IEEE Electron Device Letters

Issue 4 • April 1982

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1982, Page(s): c1
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    Freely Available from IEEE
  • A mask-programmable CCD digital memory

    Publication Year: 1982, Page(s):77 - 79
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    A mask-programmable digital CCD memory circuit has been designed, fabricated, and tested. This circuit uses a special, double implantation of impurities of opposite types into the region underneath selected storage electrodes to achieve nonvolatility. A 54-bit CCD, fabricated using standard p-channel MOS technology, was used to demonstrate restoration of lost data. View full abstract»

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  • Effects of subgrain boundaries on carrier transport in zone-melting-recrystallized Si films on SiO2-coated Si substrates

    Publication Year: 1982, Page(s):79 - 82
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (584 KB)

    The transport properties of zone-melting-recrystallized Si films on SiO2-coated Si substrates have been studied by the fabrication and characterization of thin-film resistors and n-channel MOSFET's. Subgrain boundaries, which are the predominant crystal defects in the films, have a relatively low trapping state density (7-8 × 1011cm-2) and low resistance. N-ch... View full abstract»

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  • New read-out mode in light-sensitive floating gate MOS Memory

    Publication Year: 1982, Page(s):83 - 85
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    A novel pulse read out operation in a light-sensitive floating gate MOS memory was studied experimentally. In this proposed operating mode, a floating source, pulsed gate voltage, and bias lighting are essential. It was found that both the positively and negatively modulated read signals for a same light input were obtained. The feature leads to an optical memory in which subtraction and correlati... View full abstract»

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  • A novel camel diode gate GaAs FET

    Publication Year: 1982, Page(s):86 - 88
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (352 KB)

    A novel device utilizing the "camel diode" in place of a Schottky barrier gate has been demonstrated in GaAs grown by molecular beam epitaxy (MBE). The devices have a 7.5 µm channel length, 3 µm gate length, and a 280 µm gate width. The layers from which the devices are fabricated consist of a 0.15 µm GaAs layer doped to a level of 1.5 × 1017cm-3to fo... View full abstract»

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  • Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperatures

    Publication Year: 1982, Page(s):89 - 90
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (232 KB)

    A new 32 × 63 element palladium-silicide Schottky-barrier IR-CCD device is described. The device can be operated from 40 to 140K and is sensitive in the 1.0 to 3.5 µm SWIR spectral range. A typical value of the quantum efficiency coefficient is 19.1%/eV. The photoelectric barrier height is 0.34 eV. View full abstract»

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  • Speed limitations due to interconnect time constants in VLSI integrated circuits

    Publication Year: 1982, Page(s):90 - 92
    Cited by:  Papers (37)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (336 KB)

    The RC time constants for various interconnect materials, including poly-Si, silicides, and Al, are compared with MOSFET speeds at near-micron and submicron design rules. It is found that for design rules below ∼ 2 µm, the rise time of Al interconnects one cm long can exceed the switching delay of state-of-the-art MOSFET circuits. This speed limitation becomes more severe as design rule... View full abstract»

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  • Self-biasing Josephson logic circuits

    Publication Year: 1982, Page(s):93 - 96
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (424 KB)

    A self-biasing network for Josephson logic circuits that permits wide variations in junction critical currents, resistors, and power supply voltage is presented. The self-biasing network automatically switches resistors in or out to make the gate currents track with the critical currents of the logic gates. Results of Monte Carlo statistical analyses of the tolerances of this scheme are presented ... View full abstract»

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  • Carrier injection and backgating effect in GaAs MESFET's

    Publication Year: 1982, Page(s):97 - 98
    Cited by:  Papers (55)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (296 KB)

    The relation between the backgating effects on GaAs MESFET's and current conduction in the semi-insulating substrate is studied. The onset voltage of the backgating effect is found to coincide with the trap-fill-limited voltage for the substrate conduction. This observation implies that carrier injection in the substrate is directly related to the backgating effect. View full abstract»

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  • Self-aligned ion implant masking for CMOS VLSI technology

    Publication Year: 1982, Page(s):99 - 100
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (464 KB)

    Conventional self-aligned ion implantation masking is often inadequate in CMOS VLSI fabrication. We describe a method of increasing this ion implant masking with minimal additional processing. Scanning electron micrographs portray the enhanced ion implant masking. View full abstract»

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  • Electron transport in avalanching GaAs diodes

    Publication Year: 1982, Page(s):101 - 102
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (296 KB)

    Magnetoresistance measurements on avalanching GaAs diodes lead to an estimate of 1.6 × 10-15sec for the scattering time of avalanching electrons at 300K. This is consistent with the time recently calculated by Monte Carlo techniques. It confirms that impact ionization by electrons in GaAs is initiated by carriers that make several collisions in the process rather than by ballistic ... View full abstract»

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  • Incoherent annealing of implanted layers in GaAs

    Publication Year: 1982, Page(s):102 - 103
    Cited by:  Papers (7)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (256 KB)

    Incoherent light from filament lamps focused by elliptical mirrors has been used to activate implanted layers in GaAs. 4 × 1014Si+cm-2and 2 × 1014Zn+cm-2implants were annealed with Si3N4deposited by CVD at 400°C providing a surface protective layer. By taking advantage of the focusing properties ... View full abstract»

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  • High-performance GaAs metal insulator semiconductor transistor

    Publication Year: 1982, Page(s):104 - 105
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (240 KB)

    Proton bombardment techniques have been used to fabricate GaAs metal insulator semiconductor transistors (MIST's) with good thermal stability and radiation hardened performance. Highly stable insulator layers have been obtained using both single-species (H1+) and multiple-species (H1+, H2+, O+, and OH+) beams. The device processing is compatible with fabrication of... View full abstract»

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  • Projected life-times of circuits in Krypton85contaminated packages

    Publication Year: 1982, Page(s):106 - 108
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    This article presents a Monte Carlo model which calculates the radiation dose absorbed by the oxide layers on the chip from the radioactivity level in a package. The simulation allows one to obtain the time of failure of a given circuit, based on the initial activity in the package and the radiation hardness of the circuit. The model includes the effects of β-particle energy spectrum, package... View full abstract»

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  • [Back cover]

    Publication Year: 1982, Page(s): c4
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    Freely Available from IEEE

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