Electron Devices, IEEE Transactions on
Issue 5 • Date May 1992
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Displaying Results 1 - 25 of 48
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Effects of arsenic n+ contact implants on memory switching in vertical polycrystalline silicon resistors
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PDF (248 KB)
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Choice of epitaxial structure to promote performance and uniformity of GaAs/AlGaAs heterojunction bipolar transistors grown by MOVPE
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PDF (632 KB)
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Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's
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PDF (532 KB)
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Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps
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PDF (264 KB)
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A semi-empirical model of the MOSFET's small-signal drain conductance in saturation for analog circuit design
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PDF (236 KB)
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Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect
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PDF (516 KB)
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Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models
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PDF (900 KB)
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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement
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PDF (236 KB)
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Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications
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PDF (672 KB)
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Predicted performance of high-speed integrated-injection logic using InGaAs/InP heterojunction bipolar transistors
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PDF (448 KB)
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Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMICs)
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PDF (420 KB)
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A high-density, self-aligned power MOSFET structure fabricated using sacrificial spacer technology
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PDF (360 KB)
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Extension of the open-circuit voltage decay technique to include plasma-induced bandgap narrowing
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PDF (588 KB)
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A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's
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PDF (704 KB)
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Heterojunction vertical FETs revisited: potential for 225-GHz large-current operation
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PDF (544 KB)
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Effects of shielded-gate structure on on-resistance of the SIT with a high-purity channel region
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PDF (352 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
