Electron Devices, IEEE Transactions on
Issue 11 • Date Nov. 2006
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Table of contents
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PDF (48 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (60 KB)
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Changes in the Editorial Board
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PDF (46 KB)
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Design and Field Emission Test of Carbon Nanotube Pasted Cathodes for Traveling-Wave Tube Applications
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PDF (874 KB)
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The Multivalley Effective Conduction Band-Edge Method for Monte Carlo Simulation of Nanoscale Structures
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PDF (936 KB)
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Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure
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PDF (457 KB)
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Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—Transient Analysis, Parasitics, and Scalability
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PDF (724 KB)
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Operation Principles of 0.18-
Four-Transistor CMOS Image Pixels With a Nonfully Depleted Pinned Photodiode
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PDF (281 KB)
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Development and Testing of a 2-D Transfer CCD
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PDF (641 KB)
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Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs
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PDF (1258 KB)
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The Geometry Effect of Contact Etch Stop Layer Impact on Device Performance and Reliability for 90-nm SOI nMOSFETs
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PDF (457 KB)
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Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown
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PDF (1005 KB)
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Three-Dimensional Integration Technology Based on Wafer Bonding With Vertical Buried Interconnections
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PDF (1340 KB)
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HTMLAims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
