# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 46
• ### Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]

Publication Year: 1992, Page(s):749 - 750
| | PDF (212 KB)

For the original article see ibid., vol.38, no.3, p.650-60 (1991). Using transistor transconductance as a measure of speed, M.V. Fischetti and S.E. Laux, the authors of the above-titled paper, conclude that GaAs technology does not offer any significant speed advantage over Si. However, the commenter points out that their contention is contradicted by the data in their paper which show that GaAs M... View full abstract»

• ### Comments on "A self-backgating GaAs MESFET model for low-frequency anomalies

Publication Year: 1992
| | PDF (121 KB)

For the original article see ibid., vol.37, no.10, p.2148-57 (1990). The commenter maintains that some basic equations of the model in the above-titled paper by M. Lee and L. Forbes are questionable. Particularly, the development of the equations for calculating the small-signal output conductance is questioned.<> View full abstract»

• ### Digital GaAs FET versus Si FET gate delay as predicted from the electron velocity

Publication Year: 1992, Page(s):745 - 748
Cited by:  Papers (1)
| | PDF (256 KB)

A FET model that takes into account the effective saturation velocity (including the effect of velocity overshoot), fringing capacitance, and source resistance is discussed. The model is applied to identical differential source-coupled FET logic gates in both GaAs and Si. The simulated gate delay of the Si logic gate is about 2.6 times that of the GaAs gate, thus refuting the common hypothesis tha... View full abstract»

• ### The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

Publication Year: 1992, Page(s):742 - 745
Cited by:  Papers (9)
| | PDF (396 KB)

The offset voltage of an emitter-mesa AlGaAs-GaAs heterojunction bipolar transistor was obtained from the transistor's current-voltage characteristics calculated using a two-dimensional numerical simulation with a current boundary condition at the base contact. The results show that the offset voltage strongly depends on the position of the emitter-base p-n junction and on the width of the emitter... View full abstract»

• ### The effects of carrier-velocity saturation on high-current BJT output resistance

Publication Year: 1992, Page(s):629 - 633
Cited by:  Papers (8)
| | PDF (392 KB)

Modern bipolar junction transistors (BJTs) tend to operate with saturated carrier velocity in the collector space-charge region. A physical analysis of the effects of velocity saturation on the output resistance of BJTs, especially for high current levels is presented. Physical analyses show that when the collector current density approaches a critical value, the Early voltage can increase signifi... View full abstract»

• ### An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors

Publication Year: 1992, Page(s):740 - 742
Cited by:  Papers (3)
| | PDF (280 KB)

An analytic theory of the impact of velocity overshoot on the drain current characteristics of field-effect transistors is presented. Good agreement between the theory and experimental data is demonstrated for silicon MOS devices. Some applications of the theory are outlined View full abstract»

• ### Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

Publication Year: 1992, Page(s):623 - 628
Cited by:  Papers (42)
| | PDF (496 KB)

The authors studied the influence of the velocity saturation in the base-collector depletion layer and compared the injected electron concentration profile, collector current density, and base transit time with velocity saturation to those without. The collector current with velocity saturation is only a little smaller than the current without saturation, but the injection electron concentration p... View full abstract»

• ### Breakdown walkout in AlAs/GaAs HEMTs

Publication Year: 1992, Page(s):738 - 740
Cited by:  Papers (33)
| | PDF (316 KB)

It was observed that the gate breakdown voltage of an unpassivated AlGaAs/GaAs HEMT can move to higher negative values when a current is allowed to flow through the gate under reverse gate bias voltage. When a reverse bias is applied between the gate and source, this breakdown walkout' can be accompanied by a permanent increase in device source resistance and decreases in transconductance and dra... View full abstract»

• ### Dependence of thin-oxide films quality on surface microroughness

Publication Year: 1992, Page(s):537 - 545
Cited by:  Papers (194)  |  Patents (7)
| | PDF (800 KB)

The effects of silicon surface microroughness on electrical properties of thin-oxide films, such as breakdown electric field intensity (EBD) and time-dependent dielectric breakdown (QBD), have been studied, where the microroughnesses of silicon and silicon dioxide surfaces are evaluated by the scanning tunneling microscope (STM) and the atomic force microsco... View full abstract»

• ### An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substrates

Publication Year: 1992, Page(s):614 - 622
Cited by:  Papers (28)  |  Patents (3)
| | PDF (684 KB)

A simple closed-form expression of the threshold voltage is developed for trench-isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the nonuniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling ... View full abstract»

• ### Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs

Publication Year: 1992, Page(s):677 - 684
Cited by:  Papers (14)
| | PDF (736 KB)

The inversion layer mobility of reoxidized nitrided oxide (RNO) n-MOSFETs (and, to a lesser degree, p-MOSFETs) is found to increase after irradiation and subsequent low-temperature anneal, a process sequence which occurs in X-ray or electron-beam lithography fabrication of CMOS circuits. 1/f noise measurements indicate that the irradiation and anneal reduce the density of near-interface e... View full abstract»

• ### Silicon trench undercutting caused by the preferential plasma etching of surface-implanted-regions

Publication Year: 1992, Page(s):737 - 738
| | PDF (224 KB)

It is shown that the residual surface damage present in heavily implanted n+ regions causes severe undercutting during the reactive ion etching (RIE) of silicon trenches in a SiCl4-N 2 plasma. The trench sidewall undercutting was not observed when the trenches were etched in unimplanted silicon wafers. For specific implant does of arsenic and phosphorus, optimal th... View full abstract»

• ### Electric micromotor dynamics

Publication Year: 1992, Page(s):566 - 575
Cited by:  Papers (66)  |  Patents (1)
| | PDF (1024 KB)

The dynamometry technique uses a strobe flash which is triggered from a phase excitation signal after a known time delay. This acts essentially as a video shutter allowing the position of the rotor as a function of the time delay to be recorded and measured. A dynamic model is developed that includes an electrostatic drive term, a velocity-dependent viscous drag term, and a Coulomb friction term t... View full abstract»

• ### Nanostructure resonances

Publication Year: 1992, Page(s):520 - 522
Cited by:  Papers (13)
| | PDF (232 KB)

Coherent electron propagation is discussed for a class of nanostructures in which a T' arrangement of quasi-linear conductors has a closed cavity element at the bottom of the T and electrons are transmitted between the ends of the T bar. It is proposed that resonant transmission effects will occur when propagation from the upright T element into the bar is made weak, by a constriction or a gate p... View full abstract»

• ### Requirements for accurate MOS-SOI device simulations

Publication Year: 1992, Page(s):581 - 586
Cited by:  Papers (3)
| | PDF (608 KB)

Simulations of the electrical behavior of MOS-SOI devices pose a difficult numerical problem due to the floating substrate region. The numerical analysis techniques required to solve the floating region problem are discussed. Models for the carrier mobilities and lifetime variation with depth into the silicon film are introduced to fit measured SOS device data. The current-voltage characteristics ... View full abstract»

• ### AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits

Publication Year: 1992, Page(s):533 - 536
Cited by:  Papers (17)  |  Patents (4)
| | PDF (536 KB)

Wet chemical etching solutions were developed that allow the selective etching of InP lattice-matched InGaAs and InAlAs compounds using thin pseudomorphic AlAs layers as etch stop. Several dicarboxylic acids were found that allow the etching of indium compounds. The best results were obtained for etchants consisting of succinic acid, ammonia, and hydrogen peroxide. The etch rate in In0.53 View full abstract»

• ### Modulating the bipolar junction transistor subjected to neutron irradiation for integrated circuit simulation

Publication Year: 1992, Page(s):593 - 597
Cited by:  Papers (7)
| | PDF (408 KB)

Bipolar junction transistors (BJTs) are susceptible to particle bombardment in radiative environment. A model that is capable of predicting the performance of a BJT subjected to neutron irradiation and that is suitable for SPICE circuit simulation is presented. It is shown that neutron irradiation affects the emitter-base space-charge region capacitance slightly but strongly influences the forward... View full abstract»

• ### High-field mobility effects in reoxidized nitrided oxide (ONO) transistors

Publication Year: 1992, Page(s):607 - 613
Cited by:  Papers (12)  |  Patents (1)
| | PDF (488 KB)

The high-field mobility behavior of silicon MOSFETs fabricated with reoxidized nitrided oxide (ONO) gate dielectrics has been investigated. Measurements have been performed at both room temperature and 77 K on both n- an p-channel FETs, for both ONO and conventional SiO 2 films. While the peak electron mobility is much higher for standard SiO2, a crossover occurs in the high-... View full abstract»

• ### Sub-half-micrometer concave MOSFET with double LDD structure

Publication Year: 1992, Page(s):671 - 676
Cited by:  Papers (20)  |  Patents (9)
| | PDF (612 KB)

The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high ... View full abstract»

• ### A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-level metal interconnection

Publication Year: 1992, Page(s):494 - 499
Cited by:  Papers (1)
| | PDF (768 KB)

The authors have realized 16-kb SRAMs with maximum address access time of less than 5 ns and typical power dissipation of less than 2 W at temperatures ranging from 25°C to 100°C. For the RAMs, they have developed a triple-level Au-based interconnection technology that reduces the wiring length and chip size of the SRAM so as to achieve high speed and high yield. Consequently, the wiring l... View full abstract»

• ### A novel method to characterize MOS transistors with mixed gate dielectric technologies

Publication Year: 1992, Page(s):734 - 737
Cited by:  Papers (5)
| | PDF (364 KB)

The authors have developed an extraction technique suitable for studying mixed dielectric systems in MOS transistors. The method gives accurate modeling parameters for low-field mobility and surface roughness scattering, and it removes the dependence of gate dielectric capacitance on the results. The technique has been implemented in interpretive BASIC written on a desk-top HP9000 computer, and th... View full abstract»

• ### A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies

Publication Year: 1992, Page(s):648 - 661
Cited by:  Papers (30)
| | PDF (1380 KB)

A nonequilibrium diffusion model has been developed to study the influence of point defects on dopant redistribution, especially for transient enhanced diffusion. The coupled equations for point defects, substitutional impurities, and impurities/point defect pairs are solved under nonequilibriums condition. Charged species are included and the Poisson equation is solved. The characteristics and do... View full abstract»

• ### Improvements in electrostatic discharge performance of InGaAsP semiconductor lasers by facet passivation

Publication Year: 1992, Page(s):561 - 565
Cited by:  Papers (27)  |  Patents (8)
| | PDF (536 KB)

Chemically treating laser facets with aqueous sulfides can significantly improve the electrostatic discharge (ESD) performance of InGaAsP semiconductor lasers. Commercial lasers free of internal defects were subjected to forward-biased Human Body Model ESD stress pulses. Devices passivated with sulfides exhibited a mean ESD failure voltage more than 400% higher than that of the untreated control g... View full abstract»

• ### Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT's with 0.15-μm T-shaped WSix gates

Publication Year: 1992, Page(s):515 - 519
Cited by:  Papers (13)
| | PDF (468 KB)

T-shaped 0.15-μm WSix gate HEMTs have been fabricated on AlGaAs/InGaAs MBE wafers. Their S-parameters, output noise spectral density Pno, and noise temperatures T e at cryogenic temperatures, were measured. The current gain cutoff frequency fT increases from 61 GHz at 295 K to 87 GHz at 90 K. Pno and ... View full abstract»

• ### InGaAs/In(AlGa)As RHET's with InAs pseudomorphic base

Publication Year: 1992, Page(s):479 - 483
Cited by:  Papers (4)  |  Patents (1)
| | PDF (436 KB)

An InGaAs/In(AlGa)As resonant-tunneling hot-electron transistor (RHET) with an INAs pseudomorphic base to increase current gain and to reduce base resistance was designed and fabricated. The conduction band discontinuity between the InAs base and the In(AlGa)As collector barrier was estimated from the thermionic current. The band discontinuity was about 0.38 eV, which agrees well with the calculat... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy