By Topic

Selected Topics in Quantum Electronics, IEEE Journal of

Issue 6 • Date Nov.-Dec. 2005

Filter Results

Displaying Results 1 - 20 of 20
  • Table of contents

    Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (87 KB)  
    Freely Available from IEEE
  • IEEE Journal of Selected Topics in Quantum Electronics publication information

    Page(s): c2
    Save to Project icon | Request Permissions | PDF file iconPDF (62 KB)  
    Freely Available from IEEE
  • Introduction to the Issue on Optoelectronic Materials and Processing and Nanostructures

    Page(s): 1245 - 1247
    Save to Project icon | Request Permissions | PDF file iconPDF (79 KB)  
    Freely Available from IEEE
  • A fully packaged 4×4 integrated optical switch matrix

    Page(s): 1248 - 1254
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (520 KB)  

    This paper describes a packaged and fiber array coupled 4×4 optical crosspoint switch designed for optical packet switching. Alignment and fixation techniques of two perpendicular fiber arrays to the integrated InP-based switch chip have been developed. Thermal management is also included in the packaging. The packaged devices demonstrate long-term stability and have been used in switch modules, including the packaged device and electronic interfaces. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Intimate monolithic integration of chip-scale photonic circuits

    Page(s): 1255 - 1265
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (464 KB)  

    In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 ×300 μm footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 μm on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Focused ion beam-based fabrication of nanostructured photonic devices

    Page(s): 1266 - 1277
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (968 KB)  

    This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits

    Page(s): 1278 - 1283
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (408 KB)  

    We monolithically integrated polycrystalline GaAs metal-semiconductor-metal (MSM) photoconductive switches with a completely fabricated Si-CMOS amplifier and obtained a properly functional optical receiver, without altering the Si circuit performance. To our knowledge, this is the first time a fully monolithic on-chip integration has been achieved. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nonselective Wet Oxidation of AlGaAs Heterostructure Waveguides Through Controlled Addition of Oxygen

    Page(s): 1284 - 1291
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (266 KB)  

    We present data showing that the addition of trace amounts of O _2 ( \ll 1\hbox {%} relative to N _2 ) to N _2+ H _2 O process gas during the wet thermal oxidation of Al _ x Ga _1 -x As enhances the oxidation rates of lower Al content ( x\le 0.8) alloys (a tenfold increase for  x=0.3 ), while decreasing the oxidation rate selectivity  R( x=0.8)/ R( x=0.3) by a factor of seven. An increase in the refractive index from 1.49 to 1.68, and a fourfold decrease in surface roughness, indicates the formation of a denser, higher quality oxide for  x=0.3 AlGaAs. Oxides are characterized by prism coupling, atomic force microscopy, and scanning electron microscopy. Thermochemical calculations show a probable mechanism in the enhancement of the dry oxidation reactions of AlGaAs for low levels of O _2 , while there is still an adequate quantity of H _2 produced to reduce As oxides in the wet oxidation process. An AlGaAs quantum well heterostructure p-n laser diode crystal is nonselectively oxidized to create a deep oxide, high-index contrast waveguide with potential applications in semiconductor photonic integrated circuits that require small bend radius, high isolation, low crosstalk optical waveguides. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication

    Page(s): 1292 - 1298
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (337 KB)  

    Recent photonic device structures, including distributed Bragg reflectors (DBRs), one-dimensional (1-D) or two-dimensional (2-D) photonic crystals, and surface plasmon devices, often require nanoscale lithography techniques for their device fabrication. Focused ion beam (FIB) etching has been used as a nanolithographic tool for the creation of these nanostructures. We report the use of FIB etching as a lithographic tool that enables sub-100-nm resolution. The FIB patterning of nanoscale holes on an epitaxially grown GaAs layer is characterized. To eliminate redeposition of sputtered materials during FIB patterning, we have developed a process using a dielectric mask and subsequent dry etching. This approach creates patterns with vertical and smooth sidewalls. A thin titanium layer can be deposited on the dielectric layer to avoid surface charging effects during the FIB process. This FIB nanopatterning technique can be applied to fabricate optoelectronic devices, and we show examples of 1-D gratings in optical fibers for sensing applications, photonic crystal vertical cavity lasers, and photonic crystal defect lasers. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Full text access may be available. Click article title to sign in or learn about subscription options.
  • 2006 Bipolar/BiCMOS Circuits and Technology Meeting

    Page(s): 1300
    Save to Project icon | Request Permissions | PDF file iconPDF (651 KB)  
    Freely Available from IEEE
  • 2006 IEEE International SOI Conference

    Page(s): 1301
    Save to Project icon | Request Permissions | PDF file iconPDF (142 KB)  
    Freely Available from IEEE
  • Call for papers on solid state lighting

    Page(s): 1302
    Save to Project icon | Request Permissions | PDF file iconPDF (111 KB)  
    Freely Available from IEEE
  • IEEE/OSA Journal of Display Technology

    Page(s): 1303
    Save to Project icon | Request Permissions | PDF file iconPDF (438 KB)  
    Freely Available from IEEE
  • IEEE Lasers & Electro-Optics Society DVD Journal Collection (1965–2002)

    Page(s): 1304
    Save to Project icon | Request Permissions | PDF file iconPDF (70 KB)  
    Freely Available from IEEE
  • IEEE order form for reprints

    Page(s): 1305
    Save to Project icon | Request Permissions | PDF file iconPDF (354 KB)  
    Freely Available from IEEE
  • Explore IEL IEEE's most comprehensive resource [advertisement]

    Page(s): 1306
    Save to Project icon | Request Permissions | PDF file iconPDF (341 KB)  
    Freely Available from IEEE
  • 2005 Index

    Page(s): 1307 - 1336
    Save to Project icon | Request Permissions | PDF file iconPDF (366 KB)  
    Freely Available from IEEE
  • IEEE Journal of Selected Topics in Quantum Electronics Information for authors

    Page(s): c3
    Save to Project icon | Request Permissions | PDF file iconPDF (35 KB)  
    Freely Available from IEEE
  • [Blank page - back cover]

    Page(s): c4
    Save to Project icon | Request Permissions | PDF file iconPDF (4 KB)  
    Freely Available from IEEE

Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
John Cartledge
Queen's University