# IEEE Transactions on Nanotechnology

## Filter Results

Displaying Results 1 - 25 of 29

Publication Year: 2005, Page(s):c1 - c4
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• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2005, Page(s): c2
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• ### High-performance carbon nanotube field-effect transistor with tunable polarities

Publication Year: 2005, Page(s):481 - 489
Cited by:  Papers (278)  |  Patents (50)
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State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we... View full abstract»

• ### Self-assembly of uniform nanoporous silica fibers

Publication Year: 2005, Page(s):490 - 494
Cited by:  Papers (31)  |  Patents (1)
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Self-assembly of nanoporous silica shapes is of great interest for modern nanotechnology because of uniform pore size, simplicity, and low cost of production. However, there are two major problems that prevent broad use of the self-assembly process. First, the process brings too broad a variety of the assembled shapes. Secondly, the yield of the desired shapes is far from 100%. Here, we describe a... View full abstract»

• ### A coherent extension of the transport equations in semiconductors incorporating the quantum correction-part I: single-particle dynamics

Publication Year: 2005, Page(s):495 - 502
Cited by:  Papers (5)
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The aim of the investigation is to consistently incorporate quantum corrections in the transport model for applications to nanoscale semiconductor devices. This paper is comprised of two parts. Part I derives a set of two semiclassical equations in which the dynamics of the dispersion of the single-particle wave function is accounted for in addition to that of the expectation value of position. Th... View full abstract»

• ### A coherent extension of the transport equations in semiconductors incorporating the quantum correction. Part II. Collective transport

Publication Year: 2005, Page(s):503 - 509
Cited by:  Papers (5)
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For part I see ibid., vol.4, p.495 (2005). The aim of this investigation is to consistently incorporate quantum corrections in the transport model for applications to nanoscale semiconductor devices. This paper is made of two parts. In Part I, a set of two semiclassical equations were derived, in which the dynamics of the dispersion of the single-particle wave function is accounted for in addition... View full abstract»

• ### Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

Publication Year: 2005, Page(s):510 - 516
Cited by:  Papers (61)  |  Patents (1)
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In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET) are investigated by using a three-dimensional quantum correction simulation. Taking several important electrical characteristics as evaluation criteria, two different nanowire FinFETs, the surrounding-gate and omega-shaped-gate devices, are examined and compared with respect to different ratios of the ... View full abstract»

• ### Importance of multiple-phonon interactions in molecular dissociation and nanofabrication using optical near fields

Publication Year: 2005, Page(s):517 - 522
Cited by:  Papers (12)  |  Patents (1)
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A quasi-particle (exciton-phonon polariton) model, as a simple model of an optical near-field probe, is proposed to investigate an unresolved problem in photochemical processes, i.e., why a vapor molecule can be dissociated by an incident photon with less energy than the dissociation energy only if, not a propagating far field, but an optical near field is used, and what is the mechanism leading t... View full abstract»

• ### Coercivity Variation in Ni$_80$Fe$_20$Ferromagnetic Nanowires

Publication Year: 2005, Page(s):523 - 526
Cited by:  Papers (5)
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Deep ultraviolet lithography was used to fabricate highly ordered 80-nm-thick Ni$_80$Fe$_20$nanowire arrays over a large area (4$,times,$4 mm$^2$). The magnetic properties of the wire array display a marked increase in both the coercivity and switching field due to magnetic shape anisotropy compared with the bulk film. The angular variation of the coerci... View full abstract»

• ### New complementary logic circuits using coupled open quantum systems

Publication Year: 2005, Page(s):527 - 532
Cited by:  Papers (2)
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This paper present new complementary logic circuits that exploit an intrinsic bistability in nanoscale coupled open quantum systems such as wells and wires. When operated with a multiple-phase split-level clocking scheme, the device can latch a binary digit while meeting gain, tolerance, and I/O decoupling requirements at the same time, which was difficult with conventional back-to-back negative d... View full abstract»

• ### Optimization of single-gate carbon-nanotube field-effect transistors

Publication Year: 2005, Page(s):533 - 538
Cited by:  Papers (7)
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The performance of Schottky-barrier carbon-nanotube field-effect transistors (CNTFETs) critically depends on the device geometry. Asymmetric gate contacts, the drain and source contact thickness, and inhomogenous dielectrics above and below the nanotube influence the device operation. An optimizer has been used to extract geometries with steep subthreshold slope and high Ion/Ioff View full abstract»

• ### Synthesis and characterization of Ni-P-CNT's nanocomposite film for MEMS applications

Publication Year: 2005, Page(s):539 - 547
Cited by:  Papers (28)  |  Patents (4)
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An electroless phosphorus nickel-carbon nanotube (Ni-P-CNT) nanocomposite film synthesis and related process for microelectromechanical systems device fabrication have been successfully developed and presented in this paper. With a special acid oxidative method, a well-dispersed nickel-CNT's colloidal solution has been produced without any aggregation, which is very suitable for microstructure fab... View full abstract»

• ### Modeling and experimental validation of sharpening mechanism based on thermal oxidation for fabrication of ultra-sharp silicon nanotips

Publication Year: 2005, Page(s):548 - 556
Cited by:  Papers (7)
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This paper aims at modeling the thermal oxidation of silicon pillars leading to the formation of very sharp silicon tips. The model is used to determine optimum process parameters with respect to the initial shape of the silicon pillars and the geometry of the desired tip. The modeling concept is to extend a previous approach, which predicts the oxidation mechanism of silicon cylinders versus thei... View full abstract»

• ### Ballistic transport and electrostatics in metallic carbon nanotubes

Publication Year: 2005, Page(s):557 - 562
Cited by:  Papers (28)  |  Patents (2)
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We calculate the current and electrostatic potential drop in metallic carbon nanotube wires self-consistently by solving the Green's function and electrostatics equations in the ballistic case. About one-tenth of the applied voltage drops across the bulk of a nanowire, independent of the lengths considered here. The remaining nine-tenths of the bias drops near the contacts, thereby creating a nonl... View full abstract»

• ### Modeling quantum transport under AC conditions: application to intrinsic high-frequency limits for nanoscale double-gate Si MOSFETs

Publication Year: 2005, Page(s):563 - 569
Cited by:  Papers (3)
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An approach for studying the performance of phase-coherent devices under high-frequency conditions is presented. Quantum predictions on cutoff frequencies are obtained by directly solving the time-dependent Schrodinger equation under oscillating potential profiles at frequencies comparable with the inverse of the electron transit time. As an example, the small-signal admittance parameters for a si... View full abstract»

• ### Dielectrophoretic assembly of carbon nanofiber nanoelectromechanical devices

Publication Year: 2005, Page(s):570 - 575
Cited by:  Papers (10)
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We report a technique for the assembly of bottom-up nanomechanical devices. This technique employs the dielectrophoretic manipulation of nanostructures within a multiple layer lithography process. Mechanical resonators were specifically produced by assembling and clamping tubular carbon fibers onto prefabricated pads. Our preliminary results showed that an assembled cantilevered fiber with length ... View full abstract»

• ### Broad-band frequency characterization of double Y-branch nanojunction operating as room-temperature RF to DC rectifier

Publication Year: 2005, Page(s):576 - 580
Cited by:  Papers (16)
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Room-temperature dc and broad-band high-frequency (HF) to dc conversion measurements of a double Y-branch junction (YBJ) are presented and discussed. Nonlinear dc characteristics of the devices at room temperature are observed and HF to dc conversion up to 40 GHz at room temperature is presented. The HF to dc conversion efficiency degradation is found to be partly due to losses in interconnects fe... View full abstract»

• ### A new 40-nm SONOS structure based on backside trapping for nanoscale memories

Publication Year: 2005, Page(s):581 - 587
Cited by:  Papers (15)  |  Patents (3)
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Silicon-on-nothing (SON) devices have been analyzed for the first time in view of nanoscaled nonvolatile memories (NVM) applications. Two reliable steady states have been demonstrated using backside charge trapping in the nitride layer under the channel as a memory effect in a 40-nm gate-length pMOS silicon-oxide-nitride-oxide-silicon device realized with SON technology. Low voltages (∼3 V) ar... View full abstract»

• ### COSMOS-a novel MOS device paradigm

Publication Year: 2005, Page(s):588 - 593
Cited by:  Papers (2)
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Downscaling alone is not sufficient to sustain the development of CMOS devices, and further paradigm shifts are necessary. In this paper, we argue such a shift is possible and show through technology computer-aided design simulations that a symmetrically operating CMOS device pair may be built under a single gate structure by a surprisingly simple choice of device layout and channel engineering pa... View full abstract»

• ### A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation

Publication Year: 2005, Page(s):594 - 598
Cited by:  Papers (7)
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SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p+-substrate for the first time. The phosphorous-doped SiGe forms the n+-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p+ electrode. The diodes show... View full abstract»

• ### Quantum interference in fully depleted tri-gate quantum-wire transistors-the role of inelastic scattering

Publication Year: 2005, Page(s):599 - 604
Cited by:  Papers (5)
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Within the next decade, it is predicted that we will reach the limits of silicon scaling as it is currently defined. Of the new devices under investigation, one of the most promising is the tri-gate quantum-wire transistor. In this paper, we study the role quantum interference plays in the operation of this device both in the ballistic and quasi-ballistic regimes. We find that, in the ballistic ca... View full abstract»

• ### "Videolized" atomic force microscopy for interactive nanomanipulation and nanoassembly

Publication Year: 2005, Page(s):605 - 615
Cited by:  Papers (67)
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The main problem in nanomanipulation and nanoassembly using atomic force microscopy (AFM) is its lack of real-time visual feedback during manipulation. Fortunately, this problem has been solved by our recently developed augmented reality system, which includes real-time force feedback and real-time "videolized" visual feedback. Through the augmented reality interface, the operator can monitor real... View full abstract»

• ### Image analysis and modeling of spherical and channel microstructures of fuel-cell materials

Publication Year: 2005, Page(s):616 - 631
Cited by:  Papers (4)
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The development of novel fuel-cell materials demands accurate and flexible microstructure characterization techniques. Conventional electron microscopy-based microstructural morphology analysis is carried out through the conceptual interpretation of transmission electron microscope images. With this method, only qualitative information on material morphologies can usually be obtained. This paper p... View full abstract»

• ### Photoluminescence of colloidal CdSe/ZnS quantum dots under oxygen atmosphere

Publication Year: 2005, Page(s):632 - 636
Cited by:  Papers (26)
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The effects of oxygen versus vacuum ambients on colloidal CdSe/ZnS quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The PL intensities were found to be an order of magnitude higher in an oxygen atmosphere, which is explained by the passivation of surface defects by oxygen absorption. The decay of PL intensities can be best fitted by a bie... View full abstract»

• ### Resonant electron tunneling through azurin in air and liquid by scanning tunneling microscopy

Publication Year: 2005, Page(s):637 - 640
Cited by:  Papers (4)
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Electron transfer through the redox metalloprotein azurin immobilized on Au (111) by its disulphide bridge is studied by scanning tunneling microscopy (STM) in buffer solution and (for the first time) in air. STM analysis gives evidences of a stable and robust binding of the molecules in both cases. Bright spots, associated with azurin molecules, are clearly visible in STM images. The image contra... View full abstract»

## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.