IEEE Transactions on Electron Devices

Issue 5 • May 1987

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Displaying Results 1 - 25 of 45
  • [Front cover and table of contents]

    Publication Year: 1987, Page(s): c1
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    Freely Available from IEEE
  • Threshold field and peak-valley velocity ratio in short samples of InP at 300 K

    Publication Year: 1987, Page(s):953 - 956
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    The transient and steady-state velocity-field characteristics of InP at 300 K are calculated for short samples by using a Monte Carlo model. It is found that the threshold field for negative differential resistance increases with a decrease in the sample length, but the peak-valley velocity ratio is almost independent of the sample length. View full abstract»

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  • Degradation mechanism of Ti/Au and Ti/Pd/Au gate metallizations in GaAs MESFET's

    Publication Year: 1987, Page(s):957 - 960
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (608 KB)

    Modifications of several dc parameters of GaAs MESFET's induced by accelerated aging at 300 °C have been investigated in a test pattern configuration. Two different gate metallization structures have been examined, namely GaAs/Ti/Au and GaAs/Ti/Pd/Au. The gate diode and the MESFET characteristics of the former degrade noticeably upon annealing, while they are less affected by the thermal trea... View full abstract»

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  • Electrical switching speed of the double-heterostructure optoelectronic switch

    Publication Year: 1987, Page(s):961 - 965
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (664 KB)

    The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to the RC pull-up time. View full abstract»

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  • A potentially low-noise avalanche diode microwave amplifier

    Publication Year: 1987, Page(s):966 - 972
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (840 KB)

    A sequence of AlGaAs, GaAs heterojunctions can be used to generate a series of potential steps that are just large enough to accelerate conduction-band electrons to energies above the impact-ionization threshold while valence-band holes do not obtain this much energy. The smaller difference in the valence-band heterojunction discontinuity and the higher scattering rate for holes than conduction-ba... View full abstract»

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  • Theory of electron conduction in the double-heterostructure optoelectronic switch (DOES)

    Publication Year: 1987, Page(s):973 - 984
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1104 KB)

    In this paper a theory is developed for the double heterostructure optoelectronic switching device (DOES). The DOES is a new optoelectronic device in which the optical output can be switched with either an electrical or an optical input. It may be regarded as an LED or laser that has been combined internally with an electrical switching device. The device may be triggered from its OFF-state (high ... View full abstract»

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  • Quasi-two-dimensional modeling of GaAs MESFET's

    Publication Year: 1987, Page(s):985 - 991
    Cited by:  Papers (42)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (760 KB)

    A numerical simulation of GaAs MESFET structures is presented. The approach taken in this paper combines an analytical solution with a full simulation. Poisson's equation, the current continuity equation, and an electron-temperature equation are formulated in terms of a geometry factor that defines the shape of the conducting channel in the MESFET. The transport equations are then solved in one di... View full abstract»

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  • Theoretical analysis of the layer design of inverted single-channel heterostructure transistors

    Publication Year: 1987, Page(s):992 - 1000
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (888 KB)

    In this paper the inverted heterostructure transistor is analyzed using a self-consistent model for calculation of the electron concentration and spatial distribution in the quantum well. The (In,Ga)As/(Al,Ga) As material system is considered in particular. The objective of the study is to design a transistor with a high channel electron concentration and a short gate-to-channel distance. It furth... View full abstract»

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  • GaAs MESFET interface considerations

    Publication Year: 1987, Page(s):1001 - 1007
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (888 KB)

    Various properties of GaAs MESFET's are discussed in terms of the basic physics of interfaces and deep levels. Fermi-level pinning is shown to lead to hole injection from a positively biased metal lying in direct contact with semi-insulating GaAs. This hole injection is partially responsible for low-frequency oscillations in GaAs MESFET's. Backgating and low-frequency oscillations are shown to be ... View full abstract»

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  • Two-dimensional thermal oxidation of silicon—I. Experiments

    Publication Year: 1987, Page(s):1008 - 1017
    Cited by:  Papers (121)  |  Patents (19)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1464 KB)

    With continued miniaturization and the development of new devices, the highly nonuniform oxidation of two-dimensional non-planar silicon structures is playing an increasingly important role. An understanding of this subject has been limited by insufficient experimental data and difficulties in two-dimensional numerical simulation. This paper introduces a unique experimental approach in which exten... View full abstract»

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  • Metallization by ionized cluster beam deposition

    Publication Year: 1987, Page(s):1018 - 1025
    Cited by:  Papers (1)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1792 KB)

    Preferentially oriented and epitaxial Al films have been deposited by ionized cluster beams (ICB). The thermal stability of these films has been examined by SEM, AES, ion backscattering, and electrical characterization. In preferentially oriented films, long electromigration lifetime and low-temperature contact formation are expected. In epitaxial films on silicon, alloy penetration at the interfa... View full abstract»

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  • Sputtered Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrier

    Publication Year: 1987, Page(s):1026 - 1032
    Cited by:  Papers (4)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (936 KB)

    Ni2P is a metallic conductor with a bulk resistivity of 32 µΩ . cm. Films of Ni2P can be sputter-deposited in both the amorphous and crystalline forms by varying the sputtering parameters. The amorphous to crystalline transition has been found to take place at about 250 °C and sufficient grain growth to exhibit X-ray reflections takes place by 400 °C. In b... View full abstract»

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  • A new analytical model of the "Bird's beak"

    Publication Year: 1987, Page(s):1033 - 1038
    Cited by:  Papers (7)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (552 KB)

    The numerical simulation of technological processes is very important for the fabrication of integrated circuits. The authors have developed the two-dimensional simulator OSIRIS allowing the simulation of ion implantation and redistribution of dopants in silicon. An original analytical model for oxide growth has been developed that gives very good simulation of the "bird's beak" of SEMIROX structu... View full abstract»

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  • Development of a new self-aligning contact technology

    Publication Year: 1987, Page(s):1039 - 1045
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1008 KB)

    A self-aligning contact process (SACMOS) for MOS/VLSI technology is described. A new technique involving submerged implant into the source and drain is employed. This enables the enhanced oxidation of the previously heavily doped polysilicon gate compared to the more lightly doped source and drain. The implant also provides the source and drain extensions. During oxidation, silicon nitride pads pr... View full abstract»

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  • Millimeter-wave bulk unipolar mixer diodes

    Publication Year: 1987, Page(s):1046 - 1051
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (704 KB)

    The use of a bulk unipolar camel diode as a mixing element is considered. A diode of this type is shown to have a conversion loss of between 7 and 8 dB over the frequency range 27 to 35 GHz, with a similar SSB noise figure. View full abstract»

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  • Smear reduction in the interline CCD image sensor

    Publication Year: 1987, Page(s):1052 - 1056
    Cited by:  Papers (22)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (952 KB)

    An undesirable smear in a vertical-overflow-drain interline CCD image sensor (VOD IL-CCD) has been analyzed. This smear has been reduced by using a new structure. The main cause of the smear was identified, using an experimental linear CCD image sensor, as light leakage, i.e., oblique incident light effect, concave lens effect, diffraction effect, and waveguide effect, To reduce the light-leakage ... View full abstract»

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  • Surface-depleted photoconductors

    Publication Year: 1987, Page(s):1057 - 1060
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    Photoconductors with channels that lie in the surface depleted region of a GaAs epitaxial structure are described. These devices have microampere photocurrent at saturation conditions under 0.3 mW illumination and exhibit photoconductive gain. The dark current is in the nanoampere range and the noise equivalent power is of the order of 10-12W/√Hz. In contrast to other photoconduct... View full abstract»

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  • BJT—MOSFET transconductance comparisons

    Publication Year: 1987, Page(s):1061 - 1065
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (544 KB)

    Through normalization it becomes possible to construct curves of considerable generality for comparing the transconductance properties of BJT's and MOSFET's. Three comparisons are given. The first presents transconductance as a function of output current; the second, transconductance divided by output current as a function of input voltage; and the third, transconductance as a function of input vo... View full abstract»

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  • A study of channel avalanche breakdown in scaled n-MOSFET's

    Publication Year: 1987, Page(s):1066 - 1073
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (976 KB)

    The behavior of channel avalanche breakdown in n-MOSFET's miniaturized by isothermal constant field scaling is examined. Both a first-order analytical estimate and a rigorous two-dimensional numerical simulation of electrically wide devices are used to understand the scaling of channel breakdown. A sublinear dependence of snapback and sustaining voltages on channel length is found and explained. I... View full abstract»

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  • MINIMOS 3: A MOSFET simulator that includes energy balance

    Publication Year: 1987, Page(s):1074 - 1078
    Cited by:  Papers (30)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    We present a model for hot carrier transport which is implemented in the device simulator MINIMOS 3. A brief resume of the model is given. We present various results which were calculated with this new model. We show that the I-V characteristics of a MOSFET can be calculated from Leff= 10 µm down to Leff= 0.9 µm with one parameter set. Modifications of carrier and c... View full abstract»

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  • Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's

    Publication Year: 1987, Page(s):1079 - 1083
    Cited by:  Papers (10)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (680 KB)

    The dependence of hot-carrier effects on channel length and stress-bias voltage in hydrogen-passivated accumulation-mode p-channel polycrystalline-Si MOSFET's operating in the saturation region has been studied, Before stress, these devices exhibit a minimum value of current at VGS≈ 0 V but as VGSincreases above 0 V, they show an increase in (leakage) current due to fie... View full abstract»

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  • A 90-GHz double-drift IMPATT diode made with Si MBE

    Publication Year: 1987, Page(s):1084 - 1089
    Cited by:  Papers (13)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (992 KB)

    For the first time silicon double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy. The n-type layers are grown at 750 °C on low-resistivity n+-type substrates followed by p-type layers at 650 °C. The highly doped p+-layers are grown by solid-phase epitaxy in the MBE system. Device design is made for CW operation in W-band. The materia... View full abstract»

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  • The transient integral charge control relation—A novel formulation of the currents in a bipolar transistor

    Publication Year: 1987, Page(s):1090 - 1099
    Cited by:  Papers (50)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (968 KB)

    The present paper describes the transient integral charge control (TICC) relation. This term designates a formula describing the emitter, base, and collector terminal currents of a bipolar junction transistor (BJT) for a one-dimensional current flow. The relation holds for dc as well as for transient bias conditions, and basically can be regarded as a more general formulation of Gummel's charge co... View full abstract»

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  • Flicker (1/f) noise generated by a random walk of electrons in interfaces

    Publication Year: 1987, Page(s):1100 - 1115
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1456 KB)

    Flicker noise can be generated by a random walk of mobile electrons in interfaces via interface states. It is proposed that these electrons interact with surface phonons to form polarons, which have very low mobilities. The flicker-noise model is a general one and may be used to explain flicker noise on MOSFET's, clean Si surfaces, metallic resistors, grain boundaries, amorphous layers, electron t... View full abstract»

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  • "Soft" energy thresholds in impact ionization: A classical model

    Publication Year: 1987, Page(s):1116 - 1120
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (488 KB)

    A new simplified approach to the problem of "soft" threshold energy in impact ionization in semiconductors is presented. The model used is entirely classical and leads to a simple exact formula for the ionization rate as a function of energy. This result is used as the basis for modifying the "lucky drift" model of impact ionization, as has been done previously for other models of the "soft" thres... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it