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IEEE Electron Device Letters

Issue 8 • Date Aug. 1985

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1985, Page(s): c1
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    Freely Available from IEEE
  • 1—2-keV Boron implants into silicon

    Publication Year: 1985, Page(s):397 - 399
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    1000-Å-A thick heavily doped layers have been produced in Si by implanting B at energies as low as 1-2 keV. No preamorphization is required and the near-surface random peak is redistributed by diffusion into the deeper channeled region to provide sharp junctions. Doping levels of ∼ 2 × 1020cm-3can be maintained over a region ∼600-Å-thick while maint... View full abstract»

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  • Vertical bipolar transistors in laser-recrystallized polysilicon

    Publication Year: 1985, Page(s):400 - 402
    Cited by:  Papers (4)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB)

    Vertical bipolar n-p-n transistors with a base width of 0.2 µm have been fabricated in laser-recrystallized polysilicon films on thermally oxidized silicon substrates. With proper hydrogen annealing steps, common-emitter current gains on the order of 100 were possible. Recombination in the base-emitter space-charge region was found to be the dominant source of base current. View full abstract»

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  • Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor

    Publication Year: 1985, Page(s):403 - 404
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    Electron transport efficiency of an InGaAs/InP hot-electron transistor (HET) is determined by a Monte Carlo method including alloy scattering in an InGaAs base. Results are compared with those of a GaAs/AlGaAs HET. It is found that the InGaAs/InP HET offers a higher current gain than that of a GaAs/AlGaAs HET by an order of magnitude. View full abstract»

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  • Silicon point contact concentrator solar cells

    Publication Year: 1985, Page(s):405 - 407
    Cited by:  Papers (16)  |  Patents (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 µm thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/cm2(30-300 "suns"). Efficiency peaked at 23 percent at 11 W/... View full abstract»

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  • Unframed contacts using refractory metals

    Publication Year: 1985, Page(s):408 - 409
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    Unframed contacts are extremely useful for high density integrated circuits because they decrease the metal interconnection line pitch in contrast to framed vias where the metal frames around the vias or contact openings require a minimum design rule spacing between the frame edges and adjacent lines. A method is described for making unframed or nonoverlapping metal contacts to silicon junction re... View full abstract»

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  • High-barrier Schottky diodes on p-type silicon due to dry-etching damage

    Publication Year: 1985, Page(s):410 - 412
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    It is known that the barrier height of Schottky diodes made to dry-etched silicon surfaces deviate from the barrier height values obtained for diodes fabricated on wet chemically etched or cleaved silicon. This effect, in cases where neither a substantial residue layer nor a surface film is formed, can be exploited to yield diodes on p-type Si that display barrier enhancement together with excelle... View full abstract»

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  • The effect of MOS Channel length on the performance of insulated gate transistors

    Publication Year: 1985, Page(s):413 - 415
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    The effect of MOS channel length on n-channel 600-V insulated gate transistors (IGT's) is evaluated. When the channel length was decreased from 1.9 to 0.8 µm, a doubling of the forward conduction current was measured at a forward drop of 2 V for IGT's with a turn-off time of 2 µs. Also, a better forward drop versus turnoff time tradeoff were observed. However, a 25-50-percent decrease in... View full abstract»

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  • A three-dimensional photoresist image simulator: TRIPS-I

    Publication Year: 1985, Page(s):416 - 418
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    A simulator for a three-dimensional (3-D) photoresist image formation on flat substrates has been developed. Named Three-Dimensional Resist Imaging Process Simulator-I (TRIPS-I), the simulator consists of three subsimulators: one for the two-dimensional (2-D) distribution of projected light intensity, one for 3-D photosensitizer concentration distribution, and one for 3-D photoresist development. ... View full abstract»

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  • Cell geometry effect on IGT latch-up

    Publication Year: 1985, Page(s):419 - 421
    Cited by:  Papers (18)  |  Patents (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    The effect of the emitter cell geometry on insulated gate transistor (IGT) performance has been investigated. The three-dimensional well resistances (emitter shunting resistance) of the square, circular, stripe, and multiple surface short (MSS) have been calculated. The MSS cell geometry has the lowest emitter shunting resistance. As a result, MSS cell has the highest latch-up current capability. ... View full abstract»

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  • Memory SEU simulations using 2-D transport calculations

    Publication Year: 1985, Page(s):422 - 424
    Cited by:  Papers (37)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    An advance in the simulation of a single event upset (SEU) of a static memory is achieved by combining transport and circuit effects in a single calculation. The program SIFCOD [4] is applied to the four transistors of a CMOS SRAM cell to determine its transient circuit response following a very high energy ion hit. Results unique to this type of calculation include determination of relative upset... View full abstract»

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  • Minority-carrier diffusion coefficients and mobilities in silicon

    Publication Year: 1985, Page(s):425 - 427
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    A new method for accurate measurement of minority-carrier diffusion coefficients in silicon is described. The method is based on a direct measurement of the minority-carrier transit time through a narrow region of the p-n junction diode. The minority-carrier mobility is obtained from the diffusion coefficient using the Einstein relation. The method is demonstrated on low-doped n- and -p-type Si (d... View full abstract»

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  • Temperature dependence of backgating effect in GaAs integrated circuits

    Publication Year: 1985, Page(s):428 - 430
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    The backgating effect in GaAs IC's has been found to be temperature dependent. The threshold voltage for backgating increases with temperature, resulting in lower backgating at higher temperatures. The measured activation energy of the backgating threshold versus temperature is 83 meV, in agreement with the energy difference between the Fermi level and the EL2 level at the surface of semi-insulati... View full abstract»

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  • Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors

    Publication Year: 1985, Page(s):431 - 433
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (216 KB)

    A balanced two-step current transport theory, i.e., thermionic emission followed by Shockley diffusion, is applied to study the emitter-base (EB) potential spike energy in the AlGaAs/GaAs single-heterojunction bipolar transistor. It is found, surprisingly, that when the transistor is operated in the active region the I-V characteristics of the collector curre... View full abstract»

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  • A new model for modulation-doped FET's

    Publication Year: 1985, Page(s):434 - 436
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    A new study showing that Lehovec and Zuleeg analysis for silicon FET's can be extended to the GaAs FET's is presented. An analytical model that effectively predicts the characteristics of the MODFET is introduced. The agreement between the model and the experimental data appears to be very good. View full abstract»

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  • Use of a TiN barrier to improve GaAs FET ohmic contact reliability

    Publication Year: 1985, Page(s):437 - 438
    Cited by:  Papers (3)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    We have used a reactively sputtered TiN diffusion barrier to prevent interpenetration of a (Ni)GeAuPt ohmic contact layer and Ti/Pt/Au overlay on GaAs devices baked at 250-300°C in air. Planar GaAs MESFET's and TLM patterns were fabricated and iteratively tested and baked. Devices without TiN showed severe degradation in morphology and dc and RF performance. Devices with TiN remained essentia... View full abstract»

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  • [Back cover]

    Publication Year: 1985, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Editor-in-Chief

Tsu-Jae King Liu
tking@eecs.berkeley.edu