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Proceedings of the IEEE

Issue 9 • Date Sept. 2005

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Displaying Results 1 - 18 of 18
  • [Front cover]

    Publication Year: 2005 , Page(s): c1
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  • Put your technology leadership in writing

    Publication Year: 2005 , Page(s): c2
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  • Table of contents

    Publication Year: 2005 , Page(s): 1517
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  • Proceedings of the IEEE publication information

    Publication Year: 2005 , Page(s): 1518
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  • Special Issue on Silicon Germanium—Advanced Technology, Modeling, and Design

    Publication Year: 2005 , Page(s): 1519 - 1521
    Cited by:  Papers (1)  |  Patents (1)
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  • Scaling of SiGe Heterojunction Bipolar Transistors

    Publication Year: 2005 , Page(s): 1522 - 1538
    Cited by:  Papers (36)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (801 KB) |  | HTML iconHTML  

    Scaling has been the principal driving force behind the successful technology innovations of the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction bipolar transistors (HBTs), which have recently emerged as a strong contender for RF and mixed-signal applications. The impacts of scaling on key performance metrics such as speed and noise are explored, and both t... View full abstract»

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  • Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

    Publication Year: 2005 , Page(s): 1539 - 1558
    Cited by:  Papers (43)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1032 KB) |  | HTML iconHTML  

    We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, ... View full abstract»

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  • On the Potential of SiGe HBTs for Extreme Environment Electronics

    Publication Year: 2005 , Page(s): 1559 - 1582
    Cited by:  Papers (94)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (981 KB) |  | HTML iconHTML  

    "Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200&d... View full abstract»

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  • Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

    Publication Year: 2005 , Page(s): 1583 - 1597
    Cited by:  Papers (37)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (595 KB) |  | HTML iconHTML  

    This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (fT), low base resistance (rb), and high current gain (β) using Si processing underlies the low... View full abstract»

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  • SiGe Radio Frequency ICs for Low-Power Portable Communication

    Publication Year: 2005 , Page(s): 1598 - 1623
    Cited by:  Papers (14)  |  Patents (4)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2278 KB)  

    The range and impact of SiGe bipolar and BiCMOS technologies on wireless transceivers for portable telephony and data communications are surveyed. SiGe technology enables transceiver designs that compare favorably with competing technologies such as RF CMOS or III-Vs, with advantages in design cycle time and performance versus cost. As wireless devices continue to increase in complexity using conv... View full abstract»

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  • Design and Compliance Testing of a SiGe WCDMA Receiver IC With Integrated Analog Baseband

    Publication Year: 2005 , Page(s): 1624 - 1636
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1211 KB) |  | HTML iconHTML  

    A 2.7-3.3 V 32-mA SiGe direct-conversion wide-band code division multiple access (WCDMA) receiver IC integrating the RF front-end and analog baseband on a single chip has been completed and measured. Analog performance specifications for the design were driven by the 3GPP specifications. To close the loop from 3GPP specifications to IC design specifications to hardware performance results, a subse... View full abstract»

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  • Integrated Phased Array Systems in Silicon

    Publication Year: 2005 , Page(s): 1637 - 1655
    Cited by:  Papers (52)  |  Patents (6)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2793 KB) |  | HTML iconHTML  

    Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrate... View full abstract»

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  • Smart Phased Array SoCs: A Novel Application for Advanced SiGe HBT BiCMOS Technology

    Publication Year: 2005 , Page(s): 1656 - 1668
    Cited by:  Papers (20)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (661 KB) |  | HTML iconHTML  

    As BiCMOS IC technology continues to advance in scaling and performance, new applications are continually enabled. One such concept is a smart phased array system on a chip (SoC). The combination of high-performance SiGe heterojunction bipolar transistor (HBT) bipolar devices, well-characterized RF/analog passive components, and dense CMOS digital technology provides the capability to create large... View full abstract»

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  • SiGe HBT Microprocessor Core Test Vehicle

    Publication Year: 2005 , Page(s): 1669 - 1678
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1676 KB) |  | HTML iconHTML  

    A major impediment to the continuation of Moore's Law in the years to come is the performance of interconnections in ICs at high frequencies. Microprocessors are using a greater portion of their clock cycle charging and discharging interconnections. Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) provide a fast track technology for the exploration of the effect of interconnectio... View full abstract»

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  • Electrical Engineering Hall of Fame: Greenleaf W. Pickard

    Publication Year: 2005 , Page(s): 1679 - 1681
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1344 KB) |  | HTML iconHTML  

    In 1926, the Institute of Radio Engineers (IRE) awarded its Medal of Honor to Greenleaf Whittier Pickard. The award was in recognition of his contributions to research on crystal detectors, antennas, wave propagation, and noise suppression. During his long career, he was a leader in the creation of the radio engineering profession and a prolific author of research papers published in the Proceedin... View full abstract»

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  • Future Special Issues/Special Sections of the IEEE Proceedings

    Publication Year: 2005 , Page(s): 1682 - 1684
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  • IEEE Member Digital Library [advertisement]

    Publication Year: 2005 , Page(s): c3
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  • Proceedings of the IEEE check out our October issue

    Publication Year: 2005 , Page(s): c4
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Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University