Issue 11 • Date Nov. 2005
Filter Results
Displaying Results 1 - 25 of 28
-
Table of contents
|
PDF (50 KB)
-
IEEE Electron Device Letters publication information
|
PDF (63 KB)
-
-
50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz
|
PDF (392 KB)
-
-
Improved device performance and reliability in high κ HfTaTiO gate dielectric with TaN gate electrode
|
PDF (184 KB)
-
Integrated high-κ (κ ∼19) MIM capacitor with Cu/low-κ interconnects for RF application
|
PDF (264 KB)
-
Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
|
PDF (200 KB)
-
-
200-mm wafer-scale transfer of 0.18-μm dual-damascene Cu/SiO2 interconnection system to plastic substrates
|
PDF (1176 KB)
-
New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity
|
PDF (400 KB)
-
Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays
|
PDF (128 KB)
-
-
Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
|
PDF (264 KB)
-
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
|
PDF (192 KB)
-
-
-
-
A novel split-gate MOSFET design realized by a fully silicided gate process for the improvement of transconductance and output resistance
|
PDF (336 KB)
-
Implementation of perfect-magnetic-coupling ultralow-loss transformer in RFCMOS technology
|
PDF (608 KB)
-
-
-
IEEE Electron Devices Society meetings calendar for 2005
|
PDF (1134 KB)
-
IEEE Electron Device Letters Information for authors
|
PDF (39 KB)
-
Call for papers on advanced compact models and 45-nm modeling challenges
|
PDF (559 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


