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Electron Device Letters, IEEE

Issue 6 • Date June 1981

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1981 , Page(s): c1
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    Freely Available from IEEE
  • Sprayed zinc-cadmium sulfide films for Cu2S/ZnxCd1-xS heterojunction solar cells

    Publication Year: 1981 , Page(s): 137 - 138
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (216 KB)  

    Cu2S/ZnxCd1-xS solar cells with stable open-circuit voltages up to 0.784 V were formed on zinc-cadmium sulfide films deposited by spray pyrolysis. x was varied between zero and 0.7 by varying the spray solution composition. ZnxCd1-xS films formed Schottky diodes with evaporated chromium contacts; depletion layer width (in light) in the films increased with x, from 0.16 to 3.1 microns. Resistivity of the films increased exponentially with x. Optical band gap increased with x from 2.41 eV at x = 0 to 2.82 eV at x = 0.6. View full abstract»

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  • Weak inversion characteristics of the fully depleted SOS MOSFET

    Publication Year: 1981 , Page(s): 139 - 140
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (216 KB)  

    The weak inversion characteristics of fully depleted, edgeless N-channel SOS transistors were studied both experimentally and theoretically. It was found that in some cases the weak inversion characteristic was dominated by minority carrier conduction at silicon-sapphire interface rather than the silicon-oxide interface. For the cases in which the weak inversion conduction was dominated by the silicon-sapphire interface the log IDS-VGSslopes were shallow, leakage currents high, and threshold voltages low. View full abstract»

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  • Design of quasi-grain-boundary-free (QGBF) polycrystalline solar cells

    Publication Year: 1981 , Page(s): 141 - 143
    Cited by:  Papers (1)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (392 KB)  

    A new solar cell structure is proposed which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials of the future, i.e., materials having small grains, including thin film materials. The concept is demonstrated to be technologically achievable. View full abstract»

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  • Threshold voltage margin of normally-off GaAs MESFET in DCFL circuit

    Publication Year: 1981 , Page(s): 144 - 146
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (232 KB)  

    The margin of threshold voltage (VT) for GaAs normally-off MESFET DCFL's was numerically analyzed applying the equivalent inverter circuit model. The results show that the optimum (VT) is 0.3 V. Quantitative relation between the margin and delay time is obtained as a function of (VT). At (VT) = 0.3 V, the margin is 0.28 V with tpdless than 100 ps for 0.5 µm gate length. View full abstract»

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  • GaAs FETs having high output power per unit gate width

    Publication Year: 1981 , Page(s): 147 - 148
    Cited by:  Papers (1)
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    GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed. View full abstract»

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  • Improvements in aluminum-silicon Schottky barriers due to processing with a pulsed ruby laser

    Publication Year: 1981 , Page(s): 149 - 151
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (280 KB)  

    Improvements in Schottky barrier characteristics (increases in barrier heights and reductions in n-values or ideality factors) have been obtained for aluminum-n-type silicon contacts upon irradiation of single (1 msec) pulses from a ruby laser (λ = 0.694 µm). Increases in φbof up to 0.2 volts and decreases in n by a factor of ≃ 2 have been observed for optical pulse energies in the range of 25-40 J cm-2. View full abstract»

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  • GaAs MESFET fabrication using maskless ion implantation

    Publication Year: 1981 , Page(s): 152 - 154
    Cited by:  Papers (1)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (416 KB)  

    A 2000-Å-diameter focused-ion beam from a Au-Si liquid-metal-alloy ion source was used to implant the doped regions of GaAs metal-semiconductor gate field-effect transistors. An Al stopping layer on the wafer was used to trap the Au ions. The 140-keV Si++beam component was deflected under computer control to implant 8 × 50 µm active channel regions and 16 × 50 µm contact regions. The devices were metallized using conventional lithography. DC electrical characteristics of the 1.5-µm-gate-length devices are comparable to those of conventionally processed devices of identical geometry. View full abstract»

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  • [Back cover]

    Publication Year: 1981 , Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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