Issue 6 • Date June 2006
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Table of contents
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PDF (61 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (60 KB)
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Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs
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PDF (328 KB)
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Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides
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PDF (240 KB)
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Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics
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PDF (352 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


