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IEEE Transactions on Nuclear Science

Issue 1 • Date Feb 1992

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Displaying Results 1 - 7 of 7
  • A general method for resonance power supply analysis

    Publication Year: 1992, Page(s):29 - 34
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    The resonance power supply is widely used and proved to be an efficient method to supply accelerator magnets. The literature describes several power supply circuits, but no comprehensive theory of operation is presented. The authors present a mathematical method which describes the operation of the resonance power supply and its use for the accurate design of components View full abstract»

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  • SEU-hardened silicon bipolar and GaAs MESFET SRAM cells using local redundancy techniques

    Publication Year: 1992, Page(s):2 - 6
    Cited by:  Papers (4)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (396 KB)

    Silicon bipolar and GaAs FET SRAMs have proven to be more difficult to harden with respect to single-event upset (SEU) mechanisms than have silicon CMOS SRAMs. This is a fundamental property of bipolar and JFET or MESFET device technologies which do not have a high-impedance, nonactive isolation between the control electrode and the current of voltage being controlled. All SEU circuit-level harden... View full abstract»

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  • The use of a Perovskite crystal as a detector for proton beam current

    Publication Year: 1992, Page(s):25 - 28
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    Using a Perovskite crystal, a thermal detector has been designed for measurements of proton beam currents. For a given energy, the detector has a linear response with current intensity and an inverse response with chopping frequency. Measurements up to 50 nA (4.5 MeV H +) were carried out using a cyclotron, and a calibration curve is presented. The detector may be used over a wide range... View full abstract»

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  • Nuclear microprobe imaging of single-event upsets

    Publication Year: 1992, Page(s):7 - 12
    Cited by:  Papers (29)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    An imaging technique has been developed which produces micron-resolution maps of where single-event upsets occur during ion irradiation of integrated circuits. From these `upset images' the identity and size of a circuit's upset-prone components can be directly determined. Utilizing a scanning nuclear microprobe, this imaging technique selectively exposes the lowest functional units of an integrat... View full abstract»

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  • An operator assistance system for beam adjustment of a cyclotron

    Publication Year: 1992, Page(s):13 - 20
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (596 KB)

    The authors discuss a computer-based operator system for cyclotron operators. The main feature of the system is a visual display of feasible setting regions (FSRs) of adjustable parameters. The FSR, derived from constraints among these parameters, shows the valid ranges where set points can be adjusted. Search traces by the operator are superimposed on the same screen as an aid to the operator's m... View full abstract»

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  • High-voltage pulsed life for multistressed polypropylene capacitor dielectric

    Publication Year: 1992, Page(s):21 - 24
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (284 KB)

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University at Buffalo's 2-MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6×106 rad, electrical stress at 40 Vrms/μm, and thermal stress at 90°C. After exposure... View full abstract»

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  • A capacitively coupled dose-rate-dependent transient upset mechanism in a bipolar memory

    Publication Year: 1992, Page(s):35 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (412 KB)

    A pattern sensitivity was observed in the threshold dose rate upset response of a bipolar 16 K PROM for radiation pulse widths of 20-100 ns. For the worst case pattern, the upset threshold was a factor of three lower than for the commonly used checkerboard pattern. The mechanism or this pattern sensitivity was found to be a capacitively coupled voltage transient on a sensitive node which caused a ... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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