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Electron Devices, IEEE Transactions on

Issue 8 • Date Aug. 1981

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1981 , Page(s): c1
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    Freely Available from IEEE
  • Introduction

    Publication Year: 1981 , Page(s): 903 - 904
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  • Hot-carrier constraints on transient transport in very small semiconductor devices

    Publication Year: 1981 , Page(s): 905 - 911
    Cited by:  Papers (1)
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    Current technology has progressed rapidly and is pushing toward fabrication of submicron dimensioned devices. As this occurs, we expect that the temporal and spatial scales in these devices will become sufficiently small that the semiclassical approach to transport theory, as expressed by the Boltzmann equation, becomes of questionable validity. In developing a corrected transport equation from quantum kinetic theory, several constraints arise on the normal concepts of transport parameters. The intra-collisional field effect, concomitant nonzero collision duration, and retarded collisional interactions have pronounced effects upon the carrier transport, especially in the transient dynamic response region in small devices. The description of diffusion is also complicated by the relatively long duration of the velocity auto-correlation function. Calculations have been carried out for the velocity autocorrelation function for Si. It is found that the autocorrelation \phi'(t) initially relaxes exponentially, due to momentum relaxation, goes negative and displays a local minimum, then relaxes to zero at a slower rate due to energy relaxation. This complicated behavior leads to enhanced diffusion and noise on the short-time scale. View full abstract»

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  • Mesostructure electronics

    Publication Year: 1981 , Page(s): 911 - 914
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    Control of composition during the growth of compound semiconductors, especially by molecular beam epitaxy (MBE), makes possible the fabrication of heterostructures with composition varying on a space scale of order ten to one hundred lattice constants. These have distinctive physical properties with possibilities of device applications. This paper considers some structures consisting of parallel layers, and discusses eleclctronic phenomena involving conduction parallel to the layers and polarization normal to them. View full abstract»

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  • Monte Carlo estimation of hot carrier noise at millimeter- and submillimeter-wave frequencies

    Publication Year: 1981 , Page(s): 914 - 923
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1104 KB)  

    This paper deals with the use of Monte Carlo experiments for investigating noise phenomena associated with hot carrier transport in semiconductors. In the first part of the paper procedures and problems associated with the design and interpretation of such experiments are discussed. The use of a Monte Carlo experiment is then demonstrated by estimating the velocity fluctuation spectrum of electrons in GaAs. Significant new results and insights are obtained. In particular, two new Spectral peaks are discovered and explained in terms of underlying physical processes, certain simple intuitive assumptions often made in noise theory are shown to be unjustified, and a criterion for the minimum flight time needed for estimates of "conventional" diffusion coefficients is obtained. View full abstract»

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  • Effect of long-term stress on IGFET degradations due to hot electron trapping

    Publication Year: 1981 , Page(s): 923 - 928
    Cited by:  Papers (33)
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    The threshold voltage shift through the long-term stress is measured for IGFET's. The gate bias dependence shows that the hot electron trapping is affected strongly by the electric field in the gate insulator. The threshold voltage shift versus time is well explained with the theory modified by the effect of the trapped charge on the subsequent electron trapping. The effect of transistor dimensions and temperature are also discussed. View full abstract»

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  • Emission probability of hot electrons for highly doped silicon-on-sapphire IGFET

    Publication Year: 1981 , Page(s): 928 - 936
    Cited by:  Papers (1)
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    Experimental measurements of the probability of emission of hot electrons into the oxide of silicon-on-sapphire (SOS) MOS devices are presented for high doping levels. The experimental method is derived from the optically induced hot electron experiment as proposed by Ning. The dependence of the emission probability on device parameters and applied voltage is analyzed emphasizing the lucky electron model and the sensitivity of the model to device characterization. We found that the expression P = P'_{0} \exp (-d/\lambda _{eff}) describes the experimental data very well, taking P'_{0} = 0.5 and \lambda _{eff} = 95 Å. It shows that hot carrier properties of SOS are the same as those of bulk silicon. The results also show that hot electron related instabilities can arise for bias voltages lower than 2 V when the doping level reaches 1 × 1018At/cm3. View full abstract»

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  • Ballistic electron transport in semiconductors

    Publication Year: 1981 , Page(s): 937 - 940
    Cited by:  Papers (16)
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    The possibility of ballistic transport in semiconductors is discussed and criteria are given for the experimental verification of ballistic behavior. The potential of purely ballistic motion, velocity overshoot, and inhomogeneities of the free carrier concentration in the space charge limited regime for device performance is assessed. View full abstract»

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  • Importance of boundary conditions to conduction in short samples

    Publication Year: 1981 , Page(s): 941 - 944
    Cited by:  Papers (8)
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    The effects of boundary conditions on conduction in short samples are calculated numerically for nonballistic and ballistic cases. For the nonballistic case, the resistivity is substantially below the bulk value due to spillover from N+contacts even for samples which are several Debye lengths long. In the ballistic case, it is found that changing the boundary conditions strongly affects both the magnitude of the current and its dependence on voltage. View full abstract»

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  • Instabilities of inertial transport in semiconductors

    Publication Year: 1981 , Page(s): 945 - 950
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    A derivation of the potential and the current-voltage relation is given for collisionless (inertial) transport of electron carriers in high-mobility low effective-mass one-dimensional short space-charge limited semiconductor diodes. No instability for longitudinal fluctuations is found, but transverse spatial instabilities or current filament formation is predicted by minimum entropy production. The negative differential resistance that gives rise to the transverse spatial instabilities restricts the range of stable device operation where a minimum current density is found. View full abstract»

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  • Diffusion effects and "Ballistic transport"

    Publication Year: 1981 , Page(s): 951 - 953
    Cited by:  Papers (10)
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    The effects of both collisional drag and diffusion effects on the operation of GaAs n+-n-n+structures are determined using a momentum transport equation which includes velocity fluctuation effects. It is shown that diffusion effects are important in practical structures, and that previous interpretations of experimental results which claim to show "ballistic" transport can be seriously in error. The general limitations of single-particle transport models when used to try to understand the results of experiments, such as diode characteristic measurements which yield only ensemble averages, are discussed. View full abstract»

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  • A temperature model for the GaAs MESFET

    Publication Year: 1981 , Page(s): 954 - 962
    Cited by:  Papers (49)
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    This paper describes a new two-dimensional method for study of GaAs Schottky-barrier MESFET's. A modified form of the conduction current is used in which transport properties are described in terms of electron temperature rather than electric field. Nonequilibrium velocity effects such as velocity overshoot are included. Results for the one-dimensional GaAs diode and the two-dimensional GaAs MESFET are presented and compared to other studies that utilize the Monte Carlo procedure. Larger values of current cut-off frequency are predicted for submicrometer gate length MESFET's than in previous two-dimensional simulations which utilize the steady-state transport properties. View full abstract»

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  • Power-limiting breakdown effects in GaAs MESFET's

    Publication Year: 1981 , Page(s): 962 - 970
    Cited by:  Papers (66)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (928 KB)  

    State-of-the-art GaAs MESFET'S exhibit an output power saturation as the input power is increased. Experiments indicated that this power saturation is due to the combined effects of forward gate conduction and reverse gate-to-drain breakdown. This reverse breakdown was studied in detail by performing two-dimensional numerical simulations of planar and recessed-gate FET's. These simulations demonstrated that the breakdown occurs at the drain-side edge of the gate. The results of the numerical simulations suggested a model of the depletion layer configuration which could be solved analytically. This model demonstrated that the breakdown voltage was inversely proportional to the product of the doping level and the active layer thickness. View full abstract»

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  • Output characteristics of short-channel field-effect transistors

    Publication Year: 1981 , Page(s): 971 - 976
    Cited by:  Papers (15)
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    A recent model for hot-electron MOS transistors [4], [5] is generalized for short-channel field-effect transistors. It is based on six to seven parameters for the carrier mobility under the influence of transverse and Iongitudinal electric fields, for the threshold voltage and its dependence on drain bias, and for a finite longitudinal field at pinch-off. Such important features of short-channel FET's like reduced available current and voltage gain are well represented, where the latter turns up as important limiting factor in submicron devices. Effects of zero-field mobility, impurities, and device geometry are stated explicitly. The results are confirmed by measured data on 0.9-µm silicon gate MOSFET's. View full abstract»

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  • Physics of short-gate GaAs MESFET's from hydrostatic pressure studies

    Publication Year: 1981 , Page(s): 977 - 983
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    The use of hydrostatic pressure to study the physics of a GaAs MESFET is reported for the first time. Two aspects of the physics of conventional 1-µm gate structures are focused upon: 1) the possible role played by hot-electron effects in the drain-current saturation and 2) the physical mechanism responsible for excess current. The pressure dependence of the low-field conductance, current-voltage characteristics, and VHF noise properties of the MESFET are examined and compared to those of a Gunn diode. The results show that hot-electron effects are similar in the two devices, thereby providing new evidence that current saturation is associated with Gunn domain formation. The results also suggest that the excess current at large gate voltages is due to electron injection into the substrate under the source side of the gate, rather than to other proposed mechanisms. View full abstract»

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  • Correction to "Static induction transistor image sensors"

    Publication Year: 1981 , Page(s): 983
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  • [Back cover]

    Publication Year: 1981 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego