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Electron Device Letters, IEEE

Issue 5 • Date May 1986

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Displaying Results 1 - 22 of 22
  • [Front cover and table of contents]

    Publication Year: 1986 , Page(s): c1
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    Freely Available from IEEE
  • Numerical analysis of heavy ion particle-induced CMOS latch-up

    Publication Year: 1986 , Page(s): 273 - 275
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (304 KB)  

    Heavy ion particle-induced CMOS latch-up is analyzed using a two-dimensional transient numerical simulator. The charge funneling effect during the carrier collection process is found to lower the parasitic bipolar emitter-base potential barrier. This parasitic bipolar action is the main factor initiating latch-up. Latch-up susceptibility is then examined as a parameter of the heavy ion particle incident condition. View full abstract»

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  • XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

    Publication Year: 1986 , Page(s): 276 - 278
    Cited by:  Papers (67)  |  Patents (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (240 KB)  

    Mo-gate n-channel poly-Si thin-film transistors (TFT's) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate. TFT's were fabricated in the crystallized Si film. The channel mobility of the TFT was 180cm2/V.s when the a-Si:H was crystallized by annealing with a laser having an energy density of 200 mJ/cm2. This result shows that high-speed silicon devices can be fabricated at a low temperature using XeCl excimer laser annealing. View full abstract»

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  • High-speed, low-power, implanted-buried-oxide CMOS circuits

    Publication Year: 1986 , Page(s): 279 - 281
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (352 KB)  

    CMOS ring oscillators with channels less than 1/2 µm long were fabricated in implanted-buried-oxide, silicon-on-insulator films using direct-write electron-beam lithography. Transistors with polysilicon gate lengths as short as 0.4 µm and effective channel lengths as short as 0.21 µm operate satisfactorily. Ring oscillators have delays per gate of 52 and 83 ps and power-delay products of 55 and 5 femtojoules for supply voltages of 5 and 3.3 V, respectively. View full abstract»

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  • Limited reaction processing: In-situ metal—oxide—semiconductor capacitors

    Publication Year: 1986 , Page(s): 282 - 284
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (296 KB)  

    Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics. View full abstract»

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  • Focused ion beam microsurgery for electronics

    Publication Year: 1986 , Page(s): 285 - 287
    Cited by:  Papers (2)  |  Patents (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (448 KB)  

    Methods of making and breaking connections on an Al conductor test pattern using a focused ion beam (FIB) are demonstrated. Submicrometer dimension connections between crossing conductors separated by oxide were fabricated in 7 s. Resistances of the connections were measured to be 3 Ω and were tested up to 50 mA. Milled cuts in 0.65- µm-thick 10-µm-wide conductors produced open-circuit resistances > 20 MΩ in 300 s. The combined imaging, restructuring, and verification capability of FIB microsurgery is shown. View full abstract»

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  • Determination of carrier saturation velocity in high-performance InyGa1-yAs/AlxGa1-xAs modulation-doped field-effect transistors (0 ≤ y ≤ 0.2)

    Publication Year: 1986 , Page(s): 288 - 290
    Cited by:  Papers (12)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (392 KB)  

    We describe a new method for determining the carrier saturation velocity υsatin modulation-doped field-effect transistors (MODFET's). High-performance pseudomorphic InyGA1-yAs/AlGaAs MODFET's (0 ≤ y ≤ 0.20) grown by MBE were tested, and the dependence of υsaton InAs mole fraction y was obtained. It was found that each device with y > 0 had a higher υsatthan a conventional GaAs/ AIGaAs MODFET (y = 0). Further, we believe that there is an optimum InAs mole fraction such that υsatis maximized. A pseudomorphic MODFET structure optimizing υsatmay also optimize overall device performance. View full abstract»

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  • Increase in barrier height of Al/n-GaAs contacts induced by high current

    Publication Year: 1986 , Page(s): 291 - 293
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (320 KB)  

    High forward-gate current (HFGC) density induces an increase of the Al/n-GaAs barrier height from 0.8 to 0.96 eV, thus suggesting the formation of an GaxAl1-xAs layer at the interface. Results show that this interaction is more enhanced by the electron current from the semiconductor to the metal than by thermal treatments. The intense electron flow is believed to contribute to the breaking of the interfacial oxide layer present at the metal-semiconductor interface, thus promoting Al/GaAs interdiffusion. Data were obtained on power MESFET's with Al metallized gate. View full abstract»

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  • Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure

    Publication Year: 1986 , Page(s): 294 - 295
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (240 KB)  

    The ac noise temperature and diffusion coefficient of the quasi-two-dimensional electron gas in an ungated AlGaAs/GaAs MODFET structure were measured as a function of electric field at T = 300 K. Noise temperture data can be used in the modeling of MODFET noise behavior. The diffusion coefficient of the two-dimensional (2-D) electron gas is found to be less field dependent than that of bulk GaAs. View full abstract»

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  • Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

    Publication Year: 1986 , Page(s): 296 - 298
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    InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APD's) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APD's exhibit low dark current and good quantum efficiency. The pulse response exhibits the two-component response typical of the SAM-APD structure. The slow component is 6 ns and the fast component is 100 ps. View full abstract»

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  • Excimer laser projection lithography on a full-field scanning projection system

    Publication Year: 1986 , Page(s): 299 - 301
    Cited by:  Papers (1)  |  Patents (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (520 KB)  

    Optical projection lithography using an excimer laser light source is demonstrated on a commercial state-of-the-art full-wafer scanning 1x projection system. Images are printed on 125-mm-diameter wafers on a Perkin-Elmer Model 500 projection printer using an XeCl laser operating at 308 nm. Near-vertical image profiles and 1-µm resolution are experimentally demonstrated. The anamorphic optical transformation system necessary to transform the collimated, nearly rectangular excimer laser beam into the arc-shaped, effectively self-luminous illumination required by the projection system is also described. View full abstract»

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  • Effects of high electrical-field stressing on hall mobility and carrier concentration in MOSFET's

    Publication Year: 1986 , Page(s): 302 - 305
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB)  

    The effect of high field stress on inversion layer mobility and carrier concentration in MOSFET's was studied by the use of Hall effect measurements at 77 and 298 K. The results show that Coulomb scattering by the increased interface charges causes mobility degradation. The near-threshold results are also consistent with the carrier fluctuation model. The mobility degradation is the most severe at low bias and low temperature. In contrast to former speculations made by a few investigators, Hall measurement results showed no decrease of mobile carrier concentration at the same effective gate bias in the entire bias range investigated. The mobility degradation is found to be strongly dependent on the gate oxide thickness of samples subjected to the same stress charges. View full abstract»

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  • Voltage discharge of light sensors in CCD imaging devices

    Publication Year: 1986 , Page(s): 306 - 307
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    A generalized solution of the current equation for photosensors in CCD imagers during the charge collecting process is presented. It is applicable to p-n step functions and p-n induced junctions (MOS sensors), and it includes the effects of illumination, thermal generation, and physical and electrical characteristics of light sensor. View full abstract»

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  • Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's

    Publication Year: 1986 , Page(s): 308 - 310
    Cited by:  Papers (19)  |  Patents (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB)  

    We report enhancement- and depletion-mode p-channel modulation-doped field-effect transistors (FET's) in Si. Si/GexSi1-xheterostructures were grown by molecular-beam epitaxy (MBE) with one-dimensional confinement of holes at the heterostructure interfaces. Transconductances of 2.5 and 3.2 mS/mm were measured at 300 K for enhancement- and depletion-mode devices, respectively, in good agreement with transistor modeling predictions for p-channel devices using measured material parameters. View full abstract»

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  • A new channel-doping technique for high-voltage depletion-mode power MOSFET's

    Publication Year: 1986 , Page(s): 311 - 313
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    A new channel-doping technique for high-voltage depletion-mode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V. View full abstract»

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  • A MOS Transistor with self-aligned polysilicon source—drain

    Publication Year: 1986 , Page(s): 314 - 316
    Cited by:  Papers (6)  |  Patents (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB)  

    A new MOS transistor with self-aligned polysilicon source-drain (SAPSD) is demonstrated. Using a thin implant-doped polysilicon layer above the active channel region, a shallow source-drain junction with negligible leakage is realized. A novel lightly doped-drain (LDD) structure is also incorporated by diffusing dopants from the n+ polysilicon source-drain layer into the silicon substrate, forming the n- region. During the gate oxidation, a sidewall spacer is simultaneously formed by the oxidation of polysilicon source-drain sidewalls. The transistor layout area is saved by bringing the source-drain contacts onto the field oxide region. Experimental results of the new structure are presented. View full abstract»

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  • InP-metal barrier junctions with improved I-V characteristics

    Publication Year: 1986 , Page(s): 317 - 319
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB)  

    A new contact for FET gate deposition, whose technology is similar to that for MESFET's, is demonstrated in InP. We have measured a significant reduction in reverse leakage current achieving JR= 1 × 10-3A/cm-2at 300 K at -2 V and an improved forward turn-on voltage, enhanced from 0.25 to 1.0 V at 300 K compared to conventional Schottky barriers on InP. We have used this barrier to form the gate of n-channel FET's in InP. View full abstract»

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  • Low-resistance ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As modulation-doped structures obtained by halogen lamp annealing

    Publication Year: 1986 , Page(s): 320 - 323
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB)  

    The successful application of short-term halogen lamp annealing to form ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/ In0.53Ga0.47As modulation-doped structures is demonstrated. Use of Ti in the electron-beam evaporated metallization scheme and a two-step annealing cycle give contacts with reproducibly good electrical and morphological characteristics. Minimum values of specific contact resistance \rho_{c} = 4.0 \times 10^{-7} and 6.0 \times 10^{-7} Ω.cm2for AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As, respectively, are measured. Corresponding values of the transfer resistance Rcare 0.12 ± 0.02 and 0.18 ± 0.05 Ω.mm. These values are the lowest achieved with lamp annealing and are comparable to the best obtained with transient furnace annealing. View full abstract»

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  • Radiation-hardened silicon-on-insulator complementary junction field-effect transistors

    Publication Year: 1986 , Page(s): 324 - 326
    Cited by:  Papers (8)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB)  

    The effects of total-dose radiation have been investigated for complementary junction field-effect transistors fabricated in zone-melting recrystallized Si films on SiO2-coated Si substrates. With a - 5-V bias applied to the Si substrate during irradiation and device operation, both n- and p-channel devices show low threshold-voltage shift (<-0.09 and <-0.12 V, respectively), low leakage currents (<- 1- and <3-pA/µm channel width, respectively) and small transconductance degradation (<15 percent) for total doses up to 108rad (Si). View full abstract»

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  • A three-dimensional static RAM

    Publication Year: 1986 , Page(s): 327 - 329
    Cited by:  Papers (8)  |  Patents (39)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (400 KB)  

    A three-dimensional (3-D) 256-bit static random-access memory (RAM) with double active layers has been fabricated by using the laser recrystallization technique. Memory cells were located in a bottom active layer with an NMOS configuration and peripheral circuits were arranged in a top active layer with a CMOS configuration. Both active layers were connected by 112 via holes. The chip and cell sizes were 2.6 × 1.9 mm2and 50 × 70 µm2, respectively. The memory operation was observed with a supply voltage from 4 to 8 V. The shortest address access time of 42 ns was obtained at the supply voltage of 8 V. View full abstract»

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  • Avalanche gain in GexSi1-x/Si infrared waveguide detectors

    Publication Year: 1986 , Page(s): 330 - 332
    Cited by:  Papers (18)  |  Patents (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (320 KB)  

    Avalanche gain in GexSi1-x/Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a GexSi1-x/Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device. View full abstract»

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  • [Back cover]

    Publication Year: 1986 , Page(s): c4
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    Freely Available from IEEE

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