# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 36
• ### Numerical analysis of the photoeffects in GaAs MESFET's

Publication Year: 1992, Page(s):1564 - 1570
Cited by:  Papers (10)
| | PDF (516 KB)

The photoeffects on the I-V characteristics of GaAs MESFETs have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field... View full abstract»

• ### Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

Publication Year: 1992, Page(s):1607 - 1613
Cited by:  Papers (59)  |  Patents (2)
| | PDF (764 KB)

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (... View full abstract»

• ### A standard-television compatible 648×487 pixel Schottky-barrier infrared CCD image sensor

Publication Year: 1992, Page(s):1633 - 1637
Cited by:  Papers (10)  |  Patents (1)
| | PDF (524 KB)

Describes a 648×487 pixel PtSi Schottky-barrier infrared CCD image sensor. Due to the development of the modified inverted-LOCOS process, which can minimize dead regions, and the two-dopant concentration structure, which achieves both a large charge capability and high transfer efficiency, a 40% fill factor in a 21-μm×21-μm pixel and a 0.1-K noise equivalent temperature differenc... View full abstract»

• ### Monte Carlo analysis of the space-charge effect in AlGaAs/GaAs ballistic collection transistors (BCTs) under high current injection

Publication Year: 1992, Page(s):1558 - 1563
Cited by:  Papers (10)
| | PDF (540 KB)

AlGaAs/GaAs ballistic collection transistors (BCTs) are investigated by self-consistent Monte Carlo simulation, focusing on the space-charge effect in the collector region. In addition to the conventional BCT collector structure (i-p+-n+), modified collector structures which have n--p+-n + and p--p+-n+ doping p... View full abstract»

• ### A new analytical model for gated turn-off of thyristors

Publication Year: 1992, Page(s):1752 - 1757
Cited by:  Papers (5)
| | PDF (484 KB)

A two-dimensional analytical model is developed to explain the storage phase of the turn-off mechanism in a gate turn-off thyristor. An expression is obtained from first principles for the position of the on' region plasma edge as a function of time, assuming a negative ramp for the gate current. The model contains no fitting parameters and addresses realistic issues such as high-injection effect... View full abstract»

• ### A nonrecessed-base, self-aligned bipolar structure with selectively deposited polysilicon emitter

Publication Year: 1992, Page(s):1711 - 1716
Cited by:  Papers (3)
| | PDF (660 KB)

A self-aligned bipolar structure, which features a nonrecessed base and a selectively deposited polysilicon emitter, is proposed. The in situ surface cleaning process prior to the selective-polysilicon deposition minimizes the residual native oxide in the emitter window. Both high-quality selective-polysilicon film and well-behaved submicrometer bipolar device characteristics have been obtained fo... View full abstract»

• ### Simulation of elevated temperature aluminum metallization using SIMBAD

Publication Year: 1992, Page(s):1599 - 1606
Cited by:  Papers (36)  |  Patents (1)
| | PDF (716 KB)

A ballistic deposition model, SIMBAD, has been extended to simulate physical vapor deposition onto substrates at elevated temperatures. The model has been expanded to account for the effect of film curvature on surface diffusion. The effects on via coverage and filling have been simulated for aluminum films, and complete planarization of a 1:1 aspect ratio via is predicted for a temperature of 550... View full abstract»

• ### Hot-carrier stress damage in the gate off' state in n-channel transistors

Publication Year: 1992, Page(s):1774 - 1776
Cited by:  Papers (10)
| | PDF (264 KB)

Hot-carrier damage in the `of' state (Vg⩽ Vt while Vd is high, V g(off)) in silicon n-MOS transistors is examined. This condition commonly occurs due to capacitively coupled noise at the input of a CMOS inverter. It is shown that damage can occur under these conditions in the form of oxide trapped charge. Contrary ... View full abstract»

• ### Analysis of the small-signal voltage decay technique in the characterization of Si concentrator solar cells

Publication Year: 1992, Page(s):1622 - 1632
Cited by:  Papers (3)
| | PDF (920 KB)

Detailed analyses of the small-signal voltage decay (SSVD) method of lifetime measurement have been performed. The main difficulty in voltage decay techniques is that the boundary conditions at the junction are coupled. A solution to the time-dependent diffusion equations has been obtained using the quasi-static emitter (QSE) approximation. Assuming a power-law emitter doping profile, a solution t... View full abstract»

• ### High-temperature electrical characteristics of GaAs MESFETs (25-400°C)

Publication Year: 1992, Page(s):1551 - 1557
Cited by:  Papers (49)
| | PDF (608 KB)

The effects of elevated ambient and substrate temperatures (25°C up to 400°C) on the electrical characteristics of integrated GaAs MESFETs in a state-of-the-art commercial technology are reported. The focus is on the large- and small-signal parameters of the transistors. The existence of zero-temperature-coefficient drain currents is demonstrated analytically and experimentally for enhance... View full abstract»

• ### A quantitative physical model for the band-to-band tunneling-induced substrate hot electron injection in MOS devices

Publication Year: 1992, Page(s):1646 - 1651
Cited by:  Papers (11)  |  Patents (11)
| | PDF (508 KB)

A quantitative physical model for band-to-band tunneling-induced substrate hot electron (BBISHE) injection in heavily doped n-channel MOSFETs is presented. In BBISHE injection, the injected substrate hot electrons across the gate oxide are generated by impact ionization by the energetic holes which are left behind by the tunneling electrons and become energetic when traveling across the surface hi... View full abstract»

• ### Design of an electron gun for a 280 GHz induced-resonance-electron-cyclotron (IREC) maser experiment

Publication Year: 1992, Page(s):1763 - 1767
Cited by:  Papers (3)
| | PDF (432 KB)

A thermionic electron gun capable of generating a high-quality annular electron beam for quasi-optical CARM and induced-resonance-electron-cyclotron (IREC) maser applications has been designed. The 500 kV, 200 A MIG-type electron gun has a curved emitting surface designed to compensate for radial electric field gradients across the cathode, and should produce an electron beam with ν⊥<... View full abstract»

• ### Quantum-mechanical modeling of accumulation layers in MOS structure

Publication Year: 1992, Page(s):1732 - 1739
Cited by:  Papers (76)  |  Patents (1)
| | PDF (684 KB)

An original method is used for the quantum-mechanical modeling of n-type silicon accumulation layers. Unlike previous methods, which were only valid near 4.2 K, the approach is valid up to room temperature and beyond. The self-consistent results obtained are compared with those of the standard classical model for the accumulation layer, and the differences between them are found to be relevant for... View full abstract»

• ### Static properties of the superconducting FET: Numerical analysis

Publication Year: 1992, Page(s):1661 - 1668
Cited by:  Papers (6)  |  Patents (1)
| | PDF (548 KB)

A study of the feasibility of the superconducting FET using the high-Tc superconductors. Static properties are calculated using an equivalent circuit model. All superconductors are assumed to behave like BCS superconductors. The proximity effect is introduced from the phenomenological equation. Although the Schottky barrier effect at the superconductor-semiconductor interface i... View full abstract»

• ### A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique

Publication Year: 1992, Page(s):1747 - 1751
Cited by:  Papers (5)
| | PDF (400 KB)

For pt.I see ibid., vol.39, no.7, p.1740-46 (1992). A bias-scan deep-level transient spectroscopy (DLTS) method for measuring interface states in a semiconductor-insulator-semiconductor (SIS) capacitor structure is described. Introducing a charge coupling factor between the film/oxide (F/O) and the substrate/oxide (S/O) interfaces made it possible to extract interface trap densities from the measu... View full abstract»

• ### Scaling the Si MOSFET: from bulk to SOI to bulk

Publication Year: 1992, Page(s):1704 - 1710
Cited by:  Papers (448)  |  Patents (138)
| | PDF (576 KB)

Scaling the Si MOSFET is reconsidered. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to an undesirably large junction capacitance and degraded mobility. By studying the scaling of fully depleted SOI devices, the important concept of controlling horizontal leakage through vert... View full abstract»

• ### Efficient light scattering modeling for alignment, metrology, and resist exposure in photolithography

Publication Year: 1992, Page(s):1588 - 1598
Cited by:  Papers (15)
| | PDF (840 KB)

In previous work, a two-dimensional waveguide model has been developed and examined extensively so that rigorous light scattering calculations for photolithography-related processes, such as stepper alignment, linewidth and overlay measurements, and resist bleaching, can be performed. The computation, however, is expensive if the wafer topography involved is complicated or if resist bleaching prob... View full abstract»

• ### Space-charge effects in ballistic injection across heterojunctions [FETs]

Publication Year: 1992, Page(s):1780 - 1782
| | PDF (264 KB)

Conditions under which ballistic injection across heterojunctions is suppressed in unipolar FET devices have been examined using two-dimensional Monte Carlo simulation. Gate-induced lateral space charges influence via macroscopic current continuity the dipole layer at the heterojunction. A retarding dipole layer is shown to result in ballistic electron fractions and transit times comparable to tho... View full abstract»

• ### Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants

Publication Year: 1992, Page(s):1772 - 1774
Cited by:  Papers (4)  |  Patents (1)
| | PDF (316 KB)

Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations View full abstract»

• ### The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p+-gate p-channel MOSFETs with fluorine incorporation

Publication Year: 1992, Page(s):1687 - 1693
Cited by:  Papers (25)
| | PDF (672 KB)

Several phenomena have been identified which significantly reduce boron penetration for boron difluoride-implanted or boron/fluorine-co-implanted gates The fluorine-induced threshold-voltage (VTP) shift is minimized by using an as-deposited amorphous silicon gate and a gate oxide process that excludes hydrogen chloride. The VTP shift can be reduced to a leve... View full abstract»

• ### On the temperature variation of threshold voltage of GaAs MESFETs

Publication Year: 1992, Page(s):1571 - 1577
Cited by:  Papers (21)
| | PDF (596 KB)

The authors have investigated the temperature dependence of the threshold voltage of depletion-mode GaAs MESFETs with epitaxially grown n channels. An approach to threshold shift analysis that allows direct comparison with threshold measurement is taken. The contributions from various temperature-dependent effects to the threshold-voltage shift were studied, including the built-in voltage of the S... View full abstract»

• ### Monte Carlo simulation of boron implantation into single-crystal silicon

Publication Year: 1992, Page(s):1614 - 1621
Cited by:  Papers (66)
| | PDF (756 KB)

An improved Monte Carlo simulation model has been developed for boron implantation into single-crystal silicon. This model is based on the Marlowe Monte Carlo code and contains significant improvements for the modeling of ion implantation, including a newly developed local electron concentration-dependent electronic stopping model and a newly developed cumulative damage model. These improvements a... View full abstract»

• ### Two-dimensional analysis of the breakdown mechanism in the etched-groove silicon permeable base transistor

Publication Year: 1992, Page(s):1545 - 1550
Cited by:  Papers (3)
| | PDF (520 KB)

A two-dimensional, two-carrier simulation of a uniformly doped etched-groove permeable-base transistor which includes models for impact ionization and for Auger and Shockley-Read-Hall recombination is reported. It was found that for high current densities the breakdown voltage was reduced by channel avalanche. This mechanism was associated with a strong accumulation of electrons and holes in the s... View full abstract»

• ### A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n+-p HgCdTe photodiodes

Publication Year: 1992, Page(s):1638 - 1645
Cited by:  Papers (42)
| | PDF (652 KB)

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n+-on-p HgCdTe photodiodes is presented. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It was observed that the above two types of diodes differ in the voltage depend... View full abstract»

• ### Optical properties of GaAsP NEA cold cathodes

Publication Year: 1992, Page(s):1758 - 1762
| | PDF (400 KB)

Photovoltage and photoemission experiments have shown that the GaAsP cold cathode negative electron affinity condition was inhibited by a surface defect state. Operationally, the NEA condition was further restricted by cesium coating of nonsemiconductor surfaces resulting in a reduction of band bending at the p surface, unless a negative potential of 50-70 V was applied to the cathode View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy