IEEE Transactions on Electron Devices

Issue 6 • June 1983

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Displaying Results 1 - 25 of 36
  • [Front cover and table of contents]

    Publication Year: 1983, Page(s): c1
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    Freely Available from IEEE
  • Changes in the editorial board

    Publication Year: 1983, Page(s):557 - 558
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    First Page of the Article
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  • Analytical model and characterization of small geometry MOSFET's

    Publication Year: 1983, Page(s):559 - 566
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    Electrical characteristics of small geometry p-channel and n-channel MOSFET's are characterized based on an analytical model that includes short-channel, narrow-channel, and carrier-velocity-saturation effects. Theoretical results on threshold voltage, threshold-voltage shift by a substrate bias voltage, and drain current are in good agreement with the experimental results over wide ranges of chan... View full abstract»

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  • Monte Carlo simulation of a millimeter-wave Gunn-effect relaxation oscillator

    Publication Year: 1983, Page(s):566 - 571
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A large-signal computer simulation of a GaAs millimeter-wave Gunn-effect relaxation oscillator has been developed. This computer simulation utilizes a Monte Carlo computation of the electron distribution behavior rather than relying on an analytical expression for the velocity-field characteristic now known to be inaccurate at millimeter-wave frequencies. Results of this simulation are presented f... View full abstract»

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  • A simplified model of short-channel MOSFET characteristics in the breakdown mode

    Publication Year: 1983, Page(s):571 - 576
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    When a short-channel MOSFET is driven into the avalanche-induced breakdown region, the drain current increases rapidly and usually shows a snapback characteristic. Both the substrate current and the current collected by a nearby reverse-biased p-n junction also increases with increasing drain current in this region of operation. All of these effects are associated with minority-carrier injection f... View full abstract»

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  • SEM-EBIC and traveling light spot diffusion length measurements: Normally irradiated charge-collecting diode

    Publication Year: 1983, Page(s):577 - 580
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    An analysis of the induced current in a normally irradiated diode by monochromatic light or a SEM electron beam is given, which can be used to determine the diffusion length. Two light sources are considered: a traveling light spot and uniform illumination with part of the sample containing the diode shadowed by a knife-edge mask. The diffusion length is determined by readily computed numerical ca... View full abstract»

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  • GaAs0.6P0.4LED's with efficient transparent contacts for spatially uniform light emission

    Publication Year: 1983, Page(s):580 - 585
    Cited by:  Papers (5)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    Indium-tin oxide (ITO) and cadmium-tin oxide (CTO) transparent contacts have been used on GaAs0.6P0.4planar, red-light-emitting diodes. The entire emitting area of the diode can be contacted without blocking any of that area with opaque metal. Furthermore, the low sheet resistance of the transparent conducting films (2.5 to 3.5 ω/□) makes the spatial distribution o... View full abstract»

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  • Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substrates

    Publication Year: 1983, Page(s):586 - 592
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    This paper presents the results of characterization of deep levels in ion-implanted layers on semi-insulating LEC GaAs substrates, using MESFET channel current DLTS and transient resistance techniques. Test devices on undoped substrates show six electron traps with activation energies ranging from 0.15 to 0.85 eV, and devices on lightly and heavily Cr-doped substrates show five-and two-electron tr... View full abstract»

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  • Current gain in polysilicon emitter transistors

    Publication Year: 1983, Page(s):593 - 597
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    The common-emitter current gain β in a shallow polysilicon emitter transistor is derived by solving the minority-carrier transport equation in the silicon-polysilicon structure. Coupled With the majority-carrier transport, an equation for the current gain is obtained which depends on the physical properties of the polysilicon as well as the silicon emitter and base doping profiles. The calcul... View full abstract»

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  • Mo2N/Mo gate MOSFET's

    Publication Year: 1983, Page(s):598 - 602
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    Molybdenum nitride coatings on molybdenum, from a direct reaction of molybdenum with ammonia, are used to improve the gate electrode properties of Mo gate self-aligned MOSFET's. A Mo2N double-layer gate shows resistance against oxidation and processing reagents, and improved ion-implantation masking. The work function of the double-layer film was determined to be 4.69 ± 0.03 eV, wh... View full abstract»

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  • Heating of solid targets by electron beams

    Publication Year: 1983, Page(s):602 - 608
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    The heating of a solid material by a high-energy electron beam is discussed. The two-dimensional transient nonlinear heat equation has been solved by the finite element method, considering both the penetration of the beam into the target and its finite size. The importance of the temperature dependences of each of the material properties on melt time have been established. Results are presented fo... View full abstract»

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  • Electron-bombarded semiconductor (EBS) switch

    Publication Year: 1983, Page(s):609 - 611
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    The swiching of an electron-bombarded semiconductor diode by means of forward bias is demonstrated. With development, such switches may be advantageous for high-power, high-frequency matrix switching. A theoretical argument indicates that isolation similar to that of optoelectronic diode switches without gain can be obtained. Isolation over 30 dB is observed in a simple experiment. View full abstract»

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  • The dV / dt capability of field-controlled thyristors

    Publication Year: 1983, Page(s):612 - 616
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (539 KB)

    A detailed analysis of thedV/dtcapability of field-controlled thyristors is presented. It is demonstrated for the first time thatdV/dtinduced turn-on can occur in these devices due to gate debiasing as a result of capacitive gate current flow if a large series gate resistance is present in the circuit. A theoretical analysis of thedV/dtcapability is presented based... View full abstract»

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  • Parameters of solar cell arrays

    Publication Year: 1983, Page(s):616 - 618
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (263 KB)

    This paper presents an analytically derived method of combining nonidentical solar cell parameters to obtain a single-exponential approximation for an array. It was assumed that the arrayI-Vequation is of the same form as that of the single cell. The array possesses two photocurrents: one at the open circuit voltage and the other depends on load current. View full abstract»

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  • Ideal FET doping profile

    Publication Year: 1983, Page(s):619 - 626
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (801 KB)

    Using variational calculus it is possible to show, for each MOSFET voltage and device topology, that there exists an ideal drain region doping profile which yields the optimum resistance versus breakdown voltage tradeoff. Because of the inclusion, in the resistance, of the effects of spreading resistance this profile tends to have a higher doping concentration (lower resistivity) at the blocking j... View full abstract»

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  • Energy-band distortion in highly doped silicon

    Publication Year: 1983, Page(s):626 - 634
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1104 KB)

    A plausible model for the doping dependences of the conduction-and valence-band shifts, and of the concomitant narrowings of the optical and electrical energy gaps, caused by high doping concentrations in silicon is developed by refining, extending, and combining previously described theories. A meaningful link is thereby established between the fundamental solid-state physics that underlies the e... View full abstract»

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  • Two-dimensional numerical analysis of the narrow gate effect in MOSFET

    Publication Year: 1983, Page(s):635 - 647
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1456 KB)

    Lateral variation of the local threshold voltage causes non-linearity in the drain conductance-gate voltage characteristics, resulting in a nonunique external threshold voltage which varies with gate voltage. Using a 16-bit minicomputer, a two-dimensional (2-D) finite-difference program for narrow gate MOSFET (NAROMOS), and an accurate and efficient new finite-difference boundary equation at the o... View full abstract»

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  • Optically controllable S-type negative resistance presented by a combinational connection of photocoupled FET's

    Publication Year: 1983, Page(s):647 - 652
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    A negative resistance circuit constructed with a combinational connection of photocoupled FET's is proposed, which indicates optically controlled S-type negative resistance characteristics. The circuit can be used as a reciprocal switching element with two external light inputs and an application to optoelectronic flip-flop operation is presented. Moreover, a bidirectional S-type negative resistan... View full abstract»

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  • An As-P(n+-n-)double diffused drain MOSFET for VLSI's

    Publication Year: 1983, Page(s):652 - 657
    Cited by:  Papers (41)  |  Patents (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    An As-P(n+-n-) double diffused drain is characterized as one of the most feasible device structures for VLSI's from the overall viewpoint of device design. This device makes good use of both As, suitable for microfabrication, and P, in realizing a graded junction. The feasibility of this double diffused drain is investigated comparing it with a conventional As drain over the ... View full abstract»

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  • A mobility model for carriers in the MOS inversion layer

    Publication Year: 1983, Page(s):658 - 663
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    A mobility model for carriers in the MOS inversion layer is proposed. The model assumes that mobility is a function of the gate and drain fields, and the doping density, which conforms to Thornber's scaling law. Two-dimensional computer simulation combined with the present mobility model can predict experimental drain current within an error of ± 5 percent. The present model is applicable and... View full abstract»

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  • Electron-beam lithography in n+self-aligned GaAs MESFET fabrication

    Publication Year: 1983, Page(s):663 - 668
    Cited by:  Papers (12)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1072 KB)

    An electron-beam direct-writing technology for the fabrication of short-channel n+sef-aligned (SAINT) GaAs MESFET's is discussed. A four-level multiresist which includes a thin Mo layer is developed to avoid charging in the semi-insulating GaAs substrate. The alleviation of short channel effects is experimentally demonstrated by reducing the n+layer depth. A ring oscillator w... View full abstract»

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  • A model for the relation between substrate and gate currents in n-channel MOSFET's

    Publication Year: 1983, Page(s):668 - 675
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    The gate current in n-channel MOSFET's normalized to the source current is expressed as a function of the substrate current normalized to the source current by means of an impact ionization model. The ratio of the electron mean free path for impact ionization to that for optical phonon scattering, which is the most important among the various related device parameters, is determined by indirect me... View full abstract»

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  • Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI's

    Publication Year: 1983, Page(s):675 - 680
    Cited by:  Papers (70)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (655 KB)

    A comparison of device characteristics of n-channel and p-channel MOSFET's is made from the overall viewpoint of VLSI construction. Hot-carrier-related device degradation of device reliability, as well as effective mobility, is elaborately measured for devices having effective channel lengths of 0.5-5 µm. From these experiments, it is found that hot-electron injection due to impact ionization... View full abstract»

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  • New grooved-gate MOSFET with drain separated from channel implanted region (DSC)

    Publication Year: 1983, Page(s):681 - 686
    Cited by:  Papers (23)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    A new grooved-gate MOSFET with its drain separated from channel implanted regions (DSC structure) is proposed for the purpose of obtaining higher breakdown voltages: drain sustaining voltage and highest applicable voltage placed by hot-carrier effects. Nonimplanted regions between channel implanted and source/drain regions are a unique feature of this device structure. The self-aligned nonimplante... View full abstract»

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  • Collection of charge from alpha-particle tracks in silicon devices

    Publication Year: 1983, Page(s):686 - 693
    Cited by:  Papers (93)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    Experimentally and by computer simulation, we have investigated the collection process of alpha-particle-generated charge in silicon devices. We studied the total charge collected and the transient characteristics of collection for various structures. Analytic results indicate that a strong drift field extends far beyond the original depletion layer, and funnels a large number of carriers into the... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it