IEEE Electron Device Letters

Issue 4 • April 1984

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1984, Page(s): c1
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    Freely Available from IEEE
  • Proposed vertical-type amorphous-silicon field-effect transistors

    Publication Year: 1984, Page(s):105 - 107
    Cited by:  Papers (10)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    Novel amorphous-silicon field-effect transistors (a-Si FET's) with a vertical channel have been proposed and demonstrated for the first time. The channel length of the new FET's is not limited by the photoetching process and thus can be reduced a great deal. Prototype FET's with a channel length of 1 µm had an on-off current ratio of more than 104and the on-resistance was proportio... View full abstract»

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  • An n-channel MOSFET with Schottky source and drain

    Publication Year: 1984, Page(s):108 - 111
    Cited by:  Papers (1)  |  Patents (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    An n-channel MOSFET with Schottky source and drain (SBMOSFET) has been successfully fabricated using tantalum for the Schottky electrodes. For long gatelengths (100 µm), there are no significant differences in the characteristics of these SBMOSFET's compared to those of conventional MOSFET's. A significant current reduction is observed in SBMOSFET's having 10-µm gatelengths, however, due... View full abstract»

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  • Charge-packet-initiated switching of metal—tunnel-oxide—silicon (MTOS) junctions

    Publication Year: 1984, Page(s):112 - 114
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    We report the switching of a bistable metal-tunnel-oxide-silicon (MTOS) junction from a low-current state to a high-current state by the insertion of a charge packet of minority carriers from a charge-coupled device input structure. For the 33-Å tunnel oxide reported in this letter, a switching threshold of 630 pC for a 40 mils2device area was observed. The transient switching time... View full abstract»

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  • Static random access memory using high electron mobility transistors

    Publication Year: 1984, Page(s):115 - 117
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    A 4-bit fully decoded static random access memory (RAM) has been designed and fabricated using high electron mobility transistors (HEMT's) with a direct-coupled FET logic approach. The circuit incorporates approximately 50 logic gates. A fully operating memory circuit was demonstrated with an access time of 1.1 ns and a minimum WRITE-enable pulse of less than 2-ns duration at room temperature. Thi... View full abstract»

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  • A flip-chip GaAs power FET with gate and drain via connections

    Publication Year: 1984, Page(s):118 - 120
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    A new microwave device format that combines flip-chip mounting and via-connection technologies is described. This approach avoids many of the compromises that are inherent in conventional microwave monolithic circuits and will be particularly important in power applications. This letter reviews the rationale for this device format and describes a new method of forming via connections through thick... View full abstract»

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  • Self-aligned InP p-n junction diodes fabricated with ³He+bombardment

    Publication Year: 1984, Page(s):121 - 122
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    p-n junction diodes have been defined in epitaxially grown InP layers with3He+ bombardment. The3He+ ions have been used to convert the exposed portions of the p-layers into semi-insulating regions (p = 109Ω.cm). I-V characteristics with good rectification and reverse currents of ≅ 200 nA at -2 V have been obtained. This simple self-aligned and planar iso... View full abstract»

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  • Bias dependence of capacitances in modulation-doped FET's at 4 GHz

    Publication Year: 1984, Page(s):123 - 125
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    Scattering-parameter measurements were made on 1.0- µm gate normally-on and 1.6-µm gate normally-off modulation-doped field-effect transistors (MOD/FET's) as a function of bias at 4 GHz. A maximum oscillation frequency of 38 GHz, which is about 8 GHz larger than that for a comparable GaAs MESFET, due to larger transconductances for the MODFET's, was obtained. The input capacitance was fo... View full abstract»

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  • Ion implantation of Boron in GaAs MESFET's

    Publication Year: 1984, Page(s):126 - 128
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    The quality of the GaAs substrate plays a major role in MESFET performance for devices fabricated by direct ion implantation of silicon atoms into liquid-encapsulated Czochralski (LEC) material. High-energy (270-keV)11B+ implantation was used to improve the silicon impurity distribution near the substrate interface, reduce substrate effects, and produce a more abrupt interface. Since cu... View full abstract»

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  • Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

    Publication Year: 1984, Page(s):129 - 131
    Cited by:  Papers (10)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    The first modulation-doped (Al,Ga)As/GaAs field-effect transistors (MODFET's) have been fabricated using a self-aligned ion-implantation process. Measured extrinsic transconductances of 190 mS/mm were achieved at 300 K with source resistances of 1 Ω.mm. The highest currents yet reported for such device structures, in excess of 350 mA/mm, were obtained. A value of the maximum two-dimensional e... View full abstract»

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  • [Back cover]

    Publication Year: 1984, Page(s): c4
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    Freely Available from IEEE

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Tsu-Jae King Liu
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