Issue 9 • Date Sept. 1987
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[Front cover and table of contents]
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PDF (213 KB)
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Characterization of heterostructure complementary MISFET circuits employing the new gate current model
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PDF (952 KB)
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Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy
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PDF (1224 KB)
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Analysis of MODFET microwave characteristics
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PDF (960 KB)
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A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modeling
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PDF (912 KB)
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Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit
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PDF (1152 KB)
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[Back cover]
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PDF (209 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


