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Quantum Electronics, IEEE Journal of

Issue 4 • Date April 2006

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Displaying Results 1 - 18 of 18
  • Fabry-Perot semiconductor laser injection locking

    Publication Year: 2006 , Page(s): 353 - 356
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (208 KB) |  | HTML iconHTML  

    Injection locking of a semiconductor laser is studied using a Fabry-Perot (FP) model. For low injection powers the FP model gives the same results as the rate equation model. At higher injection powers, the FP laser has an unlimited injection locking bandwidth; however, regions of the bandwidth are dynamically unstable. The influence of the linewidth enhancement factor on injection locking and its stability are also studied using the FP model. Finite values of the linewidth enhancement factor lead to increased locking bandwidth, asymmetry in the locking range and a saddle-node bifurcation in the injection locked solutions, of which only lower carrier density arm has linearly stable solutions. View full abstract»

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  • High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime

    Publication Year: 2006 , Page(s): 357 - 362
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (864 KB)  

    A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (α-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion D=1600 ps/nm) and the record average fiber optical output power (Pf) of +5.3 dBm were achieved at 25°C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45°C and Pf=+3.0 dBm. View full abstract»

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  • Spatially Resolved Femtosecond Pump–Probe Spectroscopy in Broad-Area Semiconductor Lasers

    Publication Year: 2006 , Page(s): 363 - 371
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB)  

    We investigate the ultrafast gain dynamics in broad-area semiconductor lasers with particular emphasis on spatial and spatiotemporal effects. We present a spatially resolved femtosecond pump–probe experiment which allows us to measure the compression and recovery of the gain with 250-fs temporal and 15 \mu\hbox {m} spatial resolution. We find a significant spatial variation of the gain recovery time across the lateral laser coordinate indicating an influence of the extended laser structure on the ultrafast carrier relaxation. Moreover, we are able to follow the spatiotemporal relaxation of the ultrafast spatiospectral gain saturation within the extended semiconductor active area. We find diffusion-like broadening of the locally suppressed gain on two distinct ultrafast timescales, within several picoseconds and several tens of picoseconds, resulting from an interplay between intraband relaxation, spatial holeburning, and light propagation. Supported by microscopic modeling, our results provide insight into the different mechanisms and timescales associated with the spatiotemporal carrier dynamics. These findings are essential for the design of laterally extended semiconductor active devices for ultrafast optical signal processing applications. View full abstract»

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  • Spatially resolved femtosecond pump-probe spectroscopy in broad-area semiconductor lasers

    Publication Year: 2006 , Page(s): 363 - 371
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB)  

    We investigate the ultrafast gain dynamics in broad-area semiconductor lasers with particular emphasis on spatial and spatiotemporal effects. We present a spatially resolved femtosecond pump-probe experiment which allows us to measure the compression and recovery of the gain with 250-fs temporal and 15 μm spatial resolution. We find a significant spatial variation of the gain recovery time across the lateral laser coordinate indicating an influence of the extended laser structure on the ultrafast carrier relaxation. Moreover, we are able to follow the spatiotemporal relaxation of the ultrafast spatiospectral gain saturation within the extended semiconductor active area. We find diffusion-like broadening of the locally suppressed gain on two distinct ultrafast timescales, within several picoseconds and several tens of picoseconds, resulting from an interplay between intraband relaxation, spatial holeburning, and light propagation. Supported by microscopic modeling, our results provide insight into the different mechanisms and timescales associated with the spatiotemporal carrier dynamics. These findings are essential for the design of laterally extended semiconductor active devices for ultrafast optical signal processing applications. View full abstract»

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  • Relationship between the slowing and loss in optical delay lines

    Publication Year: 2006 , Page(s): 372 - 377
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (312 KB)  

    In this paper, we demonstrate the relation between the amount of slowing and the amount of insertion loss in an optical slow wave structure when the material used has finite absorption. The delay properties are calculated as a function of wavelength for a single Fabry-Perot resonator and a delay line consisting of multiple coupled resonators. In all of these delay lines, if the amount of delay increases, the insertion loss of the line likewise increases. For low material loss, the normalized increase in delay is equal to the normalized increase in insertion loss. We also compare a coupled resonator delay line to a simple waveguide made of the same material and with the same amount of delay. The simple waveguide always has less insertion loss than the coupled resonator line because of the unavoidable reflection from the coupled resonator line. Even in the case of an asymmetric mirror delay line with zero reflection at the input, the simple waveguide has less insertion loss. View full abstract»

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  • Optical pumping of CHD2OH and CH2DOH methanol isotopomers by means of a new pulsed CO2 laser: characterization of new far-infrared laser emissions

    Publication Year: 2006 , Page(s): 378 - 380
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (112 KB)  

    We have reinvestigated CHD2OH and CH2DOH methanol isotopomers as sources of far-infrared laser radiation using the optical pumping technique. A new waveguide pulsed CO2 laser was used, that delivers high peak powers also in the 10-HP CO2 band and has allowed us to observe 19 new far-infrared emissions from CHD2OH and 8 new far-infrared emissions from CH2DOH. Each of them is characterized in wavelength, pump offset from the center of the exciting CO2 line, relative polarization, optimum operating pressure and intensity. View full abstract»

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  • Development of quasi-end-fired waveguide plastic dye laser

    Publication Year: 2006 , Page(s): 389 - 396
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1080 KB)  

    A quasi-end-fire (QEF) pumping scheme was proposed and studied as a novel laser-pumping-scheme for a laser-dye-doped plastic waveguide laser with distributed feedback. This pumping scheme resembled longitudinal pumping, but also has the advantage of controllable absorption length of the injected pump beam. A first demonstration of the QEF was performed and the pumping beam controlling was also investigated. View full abstract»

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  • Design and performance of an InGaAs-InP single-photon avalanche diode detector

    Publication Year: 2006 , Page(s): 397 - 403
    Cited by:  Papers (40)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (624 KB)  

    This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. View full abstract»

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  • Tunable dispersion properties of liquid crystal infiltrated into a two-dimensional photonic crystal

    Publication Year: 2006 , Page(s): 404 - 409
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (488 KB)  

    Tunable dispersion properties of liquid crystal (LC) infiltrated into a two-dimensional silicon photonic crystal (PC) are presented. For the analysis of refraction tuning, polarization splitting and superprism effect, we make use of the variations of the dispersion curves as a function of the orientation of the optic axis of the LC. In particular, we show that the light propagation angle in the PC becomes continuously tunable by reorienting the optic axis of the LC; at a certain incident angle an extreme sensitivity of the propagation angle as a function of the orientation of the optic axis of the LC occurs. Moreover, the splitting of the transverse magnetic and transverse electric polarizations of light is substantially larger than the splitting in a conventional bulk anisotropic medium. This splitting angle can also be well controlled by adjusting the optic axis orientation of the LC. Furthermore, the variation of optic axis orientation also modifies the sharp corners of the dispersion curve, which in turn gives an excellent control of the superprism effect in the PC. View full abstract»

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  • Programmable spectral design using a simple binary Bragg-diffractive structure

    Publication Year: 2006 , Page(s): 410 - 417
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (440 KB)  

    We present the binary supergrating (BSG), a digital approach to spectral engineering that permits the near-arbitrary control of optical amplitude and phase in a wavelength-dependent manner. The BSG is a guided-wave technology that consists of an aperiodic sequence of binary elements, leading to a simple, robust and practical form. This sequence, determined through the process of BSG synthesis, encodes an optical program that defines device functionality. Our approach to synthesis builds on existing knowledge in the design of "analog" gratings through a two-step process: first, exploit the best analog-domain methods, then transform the resulting structure into binary form. Accordingly, we explore the notion of diffractive structure transformation and introduce the principle of "key information". We assemble such key information for Bragg-regime structures, and employ it in the design of grating quantizers based on an atypical form of Delta-Sigma modulation. We illustrate this approach through the synthesis of a complex dense-wavelength division-multiplexed telecom filter featuring 50-GHz channel spacing, -40-dB stopbands, and 25-GHz-wide passbands that are flat to within 0.2 dB. View full abstract»

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  • Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors

    Publication Year: 2006 , Page(s): 418 - 426
    Cited by:  Papers (33)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (912 KB) |  | HTML iconHTML  

    In this paper, we present a physics-based full three-dimensional (3-D) numerical simulation of simultaneous two-color medium-wave infrared long-wave infrared (MWIR-LWIR) and LWIR-very-long-wave infrared (VLWIR) detectors. The present approach avoids geometrical simplifications typical of one- or two-dimensional models that can introduce errors which are difficult to quantify. We include all the relevant material physics and the drift-diffusion equations are solved on a 3-D finite element grid. We simulate device structures that have been fabricated and characterized for operation in the MWIR-LWIR spectral regions and compare the numerical results with the measured values. Furthermore, we apply the same model to predict the performance of similar detector structures intended for operation in the LWIR-VLWIR spectral regions. View full abstract»

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  • Identification of the optimum time-delay for chaos synchronization regimes of semiconductor lasers

    Publication Year: 2006 , Page(s): 427 - 434
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (640 KB)  

    It is shown that the optimum correlation for chaos synchronization of master-slave semiconductor lasers occurs at a delay time that is sensitive to both the injection strength and the frequency detuning of the driving field. This effect may be overlooked if the correlation function is not evaluated globally. The correlation function has been used as the de facto method for quantitatively determining the degree of synchronization achieved between unidirectional coupled chaotic semiconductor lasers, see for example . The correlation function is a continuous function of the delay time but is normally evaluated at only two delay times. It is shown that this approach can cause a misidentification of the dominant synchronization process and can also mask important temporal fluctuations in the nature and quality of the chaos synchronization. In essence, two factors contribute to the potential for misidentification, the first is the inherent small time shift required to obtain the optimum correlation and the second is the quasi-periodicity that is present in certain chaotic regimes. This paper shows that a reevaluation of some of the published numerical studies of chaos synchronization is necessary. View full abstract»

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  • Analysis of bit-error rate of vertical-cavity surface-emitting lasers modulated at high speed

    Publication Year: 2006 , Page(s): 435 - 446
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (896 KB) |  | HTML iconHTML  

    A theoretical study of single and multimode vertical-cavity surface-emitting lasers (VCSELs) subject to pseudorandom modulation of the current at a rate of 10 Gb/s is performed. Eye diagrams, probability density functions of the power at the decision time, averaged turn-on delay, and timing jitter are analyzed for different values of the on- and off-state currents. Bit sequences where errors occur are identified. Extensive simulations have been performed to obtain the bit-error rate (BER) for the back-to-back configuration. We find that the BER performance of single-mode VCSELs is better than the one obtained with multimode VCSELs when the off-state current is smaller than the threshold current. The same result is obtained when the off-state current is larger than the threshold value, providing that the on-state current is large enough. However, BER in single-mode VCSELs is greater than in multimode VCSELs when the off-state current is equal to the threshold current. BER performance is also better for multimode VCSELs when the off-state current is larger than the threshold value, if the on-state current is small enough. View full abstract»

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  • Simultaneous enhancement of the second- and third-harmonic generations in one-dimensional semiconductor photonic crystals

    Publication Year: 2006 , Page(s): 447 - 452
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (256 KB) |  | HTML iconHTML  

    We report on observation of simultaneous strong enhancements of second-harmonic generation (SHG) and third-harmonic generation (THG) in visible spectra region in a one-dimensional ZnSe-ZnMgS semiconductor photonic crystal. These enhancements come from phase matching and a high density of modes near the photonic band edge. Our result shows that the THG is due to direct χ(3) process instead of the cascaded two-step χ(2) process. Measured forward SH conversion efficiency close to 1% for only a few microns thick film demonstrates potential device applications. Theoretical calculations are in good agreement with the experimental measurements. View full abstract»

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  • Table of contents

    Publication Year: 2006 , Page(s): 453 - 454
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    Freely Available from IEEE
  • [Front cover]

    Publication Year: 2006 , Page(s): 455
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics publication information

    Publication Year: 2006 , Page(s): 456
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2006 , Page(s): 457
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    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

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Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University