# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 34
• ### Use of the three-dimensional TLM method in the thermal simulation and design of semiconductor devices

Publication Year: 1992, Page(s):1295 - 1302
Cited by:  Papers (39)
| | PDF (632 KB)

The thermal behavior of semiconductor devices fabricated with a variety of different materials has been analyzed using the three-dimensional transmission-line matrix (TLM) method. This method can easily incorporate the temperature dependence of thermal parameters, is numerically stable, and compares favorably with other numerical techniques in computational expenditure and convenience in modeling ... View full abstract»

• ### Mobility of strained and dislocated InxGa1-xAs semiconductor material

Publication Year: 1992, Page(s):1288 - 1294
Cited by:  Papers (6)
| | PDF (636 KB)

A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched InxGa1-xAs on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing indium concentration are possible, but only occur if the density of misfit dislocations can b... View full abstract»

• ### Design of bipolar imaging devices (BASIS): analysis of random noise

Publication Year: 1992, Page(s):1341 - 1349
Cited by:  Papers (4)  |  Patents (9)
| | PDF (720 KB)

A design methodology for a bipolar imaging device, the base-stored image sensor (BASIS), has been established by theoretical analysis and experimental verification for random noise. The random noise in BASIS is dominated by the shot noise in readout and transient reset operation. The theoretical analysis has been carried out by introducing the probability density functions for these operations. Th... View full abstract»

• ### Noise characterization of an AlGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD)

Publication Year: 1992, Page(s):1282 - 1287
Cited by:  Papers (4)
| | PDF (464 KB)

The noise characterization of an InGaAs interdigitated metal-semiconductor-metal photodetector (MSM-PD) illuminated with 1.3-μm wavelength radiation is presented. The range of frequencies for the noise measurements included is (0.1-100 kHz) and (500 MHz to -1 GHz). A description of the high-frequency measurement setup, as well as the noise spectra for low and high frequencies, is included. Whil... View full abstract»

• ### Multiplicity of discharge channels for a flat fluorescent lamp to backlight a full color LCD

Publication Year: 1992, Page(s):1327 - 1330
Cited by:  Papers (6)
| | PDF (284 KB)

A flat fluorescent lamp (FFL) employing segmented closed hollow cathodes generated through a thick-film technique has been developed. The device contains six sets of such hollow electrodes operating in parallel and thus allowing the branching of discharge current through the six channels. Without the use of a diffuser, the brightness uniformity of a 5-in diagonal FFL is 85% View full abstract»

• ### Accurate delay models for digital BiCMOS

Publication Year: 1992, Page(s):1456 - 1464
Cited by:  Papers (22)  |  Patents (1)
| | PDF (732 KB)

A detailed transient analysis of the MOSFET-BJT combination prevalent in digital BiCMOS gates is presented. The analysis accounts for high-level injection leading to BJT β roll-off, base pushout leading to BJT fT roll-off, short-channel behavior of the MOS drain current, and parasitic capacitances at the base and output. Based on the transient analysis, a piecewise delay e... View full abstract»

• ### Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors

Publication Year: 1992, Page(s):1273 - 1281
Cited by:  Papers (16)
| | PDF (864 KB)

InAlAs/InGaAs HBTs with various emitter junction gradings are simulated using a self-consistent Monte Carlo simulator. The effects of the emitter junction grading and the shift of the emitter-base p-n junction into the emitter depletion region due to diffusion of the base dopant are investigated. A minimum transit time of 1.18 ps is predicted for an In(Ga1-xAlx)As grading wit... View full abstract»

• ### Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE

Publication Year: 1992, Page(s):1428 - 1434
Cited by:  Papers (43)  |  Patents (4)
| | PDF (416 KB)

A static and dynamic model for amorphous silicon thin-film transistors is presented. The theory is based on an assumed exponential distribution of the deep states and the tail states in the energy gap. Expressions are derived that link the density of the localized states and the temperature to the drain current and the distribution of the charge in the transistor channel. In addition the authors t... View full abstract»

• ### High-reliability interconnections for ULSI using Al-Si-Pd-Nd/Mo layered films

Publication Year: 1992, Page(s):1322 - 1326
Cited by:  Papers (14)  |  Patents (2)
| | PDF (604 KB)

An Al-Si-Pd-Nb alloy and a bilayered interconnection using this alloy with molybdenum have been investigated for ULSI interconnections. The electromigration lifetime of Al-Si-0.3 wt.% Pd-0.4 wt.% Nb was 5 times better as compared to Al-Si-0.5 wt.% Cu. In addition, layering this alloy with low-resistivity molybdenum improved the electromigration resistance considerably as compared to Al-Si-Cu layer... View full abstract»

• ### Theoretical analysis of the influences of barrier-enhancement layers on transient responses of MSM photodetectors

Publication Year: 1992, Page(s):1355 - 1362
Cited by:  Papers (18)
| | PDF (496 KB)

Transient responses of In0.53Ga0.47As MSM PDs with abrupt and graded barrier-enhancement layers are simulated by using an ensemble Monte Carlo technique. The effect of the graded layer on transient responses and an appropriate graded-layer thickness for achieving fast responses are discussed. Also, a relevant device scaling law is proposed for In0.53Ga0.... View full abstract»

• ### A functional MOS transistor featuring gate-level weighted sum and threshold operations

Publication Year: 1992, Page(s):1444 - 1455
Cited by:  Papers (402)  |  Patents (63)
| | PDF (1064 KB)

A functional MOS transistor is proposed which works more intelligently than a mere switching device. The functional transistor calculates the weighted sum of all input signals at the gate level, and controls the on' and off' of the transistor based on the result of such a weighted sum operation. Since the function is quite analogous to that of biological neurons, the device is named a neuron MOS... View full abstract»

• ### A model for electroluminescence in SrS:Ce ACTFEL display devices

Publication Year: 1992, Page(s):1331 - 1340
Cited by:  Papers (25)
| | PDF (788 KB)

An analytical model for electroluminescence in SrS:Ce AC thin-film electroluminescent display devices is presented. The model incorporates an exact calculation of the electric field and the effect of activator ionization and bulk traps. Activator ionization is needed to explain several features of luminescence behavior in SrS:Ce devices. These features include the second luminescence peak at the t... View full abstract»

• ### Quantitative correlations between the performance of polysilicon emitter transistors and the evolution of polysilicon/silicon interfacial oxides upon annealing

Publication Year: 1992, Page(s):1420 - 1427
Cited by:  Papers (7)
| | PDF (792 KB)

Correlations between oxide breakup and polysilicon-emitter bipolar characteristics are quantitatively established by introducing kinetic terms for oxide breakup in the bipolar transport equations. It is verified that emitter resistance largely depends on the continuity of the interfacial oxide. Similarly, oxide breakup is seen to directly result in an increase in base current up to temperatures of... View full abstract»

• ### Guiding center fluid model of the crossed-field amplifier

Publication Year: 1992, Page(s):1529 - 1542
Cited by:  Papers (12)
| | PDF (1104 KB)

A closed, nonlinear set of fluid equations, based on the electron guiding center orbits, is developed to model the CFA behavior. In synchronism with the RF signal frame, the streamlines follow the equipotential surfaces of the transformed fields. In steady state, the flow is incompressible. The equations are implemented in a numerical algorithm that is much faster and more efficient than existing ... View full abstract»

• ### A self-aligned short process for insulated-gate bipolar transistors

Publication Year: 1992, Page(s):1317 - 1321
Cited by:  Papers (4)  |  Patents (1)
| | PDF (492 KB)

An n-channel vertical insulated-gate bipolar transistor (IGBT) process which implements a self-aligned p+ short inside the DMOS diffusion windows is proposed and demonstrated experimentally. The salient feature of the new process is the placement of a poly-Si plug to define the diffusion window of the p+ short. Similar forward conduction characteristics and tradeoffs... View full abstract»

• ### On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications

Publication Year: 1992, Page(s):1398 - 1409
Cited by:  Papers (27)  |  Patents (48)
| | PDF (916 KB)

In the presence of carrier multiplication in the base collector diode the Ic(Ib, Vce) characteristics of bipolar transistors show a bistable region of operation. This phenomenon is investigated experimentally and theoretically with the help of the extended Gummel/Poon model. Analysis of the output characteristics yields two breakdown volt... View full abstract»

• ### Multistep field plates for high-voltage planar p-n junctions

Publication Year: 1992, Page(s):1514 - 1520
Cited by:  Papers (8)  |  Patents (12)
| | PDF (516 KB)

Multistep field plates are often used to improve the blocking capability of planar p-n junctions. The electric field at the semiconductor surface below the field plate peaks, however, at every edge of the dielectric. In order to achieve the highest possible breakdown voltage at a given number of steps in the dielectric, their heights have to be adjusted as to equalize the corresponding peak fields... View full abstract»

• ### A new charge-control model for single- and double-heterojunction bipolar transistors

Publication Year: 1992, Page(s):1303 - 1311
Cited by:  Papers (38)
| | PDF (748 KB)

A new charge-control relation is derived for heterojunction bipolar transistors. The relation is valid for arbitrary doping density profiles and for all levels of injection in the base. It is applicable to both single- and double-heterojunction transistors. The model is an improvement over another recently proposed charge-control model that was valid only for constant doping density and low inject... View full abstract»

• ### A metal-amorphous silicon-germanium alloy Schottky barrier for infrared optoelectronic IC on glass substrate application

Publication Year: 1992, Page(s):1350 - 1354
Cited by:  Papers (25)  |  Patents (1)
| | PDF (480 KB)

The effects of material and structure parameters on an amorphous-silicon-germanium alloy Schottky barrier diode's responsivity have been investigated in detail. The effects contradict each other. A compromise is made in selecting parameters for construction of a Si1-xGex:H Schottky barrier for an IR detector. The optimized amorphous-silicon-germanium alloy Schottky diode usin... View full abstract»

• ### Analysis of low signal level characteristics for high-sensitivity CCD charge detector

Publication Year: 1992, Page(s):1465 - 1468
Cited by:  Papers (7)  |  Patents (1)
| | PDF (352 KB)

Low signal level characteristics for a highly sensitive floating surface amplifier (FSA) have been analyzed using a two-dimensional device simulator. The linearity, within 5% variance of charge/voltage conversion ratio from 0.5 to 4000 signal electrons, has been confirmed with this simulation. This result shows that it is possible to make the charge/voltage conversion ratio under 10 signal electro... View full abstract»

• ### Optimized trench MOSFET technologies for power devices

Publication Year: 1992, Page(s):1435 - 1443
Cited by:  Papers (43)  |  Patents (11)
| | PDF (860 KB)

Low-voltage silicon trench power MOSFETs with forward conductivities approaching the silicon limit are reported. Vertical trench power MOSFETs with the measured performances of VDB =55 V (Rsp=0.2 mΩ-cm2, k D=5.7 Ω-pF) and VDB=35 V (Rsp=0.15 mΩ-cm2, k<... View full abstract»

• ### Electrical and optical characteristics of vacuum-sealed polysilicon microlamps

Publication Year: 1992, Page(s):1363 - 1375
Cited by:  Papers (57)  |  Patents (26)
| | PDF (1184 KB)

A silicon-filament vacuum-sealed incandescent light source has been fabricated using IC technology and subsurface micromachining. The incandescent source consists of a heavily doped p+ polysilicon filament coated with silicon nitride and enclosed in a vacuum-sealed (≈80-mT) cavity in the silicon-chip surface. The filament is formed beneath the surface and later released using sacrifi... View full abstract»

• ### EEPROM as an analog storage device, with particular applications in neutral networks

Publication Year: 1992, Page(s):1410 - 1419
Cited by:  Papers (24)  |  Patents (5)
| | PDF (664 KB)

The use of EEPROM as a compact, high-precision, nonvolatile, and reconfigurable analog storage element is investigated, with particular consideration given to the modifiable weight storage and analog multiplication problems in the hardware implementation of a neural network. Industry-standard digital EEPROM cells can be programmed to any analog value of threshold voltage, but programming character... View full abstract»

• ### A 200-A/2000-V MOS-GTO with improved cell design

Publication Year: 1992, Page(s):1521 - 1528
Cited by:  Papers (19)  |  Patents (2)
| | PDF (720 KB)

A large-area MOS-controlled thyristor (MOS-GTO) has been realized by introducing a new wafer-scale repair technique. The large-area device has a diameter of 3 cm. It has been contacted with an IC-compatible pressure contact and has been fabricated on a lowly doped n-type substrate suitable for very-high-voltage applications comparable to conventional GTOs. The snubbered and unsnubbered turn-off cu... View full abstract»

• ### Approximations for carrier density in nonparabolic semiconductors

Publication Year: 1992, Page(s):1312 - 1316
Cited by:  Papers (44)
| | PDF (460 KB)

The authors propose simple, analytic approximations that describe properties of semiconductors with nonparabolic energy bands. The approach is based on the two-level kp model of the semiconductor statistics which includes effects of band nonparabolicity and carrier degeneracy. The new expressions are in the form of a correction to the classical, Boltzmann approximation of the semiconducto... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy