# IEEE Transactions on Nuclear Science

## Issue 4  Part 1 • Aug. 2006

This issue contains several parts.Go to:  Part 2

## Filter Results

Displaying Results 1 - 25 of 60
• ### [Front cover]

Publication Year: 2006, Page(s): c1
| |PDF (56 KB)
• ### IEEE Transactions on Nuclear Science publication information

Publication Year: 2006, Page(s): c2
| |PDF (37 KB)

Publication Year: 2006, Page(s):1749 - 1751
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Publication Year: 2006, Page(s): 1752
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• ### RADECS 2005 Conference Overview

Publication Year: 2006, Page(s):1753 - 1754
| |PDF (34 KB) | HTML
• ### List of reviewers

Publication Year: 2006, Page(s): 1755
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• ### Comparative Study of Pulsed X-Ray and$gamma$-Ray Radiation-Induced Effects in Pure-Silica-Core Optical Fibers

Publication Year: 2006, Page(s):1756 - 1763
Cited by:  Papers (9)
| |PDF (975 KB) | HTML

We have investigated the variation of the optical absorption induced by pulsed (dose rate >108 rad/s) and continuous (<50 rad/s) gamma-ray exposures in pure-silica-core optical fibers. Tested multimode waveguides, designed with well-defined concentrations of hydroxyl groups and chlorine impurity, are possible candidates for integration in the plasma diagnostics of LMJ and ITER fac... View full abstract»

• ### Measurements of Random Telegraph Signal in CCDs Irradiated With Protons and Neutrons

Publication Year: 2006, Page(s):1764 - 1771
Cited by:  Papers (12)
| |PDF (693 KB) | HTML

CCD imagers have been irradiated with 10 to 100MeV protons, 45 MeV neutrons and measurements focussed on random telegraph signal (RTS) characterization. The objective is to propose a method for RTS detection and to analyze pixel behavior with temperature, particle species and energy View full abstract»

• ### Effects of Total Dose Irradiation on Single-Event Upset Hardness

Publication Year: 2006, Page(s):1772 - 1778
Cited by:  Papers (30)
| |PDF (443 KB) | HTML

The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst-case hardness assurance test conditions for space environments. SRAMs from six different vendors were characterized for single-event upset (SEU) hardness at proton energies from 20 to 500 MeV and at temperatures of 25 and 80degC after total dose irradiating the SRAMs wi... View full abstract»

• ### Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

Publication Year: 2006, Page(s):1779 - 1786
Cited by:  Papers (12)
| |PDF (222 KB) | HTML

This paper discusses mechanisms and circuit-related factors that affect the degradation of linear integrated circuits from radiation in space. For some circuits there is sufficient degradation to affect performance at total dose levels below 4 krad(Si) because the circuit design techniques require higher gain for the pnp transistors that are the most sensitive to radiation. Qualification methods a... View full abstract»

• ### Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

Publication Year: 2006, Page(s):1787 - 1793
Cited by:  Papers (13)
| |PDF (2726 KB) | HTML

This paper deals with SEE rate prediction and proposes a semi-empirical approach that makes no use of the RPP concept. The investigation is based on a reduced set of ground data and SEU/MBU results are compared with in-flight data obtained on memories on-board ICARE (SAC-C orbit). Two-dimensional mixed-mode simulations complete this study and provide first insight to understand the observed behavi... View full abstract»

• ### Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

Publication Year: 2006, Page(s):1794 - 1798
Cited by:  Papers (9)
| |PDF (280 KB) | HTML

The interaction between a heavy ion and the overlayer materials in an integrated circuit may result in a nuclear reaction. This reaction leads to a charge generation profile that is substantially altered from the profile generated during a direct ionization event. In this work, nuclear reactions are integrated into the modeling of the SEU response of an SRAM cell using GEANT4-based simulations. Th... View full abstract»

• ### Influence of Laser Pulse Duration in Single Event Upset Testing

Publication Year: 2006, Page(s):1799 - 1805
Cited by:  Papers (28)
| |PDF (447 KB) | HTML

Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically View full abstract»

• ### Measurement of Single-Event Effects on a Large Number of Commercial DRAMs

Publication Year: 2006, Page(s):1806 - 1812
Cited by:  Papers (10)  |  Patents (3)
| |PDF (779 KB) | HTML

To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or 'Tsubas') into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight ex... View full abstract»

• ### Single Event Effects in NAND Flash Memory Arrays

Publication Year: 2006, Page(s):1813 - 1818
Cited by:  Papers (17)
| |PDF (326 KB) | HTML

We are showing for the first time the charge loss due to heavy ion irradiation on Flash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell. The resulting threshold voltage shift DeltaVTH grows with ion LET and w... View full abstract»

• ### Laser-Induced Latchup Screening and Mitigation in CMOS Devices

Publication Year: 2006, Page(s):1819 - 1824
Cited by:  Papers (16)
| |PDF (3088 KB) | HTML

The application of the pulsed laser approach for identifying latch-up sensitive regions in CMOS circuitry is described. The utility of this approach for preliminary latchup screening of both COTS and space-qualified parts for applications in radiation environments is described. An application of hardening-by-design principles in which a space-qualified CMOS product is modified, based on the pulsed... View full abstract»

• ### Analysis of the Transient Response of High Performance 50-nm Partially Depleted SOI Transistors Using a Laser Probing Technique

Publication Year: 2006, Page(s):1825 - 1833
Cited by:  Papers (19)
| |PDF (384 KB) | HTML

A new experimental technique is used to analyze the transient response of partially depleted SOI devices to pulsed laser irradiation. This new technique allows calibration of the deposited charge in the sensitive volume (i.e., the body region of the measured SOI transistors) and then the quantitative analysis of the device transient response. In particular 50-nm gate length SOI transistors have be... View full abstract»

• ### Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits

Publication Year: 2006, Page(s):1834 - 1838
Cited by:  Papers (3)
| |PDF (213 KB) | HTML

The new model to characterize radiation induced or single event latchup is developed. Analytical expressions for radiation dose rate and LET threshold have been obtained. The model fits the experimental data reasonably well View full abstract»

• ### Solar Particle Events and Self-Organized Criticality: Are Deterministic Predictions of Events Possible?

Publication Year: 2006, Page(s):1839 - 1843
Cited by:  Papers (11)
| |PDF (172 KB) | HTML

Evidence is presented that solar particle events are a self-organized critical phenomenon. Using daily and monthly fluences of solar protons measured by the IMP-8 and GOES satellite instrumentation over a 28-year period, long-term correlation of events, fractal characteristics and power function behavior for the density functions of fluence magnitudes and waiting times are demonstrated. The implic... View full abstract»

• ### A Model for the Geostationary Electron Environment: POLE, From 30 keV to 5.2 MeV

Publication Year: 2006, Page(s):1844 - 1850
Cited by:  Papers (9)
| |PDF (961 KB) | HTML

In 2003, a model for the geostationary electron environment: POLE (Particle ONERA-LANL Environment) has been developed at ONERA/DESP. This model is based on the full complement of Los Alamos National Laboratory geostationary satellites, covers the period 1976-2001 and is valid from 30 keV up to 2.5 MeV and takes into account the solar cycle variation. Over the period 1976 to present, three differe... View full abstract»

• ### Improvement to and Validations of the QinetiQ Atmospheric Radiation Model (QARM)

Publication Year: 2006, Page(s):1851 - 1858
Cited by:  Papers (39)
| |PDF (1120 KB) | HTML

The QinetiQ atmospheric radiation model (QARM) is a comprehensive model of the energetic radiation in the atmosphere. In this paper we report on the improvement and validation activities for this model. The improvements include the implementation of two additional cosmic ray models, new response matrix, dose rate and flight dose calculation facilities. Tests/validations of the model have been carr... View full abstract»

• ### Simplified Readout of UVPROM Dosimeters for Spacecraft Applications

Publication Year: 2006, Page(s):1859 - 1862
Cited by:  Papers (5)
| |PDF (283 KB) | HTML

A simplified procedure for measuring the absorbed dose using floating-gate transistors is presented and demonstrated on 64 K UVPROMs. Reading the dosimeter involves a standard electrical readout at 5 V, generates shifts in the response curve that are proportional to absorbed dose, and is suitable for applications on spacecraft View full abstract»

• ### Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code

Publication Year: 2006, Page(s):1863 - 1870
Cited by:  Papers (13)
| |PDF (4105 KB) | HTML

This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order t... View full abstract»

• ### A Comparative Study Between Proton and Neutron Induced SEUs in SRAMs

Publication Year: 2006, Page(s):1871 - 1875
Cited by:  Papers (3)
| |PDF (272 KB) | HTML

We report on irradiation induced SEU by high-energy protons and neutrons. The experiments were performed at The (odor) Svedberg Laboratory in Uppsala, Sweden, and at the Weapons Neutron Research (WNR) facility, Los Alamos, USA. A wide range of SRAMs were used to study the differences between proton and neutron induced SEUs at different energies View full abstract»

• ### DASIE Analytical Version: A Predictive Tool for Neutrons, Protons and Heavy Ions Induced SEU Cross Section

Publication Year: 2006, Page(s):1876 - 1882
Cited by:  Papers (9)
| |PDF (1725 KB) | HTML

This paper presents the new detailed analysis of the secondary ion effect analytical version that allows fast and accurate calculation of neutron, proton and heavy ion cross sections in SRAM based memories. The advantage of this new version is a better determination of the input parameters using heavy ion data. A validation is presented by comparing simulation results with experimental data for te... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA