Issue 1 • Date Jan. 2006
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Table of contents
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PDF (56 KB)
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IEEE Transactions on Electron Devices publication information
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Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
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PDF (816 KB)
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Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs
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Interpretation of current flow in photodiode structures using laser beam-induced current for characterization and diagnostics
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Evidence for bulk trap generation during NBTI phenomenon in pMOSFETs with ultrathin SiON gate dielectrics
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Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices
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A novel high-κ SONOS memory using TaN/Al2O3/Ta2O5/HfO2/Si structure for fast speed and long retention operation
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PDF (352 KB)
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An effective single-trap-level model for the proton-induced semi-insulating substrates
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PDF (280 KB)
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Monte Carlo simulation of substrate enhanced electron injection in split-gate memory cells
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PDF (496 KB)
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Impact of high tunneling electric fields on erasing instabilities in NOR flash memories
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PDF (296 KB)
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Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique
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Studies of the reverse read method and second-bit effect of 2-bit/cell nitride-trapping device by quasi-two-dimensional model
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Characterization of oxide trap energy by analysis of the SILC roll-off regime in flash memories
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PDF (464 KB)
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Loop-based inductance extraction and modeling for multiconductor on-chip interconnects
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Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors
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PDF (424 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


