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Electron Device Letters, IEEE

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Electron Device Letters, IEEE

Issue 9 • Date Sept. 1985

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[Front cover and table of contents]

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors

A consistent nonisothermal extension of the Scharfetter—Gummel stable difference approximation

Hot-carrier memory effect in an Al/SiN/SiO2/Si MNOS diode due to electrical stress

Hot-electron-induced MOSFET degradation at low temperatures

Noise behavior of 1-µm gate-length modulation-doped FET's from 10^-2to 10⁸Hz

18.5-dB Gain at 18 GHz with a GaAs permeable base transistor

A novel numerical model for SOI devices

High-barrier Al/p-Si Schottky diodes

A proposed planar junction structure with near-ideal breakdown characteristics

Fixed charge density and inversion layer mobility of thin gate oxides

Very short gate-length GaAs MESFET's

Analysis of electron trapping location in gated and ungated inverted-structure HEMT's

High-temperature rapid thermal nitridation of silicon dioxide for future VLSI applications

Specific contact resistivity of TiSi2to P⁺and n⁺junctions

Performance of CMOS devices in silicon-on-sapphire films after solid-phase epitaxial growth with rapid electron-beam heating

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