Electron Devices, IEEE Transactions on
Issue 7 • Date July 1985
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Displaying Results 1 - 25 of 38
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[Front cover and table of contents]
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PDF (239 KB)
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Performance of Carbon monoxide-sensitive MOSFET's with metal-Oxide semiconductor gates
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PDF (440 KB)
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A vapor-sensitive chemiresistor fabricated with planar microelectrodes and a Langmuir-Blodgett organic semiconductor film
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PDF (576 KB)
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Remote fiber-optic biosensors based on evanescent-excited fluoro-immunoassay: Concept and progress
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PDF (592 KB)
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Theoretical considerations in the design of integrated semiconductor sensors applying electrets
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PDF (656 KB)
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MOS Integrated silicon pressure sensor
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PDF (752 KB)
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A polyimide-based capacitive humidity sensor
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PDF (544 KB)
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A MoSi
2 Schottky diode for bipolar LSI's |
PDF (1920 KB)
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Preprocessor modeling of parameter and geometry dependences of short and narrow MOSFET's for VLSI circuit simulation, optimization, and statistics with SPICE
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PDF (672 KB)
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A simple and continuous MOSFET model
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PDF (472 KB)
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GaAs FET RF switches
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PDF (648 KB)
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Computation of electron and hole quasi-Fermi levels in polycrystalline silicon films under uniform illumination and zero bias
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PDF (608 KB)
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Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurements
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PDF (800 KB)
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An Hg
0.3 Cd0.7 Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm |
PDF (424 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
