitor bandpass filters is presented. This new technique is based on the distributed circuit theory with a suitable bandpass transformation. The theoretical aspects of this method are given as well as the simulated results using a switched-capacitor circuit-analysis program. View full abstract»

• ### First measurement of a superconducting microstrip-line attenuation constant at 10 GHz

Publication Year: 1982, Page(s):1103 - 1105
| | PDF (534 KB)

An Nb/Nb2O5/PbInAu microstrip resonator of 0.4 Â¿m di-electric height at 10 GHz and 4.2 K exhibited an unloaded Q of 257 with a measurement uncertainty of Â±5%. This confirms the conductor losses calculated according to the Mattis-Bardeen theory. The dielectric loss factor of Nb2O5 at 10 GHz and 4.2 K is also confirmed by this measurement to be as in the subgigahertz range, namely 2.1 Ã 10Â¿3. View full abstract»

## Aims & Scope

Electronics Letters is internationally renowned for its rapid communication of new developments and emerging topics across the broad and interdisciplinary field of modern electronics and electrical engineering.

Full Aims & Scope

## Meet Our Editors

Editors-in-Chief

Professor Chris Toumazou
Director of the Biomedical Institute
Imperial College, London, UK

Professor Ian White