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Quantum Electronics, IEEE Journal of

Issue 6 • Date Jun 2006

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Displaying Results 1 - 14 of 14
  • Modelocking and multimode instability in laser intracavity frequency modulation

    Publication Year: 2006 , Page(s): 525 - 537
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (560 KB) |  | HTML iconHTML  

    Using the Maxwell-Bloch equations, we have studied dynamics associated with an electro-optically tunable laser modulated by a sinusoidal signal with a frequency near the cavity free spectral range. We find that frequency modulation (FM) modelocking may occur when a higher order FM mode acquires the lowest threshold. For short-cavity lasers, the pulse waveform in modelocking is complicated, and unlike the simple Gaussian shape suggested by previous studies. In order to explain instability observed in laser FM operation, we develop a linear stability analysis for the lasing FM mode. Our analysis shows that this type of instability is attributed to mode competition and to laser relaxation dynamics. We then confirm the analytic results with numerical simulations. View full abstract»

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  • A microscopic model for the static and dynamic lineshape of semiconductor lasers

    Publication Year: 2006 , Page(s): 538 - 551
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1528 KB) |  | HTML iconHTML  

    Direct frequency modulation characteristics in semiconductor lasers are described theoretically in a physics-based multidimensional framework. A microscopic formulation of a phase equation without the need of linewidth enhancement factors is derived directly from Maxwell's equations. This novel model uses a local material phase coefficient instead of the linewidth enhancement factor. Hence, the impact of local phase changes on the optical mode can be described via a spatial integration in analogy to mode gain. The model is applied to the modulation-induced fine structure of the laser power spectrum. It is found that the asymmetry in the modulation-induced fine structure observed in measurements can be explained by the proposed model taking temperature, carrier, and photon effects on the material phase coefficient into account. Furthermore, the implementation of the photon phase into a multidimensional device simulator is described. View full abstract»

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  • Improved semiconductor-laser dynamics from induced population pulsation

    Publication Year: 2006 , Page(s): 552 - 562
    Cited by:  Papers (22)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (784 KB) |  | HTML iconHTML  

    This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers. View full abstract»

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  • Compositional tuning of photoluminescence properties in Nd-doped YAG-YSGG mixed structures

    Publication Year: 2006 , Page(s): 563 - 569
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (896 KB) |  | HTML iconHTML  

    The photoluminescence (PL) properties of neodymium-doped yttrium aluminum garnet and yttrium scandium gallium garnet mixed structures were investigated as a function of the relative concentration of the two garnets. The blue shift of the emission bands in the 930-950-nm range is ascribed to compositional tuning effect. An analytical model to estimate the variation of the PL position as a function of the compositional host structure is proposed. View full abstract»

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  • Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers

    Publication Year: 2006 , Page(s): 570 - 580
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1880 KB) |  | HTML iconHTML  

    We have studied experimentally and theoretically the dynamics of electron density in a semiconductor laser subject to a wide range of optical injection strength. Within the locking bandwidth, three-dimensional injection locking stability maps were generated to present a complete picture of locking. Beyond the locking range, resonance frequency shifts were observed and systematically investigated. This phenomenon was successfully correlated with the variation of carrier density and theoretically verified. View full abstract»

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  • Uni-directional time-domain bulk SOA Simulator considering carrier depletion by amplified spontaneous emission

    Publication Year: 2006 , Page(s): 581 - 588
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (568 KB) |  | HTML iconHTML  

    A novel and comprehensive model for semiconductor optical amplifiers (SOAs) to be used in high bit rate (10-160 Gb/s) optical communication systems is presented. Its uni-directional and time-domain character makes it very appropriate to be efficiently integrated in a high-level systems simulator, as is explained through a comprehensive comparison and classification of prominent SOA models/simulators. Despite its fast execution time, the corresponding SOA simulator accurately considers a manifold of ultra-fast nonlinear effects and dynamics and, for the first time within a uni-directional simulator, the impact of amplified spontaneous emission (ASE) on the carrier dynamics. According to the numerical results here presented, the latter effect is fundamental in the simulation of SOAs longer than 0.5 mm. View full abstract»

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  • Comprehensive above-threshold analysis of antiresonant reflecting optical waveguide edge-emitting diode laser

    Publication Year: 2006 , Page(s): 589 - 599
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2032 KB) |  | HTML iconHTML  

    A three-dimensional (3-D) above-threshold analysis has been performed for laterally antiguided laser structures of the antiresonant-reflecting-optical-waveguide type, of relatively large core width (∼ 10 μm), for high-power, single-spatial-mode operation. A 3-D numerical code has been developed, which takes into account carrier diffusion in the quantum well as well as edge radiation losses. The laser characteristics are calculated as functions of the above-threshold drive level. Within the simulation, 3-5 higher order optical modes on a "frozen background" are computed by the Arnoldi algorithm. Because of the nonuniform gain saturation of the lasing mode, the modal gains for higher order modes increase with the drive current due to increasing overlap of their fields with the two-dimensional gain distribution. The onset of threshold for higher order modes puts an upper limit on the range for stable single-mode operation. The above-threshold analysis is done for various values of the width of the reflector region, below and above the lateral-antiresonance condition. It is found that the maximum intermodal discrimination, which in turn provides the maximum single-mode power, is obtained when the reflector-region width is ∼25 % larger that its value at antiresonance. Then, for 10-μm-core devices, stable, single-mode operation is found to occur to drive levels as high as 41 × threshold, with single-mode output powers as high as 1.45 W. View full abstract»

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  • Analysis and design of unidirectional erbium-doped waveguide ring lasers

    Publication Year: 2006 , Page(s): 600 - 607
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (640 KB)  

    This paper examines the possibility of fabricating unidirectional erbium-doped waveguide ring lasers (EDWRLs) without the use of optical isolators and analyzes factors affecting directionality in such lasers. The analysis is carried out using numerical simulations based on a rate-propagation equation model. Two methods of obtaining unidirectional operation are investigated: feeding back radiation by external retro-reflector and employing integrated intra-cavity Bragg grating with an asymmetric profile. Tendency to unidirectional operation of the ring laser due to one-side pumping is also discussed in conjunction with the other methods. It is shown that counter-directional wave suppression of more than 20 dB can be attained using principles of EDWRL design elaborated in this paper. View full abstract»

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  • Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasers

    Publication Year: 2006 , Page(s): 608 - 615
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (472 KB)  

    There remains controversy surrounding the cause of the magnitude and temperature sensitivity of the threshold current density of 1.3-μm GaInNAs quantum-well (QW) lasers, with several authors attributing the strong temperature sensitivity to hole leakage, due to the relatively low valence band offset in GaInNAs/ GaAs QW structures. We use a Poisson solver along with a ten-band k.p Hamiltonian to calculate self-consistently the influence of electrostatic confinement on the optical gain in such lasers. We find that the inclusion of such effects significantly reduces the hole leakage effect, with the electrostatic attraction of the electrons significantly increasing the binding of heavy holes in the QW region. We conclude by comparison with previous theoretical and experimental studies that the room temperature threshold current is generally dominated by monomolecular recombination, while the temperature sensitivity can be explained as predominantly due to Auger recombination. View full abstract»

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  • Table of contents

    Publication Year: 2006 , Page(s): 616
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    Freely Available from IEEE
  • [Front cover]

    Publication Year: 2006 , Page(s): 617
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics publication information

    Publication Year: 2006 , Page(s): 618
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    Freely Available from IEEE
  • Special issue on optical code in optical communications and networks

    Publication Year: 2006 , Page(s): 619
    Save to Project icon | Request Permissions | PDF file iconPDF (119 KB)  
    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2006 , Page(s): 620
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    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University