Issue 9 • Date Sep 1992
Filter Results
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Effective mass and mobility of holes in strained Si1-xGe x layers on (001) Si1-yGey substrate
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PDF (1052 KB)
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Transmission-line amplifiers
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PDF (632 KB)
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Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFETs
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PDF (512 KB)
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1/
f noise reduction in self-aligned AlGaAs/GaAs HBT with AlGaAs surface passivation layer
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PDF (276 KB)
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Study of the growth temperature dependence of performance and reliability of thin MOS gate oxides
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PDF (792 KB)
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50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
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PDF (700 KB)
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Low-power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET
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PDF (560 KB)
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A numerical study of performance potential of Si1-xGe x pseudomorphic heterojunction bipolar transistors
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PDF (612 KB)
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Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors
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PDF (768 KB)
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Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristics
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PDF (288 KB)
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Genuine wide-bandgap microcrystalline emitter Si-HBT with enhanced current gain by suppressing homocrystallization
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PDF (632 KB)
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A simple physical model including velocity overshoot for n-channel heterostructure FETs
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PDF (228 KB)
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DC characteristics of submicrometer CMOS inverters operating over the whole temperature range of 4.2-300 K
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PDF (300 KB)
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Micromotor fabrication
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PDF (1084 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


