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IEEE Transactions on Electron Devices

Issue 11 • Nov. 1984

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Displaying Results 1 - 24 of 24
  • [Front cover and table of contents]

    Publication Year: 1984, Page(s): c1
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  • Foreword

    Publication Year: 1984, Page(s): 1521
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  • Foreword

    Publication Year: 1984, Page(s): 1522
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  • The path to the conception of the junction transistor

    Publication Year: 1984, Page(s):1523 - 1546
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3440 KB)

    The failure in 1945 of experiments proposed by Shockley, on what today would be called thin-film field-effect transistors, was a creative failure that stimulated Bardeen in early 1946 to propose that a surface-state shield blocked the field from the semiconductor's interior. Bell Laboratories' "transistor group to be" for the next eighteen months focused, not on practical, but on scientific aspect... View full abstract»

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  • Czochralski silicon

    Publication Year: 1984, Page(s):1547 - 1549
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    When silicon technology was new there were effects and observations which went unused or unrecognized in the rush to get products to market. This paper covers one such set of observations in silicon crystal growth. It has been abstracted from a historical perspective of silicon processing being compiled for family and associates from the experiences of the author. View full abstract»

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  • Evolution of the MOSFET dynamic RAM—A personal view

    Publication Year: 1984, Page(s):1549 - 1555
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (928 KB)

    The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of ¼ µm channel length and minimum lithography dimension is projected. View full abstract»

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  • Ultra-large scale integration

    Publication Year: 1984, Page(s):1555 - 1561
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB)

    Ultra-large scale integration is governed by a hierarchical matrix of limits. The levels of this hierarchy can be codified as 1) fundamental, 2) material, 3) device, 4) circuit, and 5) system. Each level includes both theoretical and practical as well as analogical limits. Theoretically, thermal fluctuations impose a fundamental limit of several kT on switching energy. Scattering limited velocity ... View full abstract»

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  • Semiconductor industry in Japan—past and present

    Publication Year: 1984, Page(s):1562 - 1570
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1608 KB)

    This paper provides an overview of the Japanese semiconductor industry. In the first part, a history of the industry from the very beginning is described. Some unique features of the industry, like consumer orientation, vertical integration, and scale efficiency, are examined. In the second part, the present status of the industry is examined with some emphasis on very large-scale integrated devic... View full abstract»

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  • The evolution of power device technology

    Publication Year: 1984, Page(s):1570 - 1591
    Cited by:  Papers (71)  |  Patents (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3296 KB)

    Power semiconductor devices and their associated technology have come a long way from their beginnings with the invention of the bipolar transistor in the late 1940's. Presently, the spectrum of what are referred to as "power devices" span a very wide range of devices and technology from the massive 4 in, 3000-A thyristor to the high-voltage integrated circuit and the power MOSFET, a device of VLS... View full abstract»

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  • Foreword

    Publication Year: 1984, Page(s): 1592
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  • Recollections of pre-world war II magnetrons and their applications

    Publication Year: 1984, Page(s):1593 - 1595
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    The magnetron development work at Westinghouse Research Laboratories in the years 1929 to 1934 and at RCA from 1934 to 1938 is described. The Westinghouse work led to internal-circuit magnetrons with powers on the order of 1W at 9-cm wavelength, and detectable power down to 1.6 cm. A complete microwave relay system using searchlight mirrors was built and demonstrated at the Chicago "Century of Pro... View full abstract»

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  • The microwave magnetron and its derivatives

    Publication Year: 1984, Page(s):1595 - 1605
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2960 KB)

    The history of the microwave magnetron and the various crossed-field devices that have evolved from it is reveiwed from the time of the invention of the multicavity magnetron during World War II to the present time from the viewpoint of one who has been continuously involved as an observer and contributor. Special attention is given to the contributions of many individuals that led to the maturiza... View full abstract»

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  • History of the Kaiser—Aiken, thin cathode ray tube

    Publication Year: 1984, Page(s):1605 - 1608
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (880 KB)

    The concept of the Thin Cathode Ray Tube is described as a goal-directed invention rather than a flash of intuition. The basic problem was to scan the CRT face by some method other than the angular deflection of the standard CRT, with its large conical volume. The method adopted was to bring the beam on a path parallel to the phosphor screen until it was close to the required screen position, and ... View full abstract»

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  • Commentary on the Aiken thin CRT

    Publication Year: 1984, Page(s):1608 - 1609
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    First Page of the Article
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  • Fascinating tubes

    Publication Year: 1984, Page(s):1609 - 1611
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    The author describes his involvement with electron tubes (valves) from the 1920's through to the present day, including his participation in the 1942 Bruneval raid. His concern is with the personalities, good and bad, of those in charge, more than with technical details. View full abstract»

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  • A young engineer enters the microwave tube field during world war II

    Publication Year: 1984, Page(s):1611 - 1613
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The author describes his wartime experience at the General Electric Research Laboratories, developing CW magnetrons for countermeasures, at the same time as others were developing the pulse magnetron for radar transmitters. View full abstract»

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  • The thin film transistor—A late flowering bloom

    Publication Year: 1984, Page(s):1614 - 1628
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4256 KB)

    The thin film transistor was the first solid-state amplifier ever patented, but has found no practical application until quite recently. The history of this device is traced from the early and unsuccessful Bell Labs experiments, through its brief resurgence in the 1960's as a competitor to the MOSFET; its second disappearance from public view followed by years of hibernation at Westinghouse Labs; ... View full abstract»

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  • Foreword

    Publication Year: 1984, Page(s): 1629
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  • Heterostructure lasers

    Publication Year: 1984, Page(s):1630 - 1642
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1912 KB)

    The demonstration of CW room temperature operation of the heterostructure laser was the beginning of a new era in semiconductor devices. This era introduced the use of heterojunctions to create electrical as well as optical boundaries. New developments in epitaxial techniques provided the base for heterojunction devices. This work describes the interdisciplinary research effort that lead to the br... View full abstract»

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  • III-V compound semiconductor devices: Optical detectors

    Publication Year: 1984, Page(s):1643 - 1655
    Cited by:  Papers (26)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1496 KB)

    This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in si... View full abstract»

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  • The beginning of integrated optoelectronic circuits

    Publication Year: 1984, Page(s):1656 - 1661
    Cited by:  Papers (18)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    The monolithic integration of electronic and optical functions on a single semiconductor crystal has become known as integrated optoelectronic circuits. These circuits usually contain a semiconductor laser and the associated driver electronics, detection and current amplication, or combine these two functions in an optical repeater. Monolithic integration leads to smaller circuits, greater ruggedn... View full abstract»

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  • New high-speed III-V devices for integrated circuits

    Publication Year: 1984, Page(s):1662 - 1667
    Cited by:  Papers (1)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1224 KB)

    This paper traces the research and development steps that led to selectively doped heterostructure transistors and integrated circuits. The transistor is the fastest switching transistor known, whereas integrated circuits built with the device outperform all other circuits of equivalent function. The work began with studies of GaAs optical spectroscopy at low temperatures using (Al, Ga)As-GaAs-(Al... View full abstract»

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  • New electronic phenomena based on multilayer epitaxy

    Publication Year: 1984, Page(s):1667 - 1672
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1360 KB)

    New electronic phenomena have been demonstrated with structures that contain multiple layers of different semiconductor materials. Many of these phenomena are based on quantum confinement and tunnelling of carriers. The development of the molecular-beam epitaxy and metal-organic chemical vapor deposition techniques have made preparation of these structures possible. The new phenomena include quant... View full abstract»

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  • [Back cover]

    Publication Year: 1984, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it