Electron Device Letters, IEEE
Issue 5 • Date May 2007
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Displaying Results 1 - 25 of 49
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Table of contents
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PDF (55 KB)
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IEEE Electron Device Letters publication information
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PDF (59 KB)
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Changes in the Editorial Board
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PDF (15 KB)
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High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits
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PDF (312 KB)
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Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors
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PDF (323 KB)
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A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis
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PDF (302 KB)
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Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes
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PDF (255 KB)
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Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High-
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PDF (208 KB)
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Charge Trapping and TDDB Characteristics of Ultrathin MOCVD
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PDF (427 KB)
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Impacts of Notched-Gate Structure on Contact Etch Stop Layer (CESL) Stressed 90-nm nMOSFET
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PDF (429 KB)
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Performance Improvement of Organic Thin-Film Transistors by Electrode/Pentacene Interface Treatment Using a Hydrogen Plasma
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PDF (457 KB)
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A Reliability Model for Low-Temperature Polycrystalline Silicon Thin-Film Transistors
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PDF (421 KB)
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Demonstration of Long-Pulse Power Amplification at 1 GHz Using 4H-SiC RF BJTs on a Conductive Substrate
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PDF (183 KB)
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Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE
