IEEE Electron Device Letters

Issue 12 • Dec. 1981

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Displaying Results 1 - 7 of 7
  • [Front cover and table of contents]

    Publication Year: 1981, Page(s): c1
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  • A single step selective implantation technology for multiply doped layers using proximity annealing

    Publication Year: 1981, Page(s):309 - 311
    Cited by:  Papers (2)  |  Patents (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    A selective doping technology has been developed for GaAs that allows layers with multiple doping profiles to be prepared in a single implantation step. In this procedure, qualified GaAs Cr-doped substrates were masked With Si2N4and photoresist levels. The extent of doping in the underlying layer was controlled with the nitride thickness, as Si3N4has a s... View full abstract»

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  • Characterization of positive resist development

    Publication Year: 1981, Page(s):311 - 313
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    The development of positive photoresist is assumed to be a surface limited reaction whose development rate is determined by the local inhibitor concentration M, as defined by Dill et al. This paper describes a technique for determining development rate as a function of inhibitor concentration and demonstrates the usefulness of the technique for quality control. Resist development parameters for th... View full abstract»

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  • MOSFET's in electron-beam recrystallized PolySilicon

    Publication Year: 1981, Page(s):313 - 315
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    MOSFET's have been fabricated in polysilicon films recrystallized by scanned, cw electron-beam heating. The structure of the polysilicon is similar to the large-grain structure formed by cw laser recrystallization, and no significant differences were seen between the characteristics of transistors in material recrystallized by the two different types of heating. View full abstract»

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  • Effects of grain boundaries on laser crystallized poly-Si MOSFET's

    Publication Year: 1981, Page(s):316 - 318
    Cited by:  Papers (19)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Data are reported for n-MOSFET's fabricated in laser crystallized poly-Si on amorphous insulating substrates. The dependence of electrical characteristics on the effective channel length in the range of 100 to 0.3 µm and on channel width from 120 to 20 µm is presented. The electron surface mobility is found to increase as the channel length is reduced, approaching that of devices in sing... View full abstract»

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  • A new configuration of CCD imager with a very low smear level

    Publication Year: 1981, Page(s):319 - 320
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    In this paper a new configuration of CCD image sensor is proposed to improve smear. This new sensor introduces a storage region, with a selective gate and drain section, between the imaging region and a readout register. The configuration and operating principles of the new device are described. Preliminary experimental results with a 402(H) × 502(V) element image sensor are also reported. Th... View full abstract»

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  • [Back cover]

    Publication Year: 1981, Page(s): c4
    Cited by:  Papers (1)
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    Freely Available from IEEE

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Tsu-Jae King Liu
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