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IEEE Electron Device Letters

Issue 3 • March 1981

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Displaying Results 1 - 7 of 7
  • [Front cover and table of contents]

    Publication Year: 1981, Page(s): c1
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    Freely Available from IEEE
  • A fine line silicon shadow mask for inversion layer solar cells

    Publication Year: 1981, Page(s):61 - 63
    Cited by:  Papers (5)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The feasibility of using silicon shadow masks to delineate fine linewidth grid patterns in MIS - Inversion Layer solar cells has been demonstrated. The masks have been prepared by anisotropically etching V-grooves into one surface of a silicon wafer, while simultaneously thinning the wafer by etching from the back surface. These masks have been used in a simple procedure to fabricate MISIL solar c... View full abstract»

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  • Double-injection diode as a pulse width modulation element

    Publication Year: 1981, Page(s):64 - 66
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    Double-injection switching devices consist of a p+and an n+junction for injecting holes and electrons into the high resistivity semiconductor substrate containing compensated (charged) deep traps. These devices show an S-type switching beyond a certain threshold voltage. One possible use of such DI devices is for pulse width modulation. When the device is pulsed with a voltag... View full abstract»

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  • High cut-off frequency InP MESFET

    Publication Year: 1981, Page(s):67 - 69
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    An InP MESFET with a 0.8 µm gate length has been fabricated utilizing an active layer grown by LPE on an Fe-doped substrate. The dc transconductance was 22 mS/200 µm and the gain-bandwidth product fThad a high value of about 40 GHz. The high value of fTis mainly due to the high saturation velocity in the channel, which was extimated to be 2.8 × 107cm... View full abstract»

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  • Continuously clocked 1 GHz GaAs CCD

    Publication Year: 1981, Page(s):70 - 72
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment. View full abstract»

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  • Inversion-mode insulated gate Ga0.47In0.53As field-effect transistors

    Publication Year: 1981, Page(s):73 - 74
    Cited by:  Papers (12)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (192 KB)

    It is demonstrated that inversion-mode n-channel insulated gate field-effect transistors can be made of p-type heteroepitaxially-grown Ga0.47In0.53As layers on semi-insulating InP. View full abstract»

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  • [Back cover]

    Publication Year: 1981, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Editor-in-Chief

Tsu-Jae King Liu
tking@eecs.berkeley.edu